检索结果-内蒙古大学图书馆

The 5th International Symposium on Electromagnetic Compatibility

作者： Qingyong Lü Xin Li Luhong Xiong Fanqi Zeng Circuit and system in Fuzhou University Nanjing University of Information Science& Technology mechanical and electrical in Hunan University

ISBN: (纸本)9781509051861;9781509051854

On-line detection of leakage current of Zinc oxide power supply SPD can be affected by many factors,such as harmonic voltage,inter-phase interference,*** factors mutually affect each other,making the problem quite *** to eliminate the influence of inter-phase interference and voltage harmonic wave of system on MOV leakage current detection and thus improve the accuracy of results has always been the focus of *** this paper,we detected the phase difference between working voltage and total leakage current instead of detecting resistive leakage *** addition,data fusion method that combined arithmetic mean and batch estimate was used to process on-line detection data of *** using this method,the results can more accurately reflect the degradation of MOV.

关键词： inter-phase interference harmonic wave data fusion phase difference

来源：评论

学校读者我要写书评

暂无评论

Closed-Loop Approach on Formal Specification for Semiconductor Test

Closed-Loop Approach on Formal Specification for Semiconduct...

引用

MikrosystemTechnik Kongress 2021: Mikroelektronik, Mikrosystemtechnik und ihre Anwendungen - Innovative Produkte fur zukunftsfahige Markte - MikrosystemTechnik Congress 2021: Microelectronics, Microsystems Engineering and their Applications - Innovative Products for Future-Oriented Markets

作者： Schott, C. Mayer, F. Billich, E. Yazdani, S. Sauppe, M. Wolz, W. Heinkel, U. Chemnitz University of Technology Faculty Electrical Engineering and Information Technology Professorship of Circuit and System Design Chemnitz Germany

ISBN: (纸本)9783800756575

Test specifications are commonly written in an informal format, thus leading to ambiguities and misconceptions during their manual transformation to executable test programs. Increasing complexity of semiconductors and the need for reduced test time require novel methodologies in design, verification and test. In this paper, we propose a workflow tool called SpecScribe that targets a semi-automated approach for formal test specification, interfacing of Automatic Test Equipment (ATE) and handling of test results. Our tool provides models covering information about the Device Under Test (DUT), the test setup as well as the tests and the according test flow. Links and references between the specification items and different steps during the test workflow enable validation and verification of the specification on multiple abstraction levels. With the ability to directly target ATE for test setup and a result back-annotation to the specification, a closed loop approach for test development can be achieved. The proposal was evaluated using an in-house developed ASIC and showed the potential of our solution. However, enhancements by incorporating test program generation capabilities are parts of future research. © VDE VERLAG GMBH · Berlin · Offenbach

关键词： Formal specification

来源：评论

学校读者我要写书评

暂无评论

Effects of Drain Doping Profile and Gate Structure on Ambipolar Current of TFET 3

Effects of Drain Doping Profile and Gate Structure on Ambipo...

引用

3rd IEEE International Conference on Electronics technology, ICET 2020

作者： Li, Jie Xie, Qian Huang, Anpeng Wang, Zheng University of Electronic Science and Technology of China Smart Integrated Circuit and System Laboratory Chengdu China

ISBN: (纸本)9781728162836

In this paper, the effects of drain doping profile and gate structure on ambipolar behavior of tunnel field effect transistor (TFET) are investigated. The Gaussian doping drain region TFET (GD TFET) ambipolar current is lower than abrupt junction doping TFET. The influence of gate structure, oxide thickness (tox) and channel thickness (tsi) on the ambipolar current of GD TFET are studied by TCAD simulation. Compared with traditional TFET, GD TFET requires longer gate-on-drain overlap length (Lgd) to suppress ambipolar current, and it will be affected by tox and tsi. With the increase of gate underlap drain length (Lug), the ambipolar current of GD TFET decreases regardless of device parameters, which effectively suppresses the ambipolar behavior of TFET. When the Lug is 10 nm, the ambipolar current of GD TFET decreases from 10-9A/μm of traditional TFET to 10-16A/μm, and the subthreshold swing remains invariable in the on-state. © 2020 IEEE.

关键词： Tunnel field effect transistors

来源：评论

学校读者我要写书评

暂无评论

A Novel Stepped Doping Substrate Structure to Improve the Response of THz CMOS Detector 4

A Novel Stepped Doping Substrate Structure to Improve the Re...

引用

4th IEEE International Conference on Electronics technology, ICET 2021

作者： Chang, Jiexing Xie, Qian Wang, Zheng University of Electronic Science and Technology of China Smart Integrated Circuit and System Laboratory Chengdu China

ISBN: (纸本)9781728176734

In this paper, a novel stepped doping substrate structure is proposed for THz CMOS detector to improve the response. The stepped doping substrate employs a parasitism-reduction region to suppress the leaking current by decreasing the parasitic capacitance between the drain and the substrate and a plasma-wave transiting region to ensure the sensitive response of the channel potential to the THz signal. The operation mechanism of proposed structure has been investigated and the effects of related parameters have been discussed. The TCAD simulation results show that the parasitic capacitance of the novel structure can be decreased by more than 400% compared to the traditional NPN detector structure and the response of the detector can be improved by approximately 80% at 300 GHz. © 2021 IEEE.

关键词： CMOS integrated circuits

来源：评论

学校读者我要写书评

暂无评论

Statistical moment estimation of delay and power in circuit simulation

Statistical moment estimation of delay and power in circuit ...

引用

作者： Nigam, Ashish Tang, Qin Zjajo, Amir Berkelaar, Michel Van Der Meijs, Nick Circuit and System Group Delft University of Technology Mekelweg 4 2628 CD Delft Netherlands

Monte Carlo methods and simulation are often used to estimate the mean, variance, and higher order statistical moments of circuit properties like delay and power. The main issues with Monte Carlo methods are the required long run time and the need for prior detailed knowledge of the distribution of the variations. Additionally, most of available circuit simulation tools can run Monte Carlo analysis for Gaussian, lognormal and uniform distribution only. In this paper, in order to estimate these statistical moments, we propose a new method based on a uniform sampling technique and a weighted sample estimator. The proposed method needs significantly fewer simulation runs, and does not need detailed prior knowledge of the variation distributions. Furthermore, it can be used for any type of probability distribution irrespective of the circuit simulation tool used for the analysis. The results obtained show that the proposed method needs lOOx fewer simulations iterations than Monte Carlo runs for accurate moments estimation of delay and power for standard cells in 45 nm and 32 nm technologies. Copyright © 2010 American Scientific Publishers All rights reserved.

关键词： circuit simulation

来源：评论

学校读者我要写书评

暂无评论

Analyses of piezoresistive and mechanical characteristics of nano polysilicon film

Analyses of piezoresistive and mechanical characteristics of...

引用

International Conference on Software Intelligence Technologies and Applications and International Conference on Frontiers of Internet of Things, 2014

作者： Lu, Xuebin Cui, Linhai Huang, Hai Dept. of Integrate Circuit Design and Integrate System Harbin University of Science and Technology China

ISBN: (纸本)9781849199704

In order to take good advantage of nano polysilicon film, piezoresistive and mechanical characteristics of the nano polysilicon film are very necessary to investigated. In this paper, the nano polysilicon films were prepared by low pressure chemical vapour deposition under different technical parameters, including thickness, deposition temperature and doping concentration, which are very important for preparation of the nanofilm. The experimental results of piezoresistive and temperature characteristics show that the optimized technical parameters are followed, the thickness is about 90nm, the deposition temperature is 620, and the doping concentration is about 4.1×1019cm-3 or between 2.0×1020cm-3 and 4.1×1020cm-3 from different point of view. The experimental results of Young's modulus show that the mechanical characteristic of nano polysilicon film is almost independent of thickness. The piezoresistive performance of nano polysilicon film is better than that of single silicon under same doping concentration. The investigation of piezoresistive and mechanical characteristics of the nano polysilicon film is very useful for application of piezoresistive sensor, which can be used in the internet of things.

关键词： Elastic moduli

来源：评论

学校读者我要写书评

暂无评论

A boostless write optimised single ended robust 7T SRAM cell for ultra-low power memory design

引用

International Journal of Electronics Letters 2017年第1期5卷 13-25页

作者： Kushwah, C.B. Vishvakarma, S.K. Dwivedi, D. Nanoscale Devices VLSI Circuit and System Design Lab Electrical Engineering IIT Indore MP India System Technology Group IBM Bangalore KA India

A boostless 7T static random access memory SRAM cell with high writability, improved stability and reduced read failure is proposed. The proposed 7T utilises feedback cutting during write operation, which does not require a boosted supply for single access transistor. This technique enhances the writability of the SRAM cell at ultra-low voltage (ULV) supply without any write assist at 90 and 20 nm technology nodes. The proposed 7T SRAM cell has write trip point (WTP) at 85.25 mV, whereas 5T fails to write ‘1’. The mean to sigma ratio (µ/σ) is improved by a factor of 1.08× and 7.14× for hold static noise margin (HSNM) and read margin, respectively, as compared to standard 5T at 300 mV in UMC 90 nm process technology. This also saves 26.41% read and 22.72% write power as compared to 5T SRAM cell at 300 mV. Moreover 7T also shows an improvement of 2.91% in HSNM and 1.85% in read margin by using FinFET technology. © 2015 Informa UK Limited, trading as Taylor & Francis Group.

关键词： Boostless single ended SRAM ultra-low power

来源：评论

学校读者我要写书评

暂无评论

Optimized technical characteristics of polysilicon nanofilm

Optimized technical characteristics of polysilicon nanofilm

引用

2014 International Conference on Electronic Engineering and Information Science, ICEEIS 2014

作者： Lu, Xue Bin Cui, Lin Hai Ren, Ming Yuan Department of Integrate Circuit Design and Integrate System Harbin University of Science and Technology Harbin 150080 China

ISBN: (纸本)9783038351467

In order to take good advantage of polysilicon nanofilm, optimized technical characteristics of the polysilicon nanofilm are very necessary to investigated. In this paper, the polysilicon nanofilms were prepared under different technical parameters, including thickness and doping concentration, which are very important for preparation of the nanofilm. The experimental results of piezoresistive and temperature characteristics show that the optimized technical characteristics are followed, the thickness is about 90nm, and the doping concentration is about 4.1×1019cm-3 or between 2.0×1020cm-3 and 4.1×1020cm-3 from different point of view. The investigations of optimized technical characteristics are very useful for application of the polysilicon nanofilm to piezoresistive sensor. © (2014) Trans Tech Publications, Switzerland.

关键词： Polycrystalline materials

来源：评论

学校读者我要写书评

暂无评论

An HSR Data Model for Cyborg Insect Research Experiments

引用

Chinese Journal of Electronics 2018年第4期27卷 680-686页

作者： HONG Hui WANG Xiaoyu ZHU Zhengfei MA Qian GUAN Nan ZHENG Nenggan Key Laboratory of Radio Frequency Circuit and System Hangzhou Dianzi University Qiushi Academy for Advanced Studies Zhejiang University College of Computer Science and Technology Zhejiang University Department of Computing Hong Kong Polytechnic University

Research on cyborg intelligent insects requires the experiment platform to collect data from the distributed sensing models and process the multi-modal signals in real-time. To overcome these issues, we present a novel data model, naming as the Hybrid-synchronizedrealtime(HSR) data model, which can synchronize the hybrid raw data channels by a meta data integration method and process them with a fixed priority scheduling algorithm. Real animal experiments show that the insect-machine experiment platform based on the HSR data model can fully satisfy the requirements of cyborg intelligent insect research, especially in dealing with the technical challenges of data synchronization, real-time processing and hybrid data integration. It provides an efficient approach to implement the experiment platform and thus aid the frontier research on cyborg insects.

关键词： Cyborg intelligent insects Data model Hybrid-synchronized-realtime(HSR)

来源：评论

学校读者我要写书评

暂无评论

A Bluetooth scatternet for the Khepera robot

A Bluetooth scatternet for the Khepera robot

引用

4th International Symposium on Autonomous Minirobots for Research and Edutainment, AMiRE 2007

作者： Du, Jia Lei Witkowski, Ulf Rückert, Ulrich System and Circuit Technology Research Group Heinz Nixdorf Institute University of Paderborn 33102 Paderborn Germany

Radio-based communication plays a vital role in multi-robot systems. Bluetooth is an energy-efficient communication technology suited for resource-limited mini-robots such as the Khepera. However, the maximum number of nodes in a Bluetooth piconet is limited, while scatternets-networks of piconets-have not been fully specified. In this paper we present a Bluetooth scatternet using Bluetooth communication sticks developed in our research group. In our solution, bridge nodes carrying two of such Bluetooth sticks are used to interconnect piconets. Beside the developed hardware, issues such as routing as well as topology control are addressed. Finally, data rate and latency measurements are presented for the implemented solution.

关键词： Multipurpose robots

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：