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检索条件"机构=The Key Laboratory of RF Circuit and System"

共 86 条记录，以下是1-10 订阅

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Broadband PA design using Bayesian algorithms with different covariance functions

Broadband PA design using Bayesian algorithms with different...

引用

作者： Huang, Jiajun Qu, Yan Hao, Zefang Cai, Jialin The Key Laboratory of RF Circuit and System Ministry of Education Hangzhou Dianzi University Hangzhou China

This article examines the effects of Bayesian optimization (BO) with different covariance functions on the optimization of a radio frequency power amplifier (rfPA). An initial PA is designed based on a Chebyshev low-pass topology using a 10 W Gallium Nitride (GaN) transistor. The objective function is established in a novel manner. The performance of the initially designed PA was optimized by using various BO algorithms, including two different acquisition functions and five different covariance functions. Both simulation and measurement results indicate that the kernel squared exponential (KSE) and Matérn32 covariance functions provide the best option for optimizing PA by BO. A broadband power amplifier (PA) operating at a frequency range from 2.5 GHz to 3.5 GHz has been developed with an output power (Pout) greater than 40.8 dBm and a power-added efficiency (PAE) greater than 65%. © 2023 John Wiley & Sons Ltd.

关键词： Power amplifiers

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Design of a Multi-Octave PA Using a Double Optimization Methodology

Design of a Multi-Octave PA Using a Double Optimization Meth...

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2023 IEEE MTT-S International Wireless Symposium, IWS 2023

作者： Zhang, Hongbo Cai, Jialin Ministry of Education Hangzhou Dianzi University Key Laboratory of Rf Circuit and System China

ISBN: (纸本)9798350336535

In this work, a double optimization algorithm is used to design a multi-octave power amplifier (PA). The initial PA is de-signed based on Chebyshev low-pass topology. The advanced de-sign system (ADS) embedded optimization technique is used to ob-tain a good starting point for Bayesian optimization (BO), and then BO method is carried out to further optimize the performance of the designed PA. Finally, a multi-octave PA with the output power of more than 40 dBm and power added efficiency (PAE) of better than 60% in the band of 0.7-3.1 GHz is obtained. © 2023 IEEE.

关键词： Power amplifiers

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An Overview of the Optimization of rf Power Amplifiers using a Bayesian Algorithm : (Invited) 19

An Overview of the Optimization of RF Power Amplifiers using...

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19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to circuit Design, SMACD 2023

作者： Cai, Jialin Guo, Jia Qu, Yan Hangzhou Dianzi University Ministry of Education Key Laboratory of Rf Circuit and System Hangzhou China

ISBN: (纸本)9798350332650

An overview of the Bayesian approach to the optimization of broad-band radio frequency power amplifiers (PAs) is presented in this paper. Basic concepts associated with the Bayesian method, and existing Bayesian optimization (BO) methodologies for rf PAs with different acquisition functions (AFs) are described and compared. Additionally, the optimized PA results obtained using those optimization techniques are presented. Comparisons and discussions have been made between PAs using different Bayesian optimization algorithms. © 2023 IEEE.

关键词： Power amplifiers

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Automatic multi-objective particle swarm optimization method for effective Doherty power amplifier design

Automatic multi-objective particle swarm optimization method...

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作者： Hao, Zefang Qu, Yan Huang, Jiajun Crupi, Giovanni Cai, Jialin The Key Laboratory of RF Circuit and System Ministry of Education Hangzhou Dianzi University Hangzhou China BIOMORF Department University of Messina Messina Italy

In this paper, an automatic multi-objective particle swarm optimization (AMOPSO) method is developed for the design of Doherty power amplifiers (DPAs). In comparison to the well-known built-in optimizer available in commercial simulators, the proposed method not only reduces the optimization time, but also provides superior power added efficiency (PAE) for the final power amplifier. According to the reported measurements, the output PAE of the fabricated DPA exceeds 50% at 6 dB backoff, the saturated PAE is more than 61%, and the saturated output power (Pout) is over 43 dBm in the target frequency range of 1.9–2.1 GHz. As compared with existing optimization methods, the proposed method allows reducing optimization time by more than 37%. © 2024 John Wiley & Sons Ltd.

关键词： Particle swarm optimization (PSO)

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An efficient mm-wave LNA impedance match synthesis methodology with coordinate descent method

An efficient mm-wave LNA impedance match synthesis methodolo...

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作者： Zhou, Jiangcheng Wen, Jincai Wang, Xu Zhuoyue Honors College Hangzhou Dianzi University Hangzhou China The Key Laboratory of RF Circuit and System Ministry of Education Hangzhou Dianzi University Hangzhou China

In this paper, a novel synthesis methodology for LNA impedance matching is proposed, which consists of two main phases: database generation and parameter optimization. In the former phase, a large-scale sweep of electromagnetic simulations of passive components is performed to speed up parameter optimization. In the latter phase, the coordinate descent method is used as the optimizer of this methodology. Since frequently dozens of parameters need to be optimized in synthesize LNAs, the coordinate descent method can temporarily fix some parameters in each iteration, thus convert the optimization problem into multiple simple low or even one-dimensional optimizations, which can eventually obtain high-quality LNAs quickly in fewer descent iterations. This methodology is applied to a Ka-band two-stage differential LNA design using 65 nm CMOS technology, and the synthesis time is only 3 min, which is tens of times faster compared to existing synthesis methods. The proposed LNA circuit is fabricated and the measured results verify the feasibility of the synthesis method. © 2023 John Wiley & Sons Ltd.

关键词： Low noise amplifiers

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Optimization of Chebyshev Low-pass Topology based Broadband Power Amplifier Using PSO Algorithm 9

Optimization of Chebyshev Low-pass Topology based Broadband ...

引用

9th IEEE MTT-S International Wireless Symposium, IWS 2022

作者： Qu, Yan Cai, Jialin Hangzhou Dianzi University Key Laboratory of Rf Circuit and System Ministry of Education China

ISBN: (数字)9781665481977

ISBN: (纸本)9781665481977

In this paper, a broadband power amplifier (PA) is designed using particle swarm optimization (PSO) algorithm. The Chebyshev low-pass topology is employed to establish initial matching network of the PA. The matching impedance of the network is optimized by the PSO algorithm. The simulation results show that, with the proposed optimization method, excellent impedance matching network can be obtained. The power added efficiency (PAE) can be improved more than 10% averagely, which greater than 70%, and output power improved 1 dBm averagely, which arrived bigger than 41 dBm in the frequency band between 2GHz to 3GHz, which validate the feasibility and effectiveness of the proposed design method. © 2022 IEEE.

关键词： Power amplifiers

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A compact 9–23 GHz low noise amplifier with bandwidth extension techniques in 0.18-μm SiGe BiCMOS

A compact 9–23 GHz low noise amplifier with bandwidth exten...

引用

作者： Luo, Jiang Chen, Pengwei The Key Laboratory of RF Circuit and System Ministry of Education Hangzhou Dianzi University Hangzhou China State Key Laboratory of Millimeter Waves Southeast University Nanjing China Beijing Institute of Radio Measurement Beijing China

In this paper, a novel wideband low noise amplifier (LNA) operating in the 9–23 GHz frequency range is presented. The proposed LNA design utilizes a combination technique consisting of pole-tuning technique, shunt resistive-capacitor negative feedback, and gate-capacitive peaking technique to achieve significant bandwidth extension while maintaining acceptable overall performance. For verification, a one-stage triple-stacked LNA using the combination technique is designed and implemented in a 0.18-μm SiGe BiCMOS heterojunction bipolar transistor (HBT) process. The fabricated prototype demonstrates a peak gain of 13.8 dB at 19.5 GHz, minimum noise figure of 3.1 dB at 14 GHz, 3-dB bandwidth of 14 GHz, and a fractional bandwidth of 87.5%, while consuming a dc power of 39.6 mW. Moreover, the chip occupies a small silicon area of 0.39 mm2 including all testing pads with a core size of only 0.192 mm2. © 2023 John Wiley & Sons Ltd.

关键词： Low noise amplifiers

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Implementation of Polynomial Fitted Poly-Harmonic Distortion Model with Frequency Defined Device

Implementation of Polynomial Fitted Poly-Harmonic Distortion...

引用

2022 IEEE International Conference on Integrated circuits, Technologies and Applications, ICTA 2022

作者： Tang, Xiaoqiang Cai, Jialin Hangzhou Dianzi University Key Laboratory of Rf Circuit and System Ministry of Education China

ISBN: (数字)9781665492690

ISBN: (纸本)9781665492690

In this paper, a polynomial fitted poly-harmonic distortion (PHD) model is proposed, and it is implemented with frequency defined device (FDD). Polynomial fitting technique provides an effective method to including PHD model with different input power states through single set of model parameter. It can greatly reduce the model extraction complexity, and compact the model file size. The basic theory of PHD model, polynomial fitting method, and the FDD technique is provided in this work. A 10 W Gallium Nitride (GaN) packaged transistor is used in the test example. The results show that the proposed model has high accuracy for both fundamental and second harmonic behavioral predictions. © 2022 IEEE.

关键词： Gallium nitride

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A Novel Tempreature-Included CSWPL Model for GaN HEMTs 5

A Novel Tempreature-Included CSWPL Model for GaN HEMTs

引用

5th International Conference on circuits and systems, ICCS 2023

作者： Tang, Xiaoqiang Liu, Enduo Crupi, Giovanni Cai, Jialin Hangzhou Dianzi University Key Laboratory of Rf Circuit and System Ministry of Education Hangzhou China University of Messina Biomorf Department Messina98125 Italy

ISBN: (纸本)9798350308273

This paper presents a novel temperature-included canonical section-wise piecewise linear (CSWPL) behavioral model. The basic theory of the CSWPL model and the proposed modeling method are described in detail. A 10 W gallium nitride (GaN) high-electron-mobility transistor (HEMT) provided by Wolfspeed is used for comprehensive simulation tests. A comparison is made between the proposed model and the classical temperature-dependent CSWPL model. As a result of the developed model, accurate predictions can be made over a wide range of ambient temperatures (-20°C to 130°C) and input powers. Additionally, load-pull simulation results are presented, which demonstrate that the proposed model is able to accurately predict the output power contour as well as the power-added efficiency contour. © 2023 IEEE.

关键词： High electron mobility transistors

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An Overview of Nonlinear Behavioral Modeling Approaches for Microwave GaN Power Transistors 16

An Overview of Nonlinear Behavioral Modeling Approaches for ...

引用

16th International Conference on Advanced Technologies, systems and Services in Telecommunications, TELSIKS 2023

作者： Tang, Xiaoqiang Liu, Bo Crupi, Giovanni Cai, Jialin Hangzhou Dianzi University Key Laboratory of RF Circuit and System Ministry of Education Hangzhou310018 China University of Messina BIOMORF Department Messina98125 Italy

ISBN: (纸本)9798350347029

Over the past few decades, a variety of nonlinear behavioral modeling techniques have been developed for microwave GaN power transistors in order to accurately capture their nonlinear behavior. Despite these efforts, there is still a lack of systematic studies on the comparisons and analyses of the performance of the various modeling techniques proposed over the years. An overview of these large-signal behavioral modeling approaches, including both traditional approximation methods and machine learning (ML) methods, is provided in this paper. In addition, in order to explain the basic theory and application areas of each behavioral model, prediction capabilities are also discussed. © 2023 IEEE.

关键词： Power transistors

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