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International Conference on microwave and Millimeter Wave Technology Proceedings

作者： Jiefeng Zhou Ling Zhang Junhui Chen Da Li Ding Zhou Er-Ping Li College of Information Science and Electronic Engineering and The Zhejiang Key Laboratory of Advanced Micro/Nano Electronic Devices & Smart Systems and Applications Zhejiang University Hangzhou China High-Speed and High-Frequency Lab Huawei Technologies Co. Ltd Dongguan China

This paper proposes a novel four-port calibration method for on-wafer S-parameter measurement. Crosstalk terms can seriously deteriorate the measurement accuracy of high-frequency on-wafer systems. The proposed method can consider all error and crosstalk terms in on-wafer measurement using two ground-signal-signal-ground (GSSG) probes and ensure high calibration accuracy. Only six calibration standards are required to complete the four-port calibration by this method. The proposed method is verified by full-wave simulations up to 100 GHz. The simulation and calibration results are in great agreement, which proves the correctness and reliability of the proposed method.

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Long-term and short-term plasticity independently mimicked in highly reliable Ru-doped Ge_(2)Sb_(2)Te_(5) electronic synapses

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InfoMat 2024年第8期6卷 85-96页

作者： Qiang Wang Yachuan Wang Yankun Wang Luyue Jiang Jinyan Zhao Zhitang Song Jinshun Bi Libo Zhao Zhuangde Jiang Jutta Schwarzkopf Shengli Wu Bin Zhang Wei Ren Sannian Song Gang Niu State Key Laboratory for Manufacturing Systems Engineering Electronic Materials Research LaboratoryKey Laboratory of the Ministry of Education&International Center for Dielectric ResearchSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China School of Integrated Circuits Peking UniversityBeijingthe People's Republic of China Beijing Microelectronics Technology Institute Beijingthe People's Republic of China National Key Laboratory of Human-Machine Hybrid Augmented Intelligence National Engineering Research Center for Visual information and Applicationsand School of SoftwareXi'an Jiaotong UniversityXi'anthe People's Republic of China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghaithe People's Republic of China Key Laboratory of Microelectronics Device and Integrated Technology The Institute of Microelectronics of Chinese Academy of SciencesBeijingthe People's Republic of China University of Chinese Academy of Sciences Beijingthe People's Republic of China The State Key Laboratory for Manufacturing Systems Engineering&The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong UniversityXi'anthe People's Republic of China Leibniz-Institut für Kristallzüchtung Max-Born-Straße 2BerlinGermany Key Laboratory of Physical Electronics and Devices Ministry of EducationSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong UniversityXi'anthe People's Republic of China

In order to fulfill the complex cognitive behaviors in neuromorphic systems with reduced peripheral circuits,the reliable electronic synapses mimicked by single device that achieves diverse long-term and short-term plasticity are *** change random access memory(PCRAM)is of great potential for artificial synapses,which faces,however,difficulty to realize short-term plasticity due to the long-lasting resistance *** work reports the ruthenium-doped Ge_(2)Sb_(2)Te_(5)(RuGST)based PCRAM,demonstrating a series of synaptic behaviors of short-term potentiation,pair-pulse facilitation,longterm depression,and short-term plasticity in the same single *** optimized RuGST electronic synapse with the high transformation temperature of hexagonal phase>380C,the outstanding endurance>108 cycles,the low resistance drift factor of 0.092,as well as the extremely high linearity with correlation coefficients of 0.999 and 0.976 in parts of potentiation and *** investigations also go insight to mechanisms of Ru doping according to thorough microstructure characterization,revealing that Ru dopant is able to enter GST lattices thus changing and stabilizing atomic arrangement of *** leads to the short-term plasticity realized by RuGST ***,the proposed RuGST electronic synapses performs a high accuracy of94.1%in a task of image recognition of CIFAR-100 database using ResNet *** work promotes the development of PCRAM platforms for large-scale neuromorphic systems.

关键词： electronic synapses neuromorphic computing PCRAM Ru-doped Ge_(2)Sb_(2)Te_(5)

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ESD pulse width effect on RC-triggered NMOS with power on or off 1

ESD pulse width effect on RC-triggered NMOS with power on or...

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1st Annual International EOS/ESD Symposium on Design and System, IEDS 2020

作者： Zhu, Xinyu Yu, Fangjun Shen, Hongyu Xu, Zekun Dong, Shurong Key Laboratory of Micro-nano Electronic Devices and Smart Systems of Zhejiang Province College of Information Science Electronic Engineering Zhejiang University Hangzhou310027 China

The robustness of RC-triggered NMOS clamp in 28nm process is significantly reduced under the condition of long pulse width and power on. The simulation results show that the device faces the risk of turning off in the... 详细信息

ISBN: (纸本)9781585373284

关键词： Simulation Turning Electrostatic discharges Robustness Delays Clamps Transient analysis

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Design and Manipulation of Electromagnetic Metasurface Based on Bidirectional Deep Neural Network

Design and Manipulation of Electromagnetic Metasurface Based...

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International Symposium on Antennas, Propagation and EM Theory (ISAPE)

作者： Qun Ren Yongjing Dang Xiaouyue Wu Keck-Voon Ling Wei E. I. Sha Yanwei Pang School of Electrical and Information Engineering Tianjin University Tianjin China Key Laboratory of Micro-Nano Electronic Devices and Smart Systems of Zhejiang Province College of Information Science and Electronic Engineering Zhejiang University Hangzhou China

ISBN: (数字)9798350353129

ISBN: (纸本)9798350353136

In the current research field, metasurface technology has attracted much attention because of its excellent electromagnetic wave manipulation ability, and is widely used in the field of micro and nano photonics. In the lower frequency band, the megahertz band, metasurface technology also shows great potential for development, especially in the field of medical imaging, which is becoming increasingly important. However, the design process of metasurfaces is intricate and computationally costly. To tackle this challenge, this paper introduces a deep learning-based approach for the electromagnetic control and design of metasurfaces in the megahertz frequency band. By developing a Deep Neural Network (DNN), we are able to rapidly predict the electromagnetic response of metasurfaces, substantially reducing the time and memory consumption required for simulations. Moreover, the application of deep learning technology in metasurface design extends beyond forward prediction to inverse design, allowing for the prediction of metasurface structures that meet specific electromagnetic response requirements from the design objectives. This method overcomes the limitations of traditional design methods, offering new possibilities for the advancement of metasurface technology.

关键词： Electric potential Design methodology Memory management Electromagnetic scattering Artificial neural networks Predictive models Metasurfaces Electromagnetics Frequency control Photonics

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Rapid FSS Design Method Based on Fourier Transform

Rapid FSS Design Method Based on Fourier Transform

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2024 Photonics and Electromagnetics Research Symposium, PIERS 2024

作者： Qiu, Huanran Han, Jiaqi Feng, Qiang Xi, Rui Li, Ying Chen, Hongsheng Zheng, Bin Li, Long Xidian University Hangzhou Institute of Technology Hangzhou311200 China Xidian University Key Laboratory of High-Speed Circuit Design EMC of Ministry of Education School of Electronic Engineering Xi'an710071 China The Electromagnetics Academy Zhejiang University Zhejiang University International Joint Innovation Center Haining314400 China Key Lab of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang Jinhua China Institute of Zhejiang University Zhejiang University Jinhua321099 China Shaoxing Institute of Zhejiang University Zhejiang University Shaoxing312000 China

ISBN: (纸本)9798350375909

This article presents a rapid frequency selective surface (FSS) design method based on Fourier transform. The method aims to overcome the complexity and reduce the time consumption associated with the massive input simulation datasets in traditional design processes, providing an efficient and automated design solution. By introducing Fourier transform, the amount of simulation datasets can be significantly simplified, enhancing the speed and accuracy of neural network training. The method improves precision and speed in handling tasks with multiple parameters, offering an effective tool for fast FSS design. With the aid of neural network construction, users only need to input the desired simulation result curve, and the neural network model will quickly output optimal FSS structure parameters. This approach ensures design accuracy and stability while greatly increasing the efficiency of FSS design. © 2024 IEEE.

关键词： Neural network models

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Observation of spatiotemporal dynamics for topological surface states with on-demand dispersion

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Photonics Research 2024年第12期12卷 2919-2930页

作者： ZHANYUAN ZHANG ZHIHAO LAN PENGBAI XU LEIMING WU MENGLIN L.N.CHEN WEI E.I.SHA YI XU YUWEN QIN Key Laboratory of Photonic Technology for Integrated Sensing and Communication Ministry of EducationInstitute of Advanced Photonic TechnologySchool of Information EngineeringGuangdong University of TechnologyGuangzhou 510006China Department of Electronic and Electrical Engineering University College LondonLondon WC1E7JEUK Guangdong Provincial Key Laboratory of Information Photonics Technology Institute of Advanced Photonic TechnologySchool of Information EngineeringGuangdong University of TechnologyGuangzhou 510006China Department of Electrical and Electronic Engineering The Hong Kong Polytechnic UniversityHong KongChina Key Laboratory of Micro-Nano Electronic Devices and Smart Systems of Zhejiang Province College of Information Science and Electronic EngineeringZhejiang UniversityHangzhou 310027China

Dispersion management in guided wave optics is of vital importance for various *** photonics opens new horizons for manipulating unidirectional guided waves utilizing edge ***,the experimental observation of spatiotemporal dynamics for guided waves with on-demand dispersion in topological photonic crystal is an important issue awaiting ***,we experimentally investigate the spatiotemporal properties of topological surface states with on-demand dispersion,where they are supported by a truncated valley photonic crystal with surface *** observe the electromagnetic dynamics of surface states with typical dispersions,where dynamical trapping of an electromagnetic pulse mediated by the unidirectional surface state with flat dispersion and backward beam routing using reversed dispersion properties are achieved in photonic crystal *** numerical and experimental results substantiate the ultimate dispersion management for topological surface states,which could pave new ways for the manipulation of electromagnetic waves on the surface of photonic devices.

关键词： dispersion surface dynamics

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Mechanical motion tuned carrier transport characteristic of dynamic diode

arXiv

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arXiv 2023年

作者： Yang, Zunshan Zhong, Huikai Wang, Can Lu, Yanghua Feng, Lixuan Yu, Xutao Liu, Chang Lin, Shisheng College of Information Science and Electronic Engineering Zhejiang University Hangzhou310027 China Nanchang Hangkong University Nanchang330063 China State Key Laboratory of Modern Optical Instrumentation Zhejiang University Hangzhou310027 China Key Laboratory of Advanced Micro/Nano Electronic Devices & Smart Systems and Applications of Zhejiang Zhejiang University Hangzhou310027 China

Since the invention of dynamic diode, its physical properties and potential applications have attracted wide attentions. A lot of attempts have been made to harvest the rebounding current and voltage of dynamic diode. However, the underlying physical mechanism of its carrier transport characteristic was rarely explored carefully. Here, the electrical transport properties of the dynamic diode are systematically investigated with a mechanical motion tuned method, where the dynamic current-voltage curve shows a gentler growth trend compared to the static curve. The rebounding current increases with motion velocity and contact force, resulting in a reduced current with the same bias voltage and an oscillation current with a changing velocity and force. Besides, we propose a circuit model with an accurate mathematical formula expression to describe the oscillation current, where an imaginary parameter η0 is creatively added to the exponential growth term. This work shows a physical picture of adjust microscopic carrier motion with macroscopic mechanical motion, which provides strong theoretical support for designing dynamic diode devices with better performance in the future. © 2023, CC BY.

关键词： Diodes

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A Novel Physics-Assisted Genetic Algorithm (PAGA) for Decoupling Capacitor Optimization

TechRxiv

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TechRxiv 2023年

作者： Jiang, Li Zhang, Ling Tan, Shurun Li, Da Hwang, Chulsoon Fan, Jun Li, Er-Ping The Key Laboratory of Advanced Micro/Nano Electronic Devices and Smart Systems and Applications College of Information Science and Electronic Engineering Zhejiang University Hangzhou310027 China The Electromagnetic Compatibility Laboratory Missouri University of Science and Technology RollaMO65409 United States ZJU-UIUC Institute Zhejiang University Haining314400 China

This article proposes a new physics-assisted genetic algorithm (PAGA) for decoupling capacitor (decap) optimization in power distribution networks (PDNs), which is, by far, the most powerful approach to efficiently minimizing the number of decaps within an enormous search space. In the proposed PAGA method, the priority of the decap ports is first determined based on their physical loop inductances. Then, an initial solution is quickly obtained by placing decaps sequentially on the port with the highest priority. Subsequently, a GA with prior physical knowledge is developed to find better decap solutions progressively. A port removal scheme that eliminates the low-priority ports and a modified mutation operation that better guides the mutation direction is proposed to accelerate the convergence of the GA. The initial solution and the proposed auxiliary schemes can significantly narrow the search space and incorporate physical knowledge into the GA, thus greatly accelerating the convergence process. Several representative state-of-the-art algorithms and commercial tools are thoroughly compared with the proposed PAGA in different application scenarios. The proposed PAGA shows remarkably better performance in efficiently finding high-quality decap solutions and exhibits strong robustness to handle real-world and large-scale problems, which brings decap optimization algorithms to a new benchmark. © 2023, CC BY.

关键词： Genetic algorithms

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Novel Ring Silicon-Controlled Rectifier for ESD Protection of Low-Voltage Circuits

Novel Ring Silicon-Controlled Rectifier for ESD Protection o...

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Design and System (IEDS), International EOS/ESD Symposium on

作者： Fangjun Yu Xinyu Zhu Feifan Deng Yipeng Chen Shurong Dong Key Laboratory of Micro-nano Electronic Devices and Smart Systems of Zhejiang Province College of Information Science & Electronic Engineering Zhejiang University Hangzhou China

ISBN: (数字)9781585373383

ISBN: (纸本)9781665469814

In this paper, a novel ring silicon-controlled rectifier (NRSCR) for electrostatic discharge (ESD) protection is proposed. Compared with conventional SCR, the trigger voltage of NRSCR is reduced by 3.2V, and the robustness is about twice that of conventional diode and SCR, which is suitable for ESD protection of low-voltage circuits.

关键词： Electrostatic discharge protection Low voltage Current measurement Rectifiers Implants CMOS process Robustness

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Predicting the ESD window of GGNMOS using neural network

Predicting the ESD window of GGNMOS using neural network

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Design and System (IEDS), International EOS/ESD Symposium on

作者： Xinyu Zhu Fangjun Yu Feifan Deng Yipeng Chen Shurong Dong Key Laboratory of Micro-nano Electronic Devices and Smart Systems of Zhejiang Province College of Information Science & Electronic Engineering Zhejiang University Hangzhou China

Neural network modeling method for predicting the electro-static discharge (ESD) window of Gate-Grounded NMOS (GGNMOS) is introduced in this work. Compared with TCAD simulation, the time consumption is reduced by 6 or... 详细信息

ISBN: (数字)9781585373383

ISBN: (纸本)9781665469814

关键词： Neural networks Predictive models Logic gates Electrostatic discharges Discharges (electric) MOS devices

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