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International Conference on Solid-State and integrated Circuit technology

作者： Haiyan Lu Weibo Wang Jianjun Zhou Tangshen Chen Chen Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Device Institute Nanjing China

ISBN: (纸本)9781479932849

Two different deembedding methods, including open-short method and open-short-load+c deembedding method are discussed in this paper. These deembedding techniques are used to remove all parasitic elements of the device. Comparisons between open-short-load+c and open-short method were made using measured and simulated data on InP HEMT. The results indicate that better accuracy is achieved using open-short-load+c method on high frequency.

关键词： Frequency measurement Abstracts Q measurement Measurement uncertainty Mixers

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A 0.15µm gate InAlN/GaN HEMT with thin barrier layer

A 0.15µm gate InAlN/GaN HEMT with thin barrier layer

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IEEE Conference on Electron Devices and Solid-State circuits

作者： Jianjun Zhou Xun Dong Haiyn Lu Ceng Kong Yuechan Kong Tangsheng Chen Chen Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China

ISBN: (纸本)9781479923366

High quality thin barrier layer In 0.18 Al 0.82 N/GaN heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). A 0.15 μm gate InAlN/GaN HEMT was fabricated with 1A/mm drain current at zero gate bias. The device show good pinch-off performance. A high transconductance of 482 mS/mm and current gain cutoff frequency of 80GHz were measured without de-embedding.

关键词： Logic gates Gallium nitride Performance evaluation TV

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Research on the diamond MISFET

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Journal of Semiconductors 2013年第3期34卷 48-50页

作者：周建军柏松孔岑耿习娇陆海燕孔月婵陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

Based on the hydrogen-terminated surface channel diamond material,a 1μm gate length diamond metal-insulator-semiconductor field-effect transistor(MISFET) was *** gate dielectric Al_2O_3 was formed by naturally oxidated thin Al metal layer,and a less than 2 pA gate leakage current was obtained at gate bias between -4 V and 4 *** DC characteristic of the diamond MISFET showed a drain-current density of 80 mA/mm at drain voltage of -5 V,and a maximum transconductance of 22 mS/mm at gate-source voltage of -3 *** the small signal measurement,a current gain cutoff frequency of 2.1 GHz was also obtained.

关键词： diamond MISFET Al_2O_3

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A THz InGaAs/InP double heterojunction bipolar transistor with f_(max)=325 GHz and BV_(CBO)=10.6 V

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Journal of Semiconductors 2013年第5期34卷 76-78页

作者：程伟王元赵岩陆海燕高汉超杨乃彬 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

A common-base four finger InGaAs/InP double heterostructure bipolar transistor （DHBT） has been designed and fabricated using triple mesa structure and planarization technology. All processes are on 3-inch wafers. The area of each emitter finger is 1 × 15 μm2. The maximum oscillation frequency （fmax） is 325 GHz and the breakdown voltage BV_CBO is 10.6 V, which are to our knowledge both the highest fmax and BV_CBo ever reported for InGaAs/InP DHBTs in China. The high speed InGaAs/InP DHBT with a high breakdown voltage is promising for submillimeter-wave and THz electronics.

关键词： InP DHBT THz high breakdown

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A new on-wafer multiline thru-reflect-line (TRL) calibration standard design

A new on-wafer multiline thru-reflect-line (TRL) calibration...

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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)

作者： Haiyan Lu Zhijiang Zhou Chengwei Jianjun Zhou Tangshen Chen Chen Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing CHN Nanjing Electronic Device Institute Nanjing CHN Hangzhou Dianzi University

ISBN: (纸本)9781479943531

By using invert microstrip, a new on wafer multiline TRL calibration kits for THz measurement are designed in this paper. Our approach is based on the multi-frequency formulation of the vector network analyzer calibration problem. The calibration kits are designed covers a range of frequencies from 70 to 220 GHz. The simulator results are given in this paper.

关键词： Calibration Transmission line measurements Microstrip Measurement uncertainty Standards Power transmission lines Transistors

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A 0.33THz Schottky diode frequency doubler with 8% efficiency and 5.4mW output power

A 0.33THz Schottky diode frequency doubler with 8% efficienc...

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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)

作者： Changfei Yao Ming Zhou Yunsheng Luo Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing Jiangsu China Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute Nanjing Jiangsu China

ISBN: (纸本)9781479943531

A 0.33THz frequency doubler is realized with planar Schottky diodes, and the diode is mounted on 50 μm thick quartz substrate. The complete multiplying circuit is optimized and established in 3-D electromagnetic simulation suite. The doubler is self-bias and fixed-tuned. The highest tested multiplying efficiency is 8% and its corresponding output power is 5.4mW with input power of 68mW at 328GHz. The typical measured efficiency is 6% in frequency band 320-358GHz. To the authors' knowledge, these results are comparable to reported frequency doubler performance around 330GHz with integrated diode technology.

关键词： Schottky diodes Power generation Substrates Microwave circuits Electromagnetic waveguides integrated circuit modeling Gold

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An improved through line de-embedding method with even-odd mode measurement

An improved through line de-embedding method with even-odd m...

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IEEE International Workshop on Radio-Frequency Integration technology (RFIT)

作者： Oupeng Li Wei Cheng Lei Wang Haiyan Lu Ruimin Xu Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Chengdu P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing P. R. China

This paper presents a new S-parameter matrix calculation based de-embedding methodology. In this method, a noval even-odd mode measurement is proposed to correct the error in traditional through line de-embedding methodology. The influence of the asymmetric input and output stub is canceled. A comparison of the different de-embedding methods for active device (0.7 μm InP DHBT) are performed up to 66 GHz, the results showed that the proposed method has good accuracy and suitable for millimeter-wave (mmWave).

关键词： Scattering parameters Silicon compounds Semiconductor device measurement Indium phosphide Periodic structures Transmission line measurements Probes

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An improved AgilentHBT model for InP DHBT

An improved AgilentHBT model for InP DHBT

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Asia-Pacific Conference on Microwave

作者： Oupeng Li Lei Wang Wei Cheng Haiyan Lu Guohua Gu Jian Zhang Ruimin Xu Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Chengdu P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing P. R. China

In this paper, an improved InP/InGaAs DHBT large-signal model based on the AgilentHBT model is reported. The collector current model is modified for the consideration of hetero-junction effect, and especially, a dispersion current item is put forward and incorporated into the equivalent circuit. The proposed model is implemented by the use of symbolically-defined devices (SDD) in ADS software. The excellent fitting results in DC and s-parametmers indicate that the modified model has better accuracy compared to the conventional one.

关键词： Microwave circuits Microwave integrated circuits Microwave transistors Decision support systems Noise measurement Radiofrequency integrated circuits

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W-band InP DHBT MMIC Power Amplifier

W-band InP DHBT MMIC Power Amplifier

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International Conference on Computational Problem-Solving (ICCP)

作者： Guohua Gu Lei Wang Weibo Wang Wei Cheng Yuan Wang Haiyan Lu Oupeng Li Jian Zhang Yong Zhang Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Chengdu P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing P. R. China

ISBN: (纸本)9781479942442

In this paper, a monolithic W-band Power amplifier (PA) is presented by using 1μm InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) technology. The PA is consisted by 2 stages 2×1μm and 3 stages 4×1μm emitter width transistors. The total circuit shows small signal gain is above 15dB from 90GHz to 96GHz, and the simulated saturation output power reaches 18.5dBm@94GHz. The chip area is only 1.61mm×1.03mm. This W-band power amplifier MMIC is now being fabricated in progress on the NEDI compound semiconductor process line.

关键词： Indium phosphide Power amplifiers DH-HEMTs MMICs Heterojunction bipolar transistors integrated circuit modeling

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A large signal SDD model for InP DHBT

A large signal SDD model for InP DHBT

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International Conference on Computational Problem-Solving (ICCP)

作者： Oupeng Li Wei Cheng Lei Wang Haiyan Lu Ruimin Xu Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Chengdu P. R. China Science and Technology Monolithic Integrated Circuits Modules Laboratory Nanjing P. R. China

ISBN: (纸本)9781479942442

In this paper, a accuracy large-signal model based on agilentHBT model for InP dou-ble heterojunction bipolar transistors (DHBTs) is implemented as symbolically defined device (SDD) in Agilent ADS. The model accounts for most physical phenomena including the Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC and multi-bias small S parameters for InP DHBTs.

关键词： Mathematical model integrated circuit modeling Indium phosphide Heterojunction bipolar transistors DH-HEMTs Equations Junctions

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