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Flexible Inverse Design of Microwave Filter Customized on Demand With Wavelet Transform Deep Learning

IEEE Transactions on Computer-Aided Design of Integrated circuits and systems 2025年第3期44卷 806-817页

作者： Xu, Kuiwen Wang, Jianguo Cai, Jialin Ma, Xuetiao Lv, Qinyi Chen, Shichang Liu, Jie Liu, Jun Hangzhou Dianzi University Innovation Center for Electronic Design Automation Technology The Key Laboratory of RF Circuits and Systems Ministry of Education Hangzhou310018 China Chang'an Campus Northwestern Polytechnical University School of Electronic Information Xi'an710060 China University of Electronic Science and Technology of China School of Electronic Science and Engineering Chengdu610054 China Information Science Academy China Electronics Technology Group Corporation Beijing100846 China

Artificial intelligence (AI) techniques are increasingly being used for the inverse design of microwave devices. However, several challenges, including intensive computation costs for training samples, high-dimensional data, nonuniformity, and low-quality samples in the design space, can negatively impact the final modeling performance. To alleviate these issues, a high-quality sampling inverse design scheme incorporating wavelet transform deep learning (HQS-WTDL) is proposed to achieve customized, automated microwave filter design. In the forward simulation-based sampling, particle swarm optimization (PSO) is used to tentatively select rule-defined samples. Multilabel synthetic minority over-sampling technique (MLSMOTE) is then applied to enlarge the training samples and improve their uniformity in the design space. An inverse modeling approach using neural networks to map the nonlinear relationship between a given set of S-parameters and required filter structural parameters is presented. Given that the dimension of the S-parameters is much higher than that of the structure parameters, the corresponding neural network used in this approach is deep and complex, with multiple layers and neurons. To reduce the number of input variables, the S-parameters are subjected to wavelet transformation, allowing for more efficient representation by the neural network. The proposed method is validated using a band-pass microstrip hairpin filter as an example. Results demonstrate that the proposed approach achieves better modeling effectiveness and inverse design efficiency than conventional methods. In addition, the proposed method allows for fast customization of device parameters, such as center frequencies and bandwidths with good prediction accuracy. © 1982-2012 IEEE.

关键词： Inverse problems

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Fast Nonlinear Reconstruction for Radiation Patterns with Phaseless Measurement in Reverberation Chamber

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IEEE Antennas and Wireless Propagation Letters 2025年

作者： Wang, Mengsheng Xu, Kuiwen Peng, Fangyun Xu, Ning Chen, Xiaoming Hangzhou Dianzi University Innovation Center for Electronic Design Automation Technology Key Laboratory of RF Circuits and Systems of Ministry of Education Hangzhou310018 China Xi'an Jiaotong University School of Information and Communication Engineering Xi'an710049 China

This paper explores the potential of a nonlinear optimization algorithm, known as the Levenberg-Marquardt (LM) algorithm, to expedite the calculation of spherical wave coefficients. Reconstruction of antenna radiation patterns (AUT) within a reverberation chamber (RC) could be accomplished through the utilization of spherical wave expansion (SWE) with the measurement of power correlation coefficients. However, solving the SWE of electrically large AUT is complex and time-consuming. The matrix decomposition approach is used to convert high-dimensional matrices into multiple low-dimensional ones. Additionally, it analytically solves the Jacobian matrix within the LM, achieving a time savings of more than fivefold. The efficacy and precision of this method are substantiated through numerical calculations, simulations, and measurements. © 2002-2011 IEEE.

关键词： Reverberation

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Deep Learning-Based Wideband Spectrum Sensing with Dual-Representation Inputs and Subband Shuffling Augmentation

arXiv

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arXiv 2025年

作者： Zheng, Shilian Ye, Zhihao Zhang, Luxin Yue, Keqiang Zhao, Zhijin College of Communication Engineering Hangzhou Dianzi University Hangzhou310018 China National Key Laboratory of Electromagnetic Space Security Jiaxing314033 China Key Laboratory of RF Circuits and Systems Ministry of Education Hangzhou Dianzi University Zhejiang Hangzhou310005 China

The widespread adoption of mobile communication technology has led to a severe shortage of spectrum resources, driving the development of cognitive radio technologies aimed at improving spectrum utilization, with spectrum sensing being the key enabler. This paper presents a novel deep learning-based wideband spectrum sensing framework that leverages multi-taper power spectral inputs to achieve high-precision and sample-efficient sensing. To enhance sensing accuracy, we incorporate a feature fusion strategy that combines multiple power spectrum representations. To tackle the challenge of limited sample sizes, we propose two data augmentation techniques designed to expand the training set and improve the network’s detection probability. Comprehensive simulation results demonstrate that our method outperforms existing approaches, particularly in low signal-to-noise ratio conditions, achieving higher detection probabilities and lower false alarm rates. The method also exhibits strong robustness across various scenarios, highlighting its significant potential for practical applications in wireless communication systems. © 2025, CC BY-NC-SA.

关键词： Cognitive radio

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A Robust on-Wafer Large Signal Transistor Characterization Method at mm-Wave Frequency

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Chinese Journal of Electronics 2019年第4期28卷 871-877页

作者： SU Jiangtao CAI Jialin ZHENG Xing SUN Lingling Key Laboratory of RF Circuits and Systems Ministry of Education

Accurate on-wafer large signal characterization of rf transistor is crucial for the optimum design of wireless communication circuits. We report a novel and systematic measurement method for the accurate acquisition of input and output power of on-wafer transistors up to 40 GHz. This method employs external couplers to extract the travelling waves, combined with a novel large signal calibration algorithm to calculate the power at on-wafer probe tip. The accuracy of this method was bench marked versus conventional approaches in a real measurement bench, and further been verified by characterizing the large signal response of a 0.25μm GaN HEMT device. It is concluded that the measurement uncertainty has been greatly decreased with this new method, especially at mm-wave frequencies.

关键词： Calibration Nonlinear measurement rf power amplifier mm-wave band On-wafer test

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A Fast Two-Tone Active Load-Pull Algorithm for Assessing the Non-linearity of rf Devices

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Chinese Journal of Electronics 2022年第1期31卷 25-32页

作者： SU Jiangtao CAI Jialing ZHENG Xing SUN Lingling Key Laboratory of RF Circuits and Systems Ministry of Education Key Laboratory of Large Scale Integrated Circuits Design Zhejiang Province

Radio frequency(rf) devices used in modern wireless systems must meet increasingly complicated spectral constraints while still operating with high power efficiency. A fast real-time two-tone active loadpull algorithm is proposed to assess the relationship between nonlinear performance with associated device load impedance variations. This algorithm employs real time measurement data to extract two-tone local nonlinear behaviour model, which is further used for the prediction of injected signal value in the active real-time loadpull system, therefore minimizing the number of iterations required for load emulation. The proposed method was validated on a real two-tone load-pull measurement bench using off-the-shelf instruments. The result shows that the measurement speed has been greatly increased without sacrifice of the impedance emulation *** intelligent two-tone load-pull algorithm is expected to be applied in the designing of modern communication system and radar transmitters, as well as the validation of the models of radio frequency transistors.

关键词： measurement speed real-time load-pull system spectral constraints radio frequency transistors real time measurement data intelligent two-tone load-pull algorithm two-tone local nonlinear behaviour model radio frequency devices impedance emulation accuracy modern communication system modern wireless systems nonlinearity radiocommunication rf devices associated device load impedance variations radar transmitters injected signal value two-tone load-pull measurement bench load emulation high power efficiency fast real-time two-tone active load-pull algorithm nonlinear performance

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Scalable modeling and comparison for spiral inductors using enhanced 1-π and 2-π topologies

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Journal of Semiconductors 2010年第5期31卷 126-132页

作者：邹欢欢孙玲玲文进才刘军 Key Laboratory of RF Circuits and Systems Ministry of EducationHangzhou Dianzi University

Two different scalable models developed based on enhanced 1-πand 2-πtopologies are presented for onchip spiral inductor *** elements used in the two topologies for accurately predicting the characteristics of spiral inductors at radio frequencies are constructed in geometry-dependent equations for scalable *** a comparison between the 1-πand 2-πscalable models is made from the following aspects：the complexity of equivalent circuit models and parameter-extraction procedures,scalable rules and the accuracy of scalable *** two scalable models are further verified by the excellent match between the measured and simulated results on extracted parameters up to self-resonant frequency（Srf） for a set of spiral inductors with different L,R and N,which are fabricated by employing 0.18-μm 1P6M rf CMOS technology.

关键词： rf-CMOS on-chip spiral inductor scalable model 1-π 2-π

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rf CMOS modeling:a novel empirical large-signal model for an rf-MOSFET

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Journal of Semiconductors 2010年第4期31卷 52-56页

作者：孙玲玲吕彬义刘军陈磊 Key Laboratory of RF Circuits and Systems Ministry of EducationHangzhou Dianzi University

A novel empirical model for large-signal modeling of an rf-MOSFET is proposed. The proposed model is validated in the DC, AC, small-signal and large-signal characteristics of a 32-finger nMOSFET fabricated in SMIC＇s 0.18 μm rf CMOS technology. The power dissipation caused by self-heating is described. Excellent agreement is achieved between simulation and measurement for DC, S-parameters （50 MHz-40 GHz）, and power characteristics, which shows that our model is accurate and reliable.

关键词： rf-MOSFET large-signal model self heating

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rf CMOS modeling:a scalable model of rf-MOSFET with different numbers of fingers

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Journal of Semiconductors 2010年第11期31卷 33-37页

作者：余裕宁孙玲玲刘军 Key Laboratory of RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University

A novel scalable model for multi-finger rf MOSFETs modeling is *** the parasitic components, including gate resistance,substrate resistance and wiring capacitance,are directly determined from the *** model is further verified using a standard 0.13μm rf CMOS process with nMOSFETs of different numbers of gate fingers,with the per gate width fixed at 2.5μm and the gate length at 0.13μ*** agreement between measured and simulated S-parameters from 100 MHz to 20 GHz demonstrate the validity of this model.

关键词： rf-MOSFETs scalable model parasitic components layout-based

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A complete and accurate surface-potential based large-signal model for compound semiconductor HEMTs

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Journal of Semiconductors 2014年第3期35卷 70-78页

作者：刘军余志平孙玲玲 Key Laboratory of RF Circuits and Systems Ministry of Education Hangzhou Dianzi University

A complete and accurate surface potential based large-signal model for compound semiconductor HEMTs is presented. A surface potential equation resembling the one used in conventional MOSFET models is achieved. The analytic solutions from the traditional surface potential theory that developed in MOSFET models are inherited. For core model derivation, a novel method is used to realize a direct application of the standard surfacepotentialmodelofMOSFETsforHEMTmodeling,***-order derivatives of I–V /C–V remain continuous, making the model suitable for rf large-signal applications. Furthermore, the self-heating effects and the transconductance dispersion are also modelled. The model has been verified through comparison with measured DC IV, Gummel symmetry test, CV, minimum noise figure, small-signal Sparameters up to 66 GHz and single-tone input power sweep at 29 GHz for a 475 m0.1 m InGaAs/GaAs power pHEMT, fabricated at a commercial foundry.

关键词： surface-potential based compound semiconductor HEMTs large-signal model

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A low-phase-noise ring oscillator with coarse and fine tuning in a standard CMOS process

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Journal of Semiconductors 2012年第7期33卷 85-88页

作者：高海军孙玲玲邝小飞楼立恒 Key Laboratory of RF Circuits and Systems Ministry of EducationHangzhou Dianzi University

A low-phase-noise wideband ring oscillator with coarse and fine tuning techniques implemented in a standard 65 nm CMOS process is presented. Direct frequency modulation in the ring oscillator is analyzed and a switched capacitor array is introduced to produce the lower VCO gain required to suppress this effect. A two dimensional high-density stacked MOM-capacitor was adopted as the switched capacitor to make the proposed ring VCO compatible with standard CMOS processes. The designed ring VCO exhibits an output frequency from 480 to 1100 MHz, resulting in a tuning range of 78%, and the measured phase noise is -120 dBc/Hz @ 1 MHz at 495 MHz output. The VCO core consumes 3.84 mW under a 1.2 V supply voltage and the corresponding FOM is -169 dBc/Hz.

关键词： ring oscillator switched capacitor array phase noise MOM-capacitor standard CMOS

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