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Forecasting Bitcoin Prices Using Deep Learning for Consumer-Centric Industrial Applications

IEEE Transactions on Consumer Electronics 2024年第1期70卷 1351-1358页

作者： Roy, Pradeep Kumar Kumar, Abhinav Singh, Ashish Sangaiah, Arun Kumar Indian Institute of Information Technology Surat Department of Computer Science and Engineering Surat394190 India Motilal Nehru National Institute of Technology Allahabad Department of Computer Science and Engineering Prayagraj211004 India KIIT Deemed to Be University School of Computer Engineering Bhubaneswar751024 India National Yunlin University of Science and Technology International Graduate Institute of AI Douliou64002 Taiwan Lebanese American University Department of Electrical and Computer Engineering Byblos1102-2801 Lebanon

As cryptocurrencies become more popular as investment vehicles, bitcoin draws interest from businesses, consumers, and computer scientists all across the world. Bitcoin is a computer file stored in digital wallet applications where each transaction is secured using strong cryptographic algorithms. It was challenging to forecast the future price of bitcoin due to its nonlinearity and extreme volatility. Several recent classic parametric models have been found with limited accuracy. To address the limitations and fill the existing research gaps, there is a need for a good prediction model which will provide the desired accuracy in the case of uncertainty and dynamism. This research suggested a deep learning-based framework for predicting and forecasting Bitcoin price. The research will be helpful for worldwide consumers and industries to take their decision on whether to invest or not. The research utilizes Yahoo! finance dataset for the period of 01-03-2016 to 26-02-2021 having 1828 samples. The experimental outcomes of the proposed Long Short-Term Memory (LSTM) model outperformed similar deep learning models by securing minimum loss and confirming that it can be used for future price prediction of the cryptocurrencies, which is helpful for the buyer to take their decision. © 1975-2011 IEEE.

关键词： Hidden Markov models

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SFA-Net: A Selective Features Absorption Network for Object Detection in Rainy Weather Conditions

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IEEE Transactions on Neural Networks and Learning Systems 2023年第8期34卷 5122-5132页

作者： Huang, Shih-Chia Hoang, Quoc-Viet Le, Trung-Hieu National Taipei University of Technology Department of Electronic Engineering Taipei10608 Taiwan National Taipei University of Technology International Graduate Program in Electrical Engineering and Computer Science Taipei10608 Taiwan Hung Yen University of Technology and Education Faculty of Information Technology Hungyen 17000 Viet Nam

In recent years, object detection approaches using deep convolutional neural networks (CNNs) have derived major advances in normal images. However, such success is hardly achieved with rainy images due to lack of visibility. Aiming to bridge this gap, in this article, we present a novel selective features absorption network (SFA-Net) to improve the performance of object detection not only in rainy weather conditions but also in favorable weather conditions. SFA-Net accomplishes this objective by utilizing three subnetworks, where the feature selection subnetwork is concatenated with the object detection subnetwork through the feature absorption subnetwork to form a unified model. To promote further advancement in object detection impaired by rain, we propose a large-scale rainy image dataset, named srRain, which contains both synthetic rainy images and real-world rainy images for training and testing purposes. srRain is comprised of 25 900 rainy images depicting diverse driving scenarios in the presence of rain with a total of 181 164 instances interpreting five common object categories. Experimental results display that our SFA-Net reaches the highest mean average precision (mAP) of 77.53% on a normal image set, 62.52% on a synthetic rainy image set, 37.34% on a collected natural rainy image set, and 32.86% on a published real rainy image set, surpassing current state-of-the-art object detectors and the combination of image deraining and object detection models while retaining a high speed. © 2012 IEEE.

关键词： Feature extraction

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A Comprehensive Technique Based on Machine Learning for Device and Circuit Modeling of Gate-All-Around Nanosheet Transistors

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2023年 4卷 181-194页

作者： Butola, Rajat Li, Yiming Kola, Sekhar Reddy National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Communications Engineering the Institute of Biomedical Engineering the Department of Electronics and Electrical Engineering the Institute of Pioneer Semiconductor Innovation and the Institute of Artificial Intelligence Innovation Hsinchu300093 Taiwan

Machine learning (ML) is poised to play an important part in advancing the predicting capability in semiconductor device compact modeling domain. One major advantage of ML-based compact modeling is its ability to capture complex relationships and patterns in large datasets. Therefore, in this paper a novel design scheme based on dynamically adaptive neural network (DANN) is proposed to develop fast and accurate compact model (CM). This framework constitutes a powerful yet computationally efficient methodology and exhibits emergent dynamic behaviors. This paper demonstrates that the compact model based on ML can be designed to replicate the performance of conventional compact model for nanodevices. For this work, gate-all-around (GAA) nanosheet (NS) device characteristics are comprehensively analyzed for process variability sources using the proposed model. The device geometry parameters such as channel length, nanosheet width and nanosheet thickness are fed as input features to the DANN model. The adaptive neural network learns dynamically by updating weights of the model in accordance with the input features and achieves accurate neural weight convergence. The proposed model predicted the electrical characteristics of NS devices with less than 1% error rate. The model is also implemented and validated for the simulations of digital circuit designs such as inverter, and logic gates. ©;2023 The Authors.

关键词： Circuit simulation

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Retinal Blood Vessel Tracking and Diameter Estimation via Gaussian Process With Rider Optimization Algorithm

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IEEE Journal of Biomedical and Health Informatics 2024年第3期28卷 1173-1184页

作者： Ahmad, Nehal Lai, Kuan-Ting Tanveer, M. Indian Institute of Technology Indore Simrol Department of Mathematics Indore453552 India National Taipei University of Technology Department of International Program of Electrical Engineering and Computer Science Taipei106 Taiwan National Taipei University of Technology Department of Electronic Engineering Taipei106 Taiwan

Retinal blood vessels structure analysis is an important step in the detection of ocular diseases such as diabetic retinopathy and retinopathy of prematurity. Accurate tracking and estimation of retinal blood vessels in terms of their diameter remains a major challenge in retinal structure analysis. In this research, we develop a rider-based Gaussian approach for accurate tracking and diameter estimation of retinal blood vessels. The diameter and curvature of the blood vessel are assumed as the Gaussian processes. The features are determined for training the Gaussian process using Radon transform. The kernel hyperparameter of Gaussian processes is optimized using Rider Optimization Algorithm for evaluating the direction of the vessel. Multiple Gaussian processes are used for detecting the bifurcations and the difference in the prediction direction is quantified. The performance of the proposed Rider-based Gaussian process is evaluated with mean and standard deviation. Our method achieved high performance with the standard deviation of 0.2499 and mean average of 0.0147, which outperformed the state-of-the-art method by 6.32%. Although the proposed model outperformed the state-of-the-art method in normal blood vessels, in future research, one can include tortuous blood vessels of different retinopathy patients, which would be more challenging due to large angle variations. We used Rider-based Gaussian process for tracking blood vessels to obtain the diameter of retinal blood vessels, and the method performed well on the 'STrutred Analysis of the REtina (STARE) Database' accessed on Oct. 2020 (https://***/~ahoover/stare/). To the best of our knowledge, this experiment is one of the most recent analysis using this type of algorithm. © 2013 IEEE.

关键词： Blood vessels

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ConvNeXt Model for Breast Cancer Image Classification 6

ConvNeXt Model for Breast Cancer Image Classification

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6th international Conference on Cybernetics and Intelligent System, ICORIS 2024

作者： Setiawan, Devin Karnyoto, Andrea Stevens Intan, Indo Pardamean, Bens Department of Electrical Engineering and Computer Science University of Kansas Lawrence United States Bioinformatics and Data Science Research Center Bina Nusantara University Jakarta Indonesia Department of Informatics Engineering Universitas Dipa Makassar Makassar Indonesia Computer Science Department BINUS Graduate Program Computer Science Program Bina Nusantara University Jakarta Indonesia

ISBN: (纸本)9798331539603

Breast cancer is an occurrence of cancer that attacks breast tissue and is the most common cancer among women worldwide, affecting one in eight women. In this modern world, breast cancer image classification simplifies the process of analyzing, providing objective and accurate results. By leveraging machine learning algorithms and computer vision techniques, we developed breast cancer detection. The dataset is histopathology dataset from BreakHis and UNHAS Hospital. We chose the ConvNeXt-Tiny model then modified the classifier head as the proposed method. Before the dataset is processed by the model, we augment the images by applying random horizontal and vertical flips, adjustments to brightness, contrast, saturation, and hue using color jitter. The augmentation process simulates real-world variance and enhances the model's ability to generalize to unseen data. Our proposed model gained better performance (accuracy, F1-Score) results compared two other techniques to VGG16 and SVM. According to our experiments, the F1-Score for the ConvNeXt-Tiny model with classifier head modification is higher at 0.9516, than the gain for VGG16 at 0.9292, and the gain for the SVM at 0.83. © 2024 IEEE.

关键词： Lung cancer

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HCNNet: hybrid convolution neural network for automatic identification of ischaemia in diabetic foot ulcer wounds

HCNNet: hybrid convolution neural network for automatic iden...

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作者： Das, Sujit Kumar Namasudra, Suyel Sangaiah, Arun Kumar Computer Science and Engineering Siksha ‘O’ Anusandhan Deemed to be University Odisha Bhubaneswar India Computer Science and Engineering National Institute of Technology Agartala Tripura India International Graduate School of AI National Yunlin University of Science and Technology Douliu Taiwan Electrical and Science Engineering Lebanese American University Byblos Lebanon

The diabetic foot ulcer (DFU) is a significant medical complication for diabetic patients, which often leads to lower limb amputation. The manual identification of ischaemia in DFU is laborious, time-consuming, and costly. This study aims to develop an efficient deep learning (DL) method for the early identification of ischaemia in DFU. Therefore, a novel Convolutional Neural Network (CNN) architecture (HCNNet) is proposed by integrating multiple hybridised blocks from inception, residual, and dense modules along with appropriately placed Squeeze-and-Excitation (SE) block and intermediate transition layers. The proposed HCNNet is trained several times using various optimizer and learning rate settings to optimise its performance. It achieves promising Area Under the ROC Curve (AUC) scores of 0.999 for ischaemia identification. The experimental results show that the proposed HCNNet outperforms existing State-Of-The-Art (SOTA) methods. © 2024, The Author(s), under exclusive licence to Springer-Verlag GmbH Germany, part of Springer Nature.

关键词： Medical imaging

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Statistical Device Simulation and Machine Learning of Process Variation Effects of Vertically Stacked Gate-All-Around Si Nanosheet CFETs

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IEEE Transactions on Nanotechnology 2024年 23卷 386-392页

作者： Kola, Sekhar Reddy Li, Yiming Butola, Rajat National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Department of Electronics and Electrical Engineering Institute of Communications Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Biomedical Engineering Institute of Pioneer Semiconductor Innovation Institute of Artificial Intelligence Innovation Hsinchu300093 Taiwan

In this study, we report the process variation effect (PVE) including the work function fluctuation (WKF) on the DC/AC characteristic fluctuation of stacked gate-all-around silicon complementary field-effect transistors (CFETs). The PVE affects characteristic fluctuation significantly;in particular, for the variability of off-state current. Owing to the bottom channel of a fin-type, the P-FET suffers from the worst off-state current fluctuation (more than 200% variation) compared to the N-FET. The device variability induced by the WKF is marginal because of amorphous-type metal grains. As input features to an artificial neural network (ANN) model, low and high work function values, as well as parameters of PVE that have prevalent effects on CEFT transfer characteristics are further considered and modeled. The estimated values of R2-score prove that the ANN model properly grasps information from the dataset successfully;thus, it can be used to model emerging CFETs for circuit simulation. © 2002-2012 IEEE.

关键词： Neural networks

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A Physical-Based Artificial Neural Networks Compact Modeling Framework for Emerging FETs

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IEEE Transactions on Electron Devices 2024年第1期71卷 223-230页

作者： Yang, Ya-Shu Li, Yiming Kola, Sekhar Reddy Reddy National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory The Institute of Communications Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Institute of Communications Engineering Institute of Biomedical Engineering Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan

We report a compact modeling framework based on the Grove-Frohman (GF) model and artificial neural networks (ANNs) for emerging gate-all-around (GAA) MOSFETs. The framework consists of two ANNs;the first ANN constructed with the drain current model not only can capture the main trend of device I - V characteristics but also can predict its variation even when the amount of training data for the ANN is insufficient or outside the range of applied biases. The second one is then designed to improve the model accuracy by further minimizing the errors between the target and the model outputs. We implement the proposed framework to accurately model emerging GAA nanosheet (NS) MOSFETs and complementary FETs (CFETs) without suffering from divergent issues in circuit simulation. In addition, nonphysical behaviors, such as nonzero current at zero bias, do not occur in the modeling framework. Compared to recently reported machine-learning (ML) models, our approach can achieve a similar level of model accuracy with merely 20% amount of the training data. © 1963-2012 IEEE.

关键词： Neural networks

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Hotel Information System Management Audit Using COBIT 2019 - APO12 2

Hotel Information System Management Audit Using COBIT 2019 -...

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2nd international Conference for Innovation in Technology, INOCON 2023

作者： Utamajaya, Joy Nashar Supangat, Suhono Harso Gaol, Ford Lumban Ranti, Benny BINUS University BINUS Graduate Program School of Information System Jakarta Indonesia Bandung Institute of Technology School of Electrical Engineering and Informatic Bandung Indonesia Bina Nusantara University Computer Science Department BINUS Graduate Program Computer Science Jakarta Indonesia University of Indonesia Computer Science Department Faculty of Computer Science Depok Indonesia

ISBN: (纸本)9798350320923

In general, public or private organizations or companies have used information-based technology as a support to improve business performance to be more effective and efficient in order to achieve a company's business goals. Given the large contribution of information technology in the application of hotel applications as a supporting information system, it is a vital system that must avoid risks that can hinder and cause harm to the hotel management business processes. Therefore, it is necessary to carry out risk management using the COBIT 5 framework to manage possible risks that may occur based on the APO12 (Manage Risk) domain. From the evaluation results of the data obtained through observation and interviews as well as the calculation of the results of the questionnaire based on 6 APO12 subdomains, the results of the risk management level capability assessment in hotel applications are still at level 3 or have reached the level of established process with the target to be achieved at level 4 resulting in a gap of 1 level. Based on the results obtained, it is necessary to propose recommendations that can be used by hotels in improving the application of information technology risk management so that in the future it can achieve the expected target level so that the APO12 level of capability can increase and become more optimal. © 2023 IEEE.

关键词： Risk management

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Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2024年 5卷 9-16页

作者： Aslam, Muhammad Chang, Shu-Wei Chuang, Min-Hui Chen, Yi-Ho Lee, Yao-Jen Li, Yiming Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Electrical Engineering and Computer Science International Graduate Program National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electrical Engineering National Cheng Kung University Tainan701401 Taiwan Institute of Communications Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Pioneer Semiconductor Innovation National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Biomedical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan

Recently, a-IGZO has advanced toward the next-generation electronics system because of its compatibility with complementary metal oxide semiconductor (CMOS) and back-end-of-line (BOEL) based systems. A systematic electrical characterization of a-IGZO TFT related to reliability issues, such as positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS), would entitle its integration into novel electronics systems. Unexpectedly, PBTS is characterized by the transition of positive Vth shift to negative Vth shift (ΔVth, the positive shift followed by the stress and temperature activated negative shift). This transition is attributed to charge trapping/trap-site generations and hydrogen migration to the active layer. The ΔVth shift mechanism depends on the temperature and voltage stress. On the other hand, a negative ΔVth shift has been observed during the NBTS operation and could be attributed to the hole trapping at the interface of GI/IGZO. An effective suppression of the gate leakage current has also been observed during reliability tests. Simulation results reveal a pronounced potential at the edges of source and drain regions, and considered the origin of hydrogen migration into the IGZO layer. Thermal image results also reveal the strong temperature/potential distribution at the edges of the source/drain regions, indorsing the simulation results. © 2020 IEEE.

关键词： Oxide semiconductors

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