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3rd International Conference on Energy systems, Drives and Automations, ESDA 2020

作者： Agnihotri, Suneet Kumar Prashant, D.V. Samajdar, Dip Prakash Nanoscale Device Circuit and System Design Lab Electronics and Communication Engineering Discipline PDPM-Indian Institute of Information Technology Jabalpur482005 India

ISBN: (纸本)9789811672736

The use of nanostructures over traditional bulk and thin film solar cells increases the absorption of light due to the coupled effects of intrinsic antireflection and strong excitation of resonance modes. Therefore, to increase the absorption over the wavelength of 300 to 1600 nm, InP nanowires (NWs) are grown on Ge substrates to design tandem solar cells, which particularly broaden the absorbed solar spectrum. In this article, we have performed the optical simulation and optimized the dimensions of the InP NWs such as period, diameter, and height of the InP NW and thickness of Ge substrate for current matching between the two sub cells using the FDTD simulation software. The performance parameters such as Photogeneration rate, Electric-field, and absorption power are compared by considering different simulation regions of InP NWs only, Ge substrate only, and combination of InP NW and Ge substrate. © 2022, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.

关键词： Nanowires

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Camera-based climbing analysis for a therapeutic training system

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Current Directions in Biomedical Engineering 2020年第2期6卷

作者： Richter, Julia Beltrán, Raul Beltrán Heinkel, Ulrich Circuit and System Design Chemnitz University of Technology Chemnitz Germany

In view of therapeutic applications, climbing motion analysis has gained increased importance to avoid movements that are prone to cause injuries and to motivate the climber by means of gamification. To date, there remains need to investigate analysis methods for feedback generation that do not require body contact and that can be easily integrated in the climbing setup. Therefore, this study proposes an camera-based approach for contact-less motion analysis that localises the climber's centre of mass (COM) and derives relevant parameters, such as fluency, force and distance to the wall, from the temporal COM analysis. © 2020 Julia Richter et al., published by De Gruyter, Berlin/Boston 2020.

关键词： Computer vision

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ZnSe/NiO heterostructure-based chemiresistive-type sensors for low-concentration NO_(2) detection

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Rare Metals 2021年第6期40卷 1632-1641页

作者： Wei Liu Ding Gu Jian-Wei Zhang Xiao-Gan Li Marina N.Rumyantseva Alexander M.Gaskov School of Microelectronics Key Laboratory of Liaoning for Integrated Circuits TechnologyDalian University of TechnologyDalian 116024China Liaoning Key Laboratory of Integrated Circuit and Biomedical Electronic System Faculty of Electronic Information and Electrical EngineeringDalian University of TechnologyDalian 116024China Laboratory of Chemistry and Physics of Semiconductor and Sensor Materials Chemistry DepartmentMoscow State UniversityMoscow 199991Russia

Novel ZnSe/NiO heterostructure nanocomposites were successfully prepared by one-step hydrothermal *** ZnSe/NiO-based sensor exhibits a response of~96.47% to 8×10^(-6) NO_(2) at 140℃,which is significantly higher than those of intrinsic ZnSe-based(no response)and NiO-based(~19.65%)*** theoretical detection limit(LOD)of the sensor is calculated to be 8.91×10^(-9),indicating that the sensor can be applied to detect the ultralow concentrations of NO_(2).The effect of NiO content on the gas-sensing performance of the nanocomposites was investigated in *** optimal NiO content in the nanocomposite is determined to be15.16%to achieve the highest *** as-fabricated sensor also presents an excellent selectivity to several possible interferents such as methanol,ethanol,acetone,benzene,ammonia and *** enhanced sensing performance can be attributed to the formation of p-p heterostructures between ZnSe and NiO,which induces the charge transfer across the interfaces and yields more active sites.

关键词： ZnSe/NiO heterostructure NO_(2)detection Gas sensors Charge transfer

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Analysis of a Transistor Count Optimized Charge Pump for Telecommunication Application

Analysis of a Transistor Count Optimized Charge Pump for Tel...

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2021 Zooming Innovation in Consumer Technologies Conference, ZINC 2021

作者： Das, Payali Majumder, Alak Indian Institute of Technology Delhi Department of Electrical Engineering 110016 India National Institute of Technology Integrated Circuit System Lab Department of Ece Arunachal Pradesh 791112 India

ISBN: (纸本)9781665404174

The progress in the design of a charge pump (CP) circuit has noted some vital non-idealities such as current mismatch, phase noise and reference spur. Also, lock-in time is considered as one of the most important attributes for which a high-performance CP design always remains as an open challenge for potential application in high-speed mobile communication. This article explores an Operational Amplifier (Op-amp) based optimal gate count CP designed for 90nm CMOS using CADENCE Virtuoso platform at a supply voltage of 1.2Volt to burn as small as 226uW of power. The measured phase noise and reference spur are-117.3 dBc/Hz and-113.8 dBc/Hz at an offset frequency of 10MHz. The reported locking time of 9.15ns only with a current mismatch of 0.22% makes it competent enough for PLL driven communication modules. © 2021 IEEE.

关键词： Phase locked loops

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A Design Methodology for Communication Infrastructures on Partially Reconfigurable FPGAs

A Design Methodology for Communication Infrastructures on Pa...

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International Conference on Field Programmable Logic and Applications

作者： Jens Hagemeyer Boris Kettelhoit Markus Koester Mario Porrmann System and Circuit Technology University of Paderborn Germany

The ability of partial reconfiguration of today's FPGAs allows the exchange of dynamic system components at runtime, which enables the realization of self-reconfigurable systems. To ease the design of a partially reconfigurable system this paper presents an integrated design flow for reconfigurable architectures. The design flow includes tools for system partitioning, floorplanning, and automatic generation of configuration data for the static and the dynamic system components. Furthermore, the design flow comprises the implementation of a homogeneous on-chip communication infrastructure, which is used to interconnect the dynamic system components placed at run-time. For the design of such an on-chip communication infrastructure a layer model is introduced, which divides the communication into five different layers of abstraction. As an example a communication infrastructure is realized on a Xilinx Virtex-2 FPGA based on the Wishbone protocol. A tristate-based and a slice-based implementation are presented and analyzed with respect to efficiency.

关键词： Design methodology Field programmable gate arrays Tiles Reconfigurable architectures Runtime Protocols system-on-a-chip Integrated circuit technology Integrated circuit interconnections Guidelines

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245 GHz subharmonic receivers in SiGe

245 GHz subharmonic receivers in SiGe

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IEEE Radio Frequency Integrated circuits Symposium

作者： Yanfei Mao K. Schmalz J. Borngraber J. C. Scheytt C. Meliani IHP System & Circuit Technology University Paderborn

ISBN: (纸本)9781467360593

Two subharmonic receivers for 245 GHz sprectroscopy sensor applications in the 245 GHz ISM band have been proposed. One receiver consists of an 2nd APDP (antiparallel diode pair) passive SHM (subharmonic mixer), a 120 GHz push-push VCO with 1/64 divider, and a 120 GHz PA (power amplifier). The other consists of a single-ended four-stage CB (common base) LNA, an 2nd APDP passive SHM, an IF amplifier, a 120 GHz push-push VCO with 1/64 divider, and a 120 GHz PA. The receivers are fabricated in a SiGe:C BiCMOS technology with f_T/f_(max)=300/500 GHz. The measured conversion gain are -17 dB rsp. 10.6 dB at 245 GHz with 3-dB bandwidths of 13 GHz rsp. 14 GHz, and the single-side band noise figure are 17 dB rsp. 20 dB;the two receivers dissipates a power of 213 mW and 312 mW, respectively.

关键词： 245 GHz APDP VCO Subharmonic receivers

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Unlocking phonon dynamics at interfaces: Angle-resolved transmission, mode conversion, and thermal conductance engineering

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International Journal of Heat and Mass Transfer 2025年 250卷

作者： Quanjie Wang Cheng Shao Yucheng Xiong Shouhang Li Renzong Wang Jianshi Sun Yifan Liu Xiangjun Liu School of Mechanical Engineering Shandong Key Laboratory of CNC Machine Tool Functional Components Qilu University of Technology (Shandong Academy of Sciences) Jinan PR China Institute of Micro/Nano Electromechanical System and Integrated Circuit College of Mechanical Engineering State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Donghua University Shanghai PR China Thermal Science Research Center Shandong Institute of Advanced Technology Jinan PR China Institute of Micro/Nano Electromechanical System and Integrated Circuit College of Mechanical Engineering Donghua University Shanghai PR China Centre de Nanosciences et de Nanotechnologies CNRS Université Paris-Saclay 91120 Palaiseau France

Thermal transport across material interfaces is a critical factor in the thermal management and overall performance of integrated circuits (ICs). We investigate the angle- and mode-dependent phonon transmission across GaN/AlN interfaces, examining both smooth and rough morphologies. For smooth interface, phonon transmission is strongly influenced by the incident angle, with a critical angle (∼44.4°) limiting transverse mode transmission. Notably, longitudinal acoustic (LA) phonons exhibit anomalous behavior at high incident angles due to mode conversion, forming hybrid modes via coupling with optical phonons. At rough interface, diffuse scattering significantly alters transmission characteristics, enabling additional transport channels and enhancing transverse mode transmission. Frequency-dependent effects reveal a transition to complete diffuse scattering, with energy redistribution across acoustic and optical modes, highlighting acoustic-to-optical conversion. Our decomposition of transmission coefficients quantifies mode-specific contributions, revealing that mode conversion enhances the interfacial thermal conductance (ITC) by ∼10 %. Additionally, we quantify the interface specularity parameter, identifying polarization- and wavelength-dependent deviations from the Ziman model. These findings provide insight into optimizing ITC through interface engineering and phonon dynamics.

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Evaluation of applied intra-disk redundancy schemes to improve single disk reliability

Evaluation of applied intra-disk redundancy schemes to impro...

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IEEE Annual International Symposium on Modeling, Analysis and Simulation of Computer and Telecommunication systems

作者： Grawinkel, Matthias Schäfer, Thorsten Brinkmann, André Hagemeyer, Jens Porrmann, Mario Paderborn Center for Parallel Computing PC2 University of Paderborn Germany Heinz Nixdorf Institute System and Circuit Technology University of Paderborn Germany

ISBN: (纸本)9780769544304

Exponentially growing capacities of disk drives have increased the problem that not only a complete disk can fail, but also individual, small groups of sectors can be erroneous. These sector errors are especially critical during RAID rebuilds because they can only be detected when the corresponding sectors are read. Mechanisms to cope with sector errors, therefore, have become an important way to improve disk reliability. One approach to deal with sector errors is the introduction of intra-disk redundancy, where additional redundancy blocks are calculated and stored for each set of disk sectors. Previous studies have introduced intra-disk redundancy schemes and have evaluated their impact on disk reliability. None of these studies has evaluated the influence on disk drive performance or the underlying energy consumption. The study presented in this paper benchmarks existing schemes concerning these metrics. It shows the surprising result that weaker codes combined with newly introduced scrambling techniques can produce faster layouts with similar reliability properties than previously proposed strong codes. © 2011 IEEE.

关键词： Energy utilization

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SUBHDIP: Process variations tolerant subthreshold Darlington pair-based NBTI sensor circuit

SUBHDIP: Process variations tolerant subthreshold Darlington...

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作者： Shah, Ambika Prasad Yadav, Nandakishor Beohar, Ankur Vishvakarma, Santosh K. Nanoscale Devices VLSI Circuit and System Design Laboratory Discipline of Electrical Engineering Indian Institute of Technology Indore Madhya Pradesh453-552 India

Aggressive technology scaling has inevitably led to reliability becomes a major concern for modern high-speed and high-performance integrated circuits. The major reliability concerns in nanoscale very-large-scale integration design are the time-dependent negative bias temperature instability (NBTI) degradation. Owing to increasing vertical oxide field and higher operating temperature, the threshold voltage of P-channel MOS transistors increases with time under NBTI. This study presents a novel subthreshold Darlington pair-based NBTI degradation sensor under the stress conditions. The proposed sensor provides the high degree of linearity and sensitivity under subthreshold conditions. The Darlington pair used in the circuit provides the stability and the high-input impedance of the circuit makes it less affected by the process variations. Owing to high sensitivity, the proposed sensor is best suited for sensing of temperature variation, process variation, and temporal degradation during measurement. The sensitivity of the proposed sensor at room temperature is 0.239mV/nA under subthreshold conditions. The proposed sensor is less affected by the process variation and has the maximum deviation of 0.0011mV at standby leakage current of 30nA. © 2019 Institution of Engineering and technology. All rights reserved.

关键词： Negative bias temperature instability

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An inexact alternating proximal gradient algorithm for nonnegative CP tensor decomposition

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Science China(Technological Sciences) 2021年第9期64卷 1893-1906页

作者： WANG DeQing CONG FengYu School of Biomedical Engineering Faculty of Electronic Information and Electrical EngineeringDalian University of TechnologyDalian 116024China Faculty of Information Technology University of JyväskyläJyväskylä40100Finland School of Artificial Intelligence Faculty of Electronic Information and Electrical EngineeringDalian University of TechnologyDalian 116024China Key Laboratory of Integrated Circuit and Biomedical Electronic System Liaoning ProvinceDalian University of TechnologyDalian 116024China

Nonnegative tensor decomposition has become increasingly important for multiway data analysis in recent years. The alternating proximal gradient(APG) is a popular optimization method for nonnegative tensor decomposition in the block coordinate descent framework. In this study, we propose an inexact version of the APG algorithm for nonnegative CANDECOMP/PARAFAC decomposition, wherein each factor matrix is updated by only finite inner iterations. We also propose a parameter warm-start method that can avoid the frequent parameter resetting of conventional APG methods and improve convergence *** experimental tests, we find that when the number of inner iterations is limited to around 10 to 20, the convergence speed is accelerated significantly without losing its low relative error. We evaluate our method on both synthetic and real-world *** results demonstrate that the proposed inexact APG algorithm exhibits outstanding performance on both convergence speed and computational precision compared with existing popular algorithms.

关键词： tensor decomposition nonnegative CANDECOMP/PARAFAC block coordinate descent alternating proximal gradient inexact scheme

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