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检索条件"机构=The Science and Technology on Monolithic Integrated Circuits and Modules Laboratory"

共 211 条记录，以下是181-190 订阅

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Millimeter-wave design and fabrication of GaAs micromachined patch antenna

Millimeter-wave design and fabrication of GaAs micromachined...

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2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012

作者： Pan, Li-Na Jia, Shi-Xing Hou, Fang Zhu, Jian Yu, Yuan-Wei Nanjing Electronic Devices Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China

ISBN: (纸本)9781467309028

A patch antenna at Ka-band frequency based on GaAs micromachined technologies is presented in this paper. The antenna fabricated on 300μm-thick GaAs substrate with a cavity etched in it produces a low effective dielectric region around the patch leading to improvement of bandwidth and radiation. The bandwidth of 4.1%, gain of 7.27dB and radiation efficiency of 79.5% at 36.3GHz have been simulated. The experimental results show that the bandwidth is 4.4% at 36.29GHz. © 2012 IEEE.

关键词： MEMS

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Investigation of millimeter-wave GaN HEMTs and a quick small-signal modeling method

Investigation of millimeter-wave GaN HEMTs and a quick small...

引用

2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012

作者： Zhong, Zheng Guo, Yong-Xin Zhou, Jianjun Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute China National University of Singapore Singapore Singapore

ISBN: (纸本)9781467309028

Recently, wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to RF/microwave transmitters for communications and radar systems. Of the various wide bandgap materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to investigate the status of updated GaN HEMTs technology with a view of highlighting both the progress and prospects. Besides, a quick small-signal modeling method has been presented for instant MMIC designs. © 2012 IEEE.

关键词： Millimeter waves

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Two-terminal electroluminescence of AlGaN/GaN high electron mobility transistors

Two-terminal electroluminescence of AlGaN/GaN high electron ...

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2012 International Conference on Microwave and Millimeter Wave technology, ICMMT 2012

作者： Kong, Yuechan Ren, Chunjiang Dong, Xun Zhou, Jianjun Xue, Fangshi Chen, Tangsheng Li, Liang IEEE Conference Publishing Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

ISBN: (纸本)9781467321839

Electroluminescence (EL) characteristics from reverse-biased Schottky barrier diode are investigated on AlGaN/GaN high electron mobility transistors (HEMT) with different structures. Light emission from devices under high voltage or with high gate leakage current exhibit bluish or reddish color, suggesting different emission mechanism. No obvious EL is observed in AlGaN/GaN/AlGaN double heterostructure at high drain voltage near breakdown. 2D device simulation of the AlGaN/GaN HEMT at high drain voltage shows distinct separation of electrons and holes distribution, eliminating the possibility of direct band-to-band transitions. By comparing the EL image from front side and back side of the wafer, the manufacturing related problems as well as the location of material defects are detected. © 2012 IEEE.

关键词： Electroluminescence

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Scaling technologies for millimeter-wave GaN-HEMTs

Scaling technologies for millimeter-wave GaN-HEMTs

引用

2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012

作者： Dai, Yongsheng Zhou, Jianjun Chen, Jianfeng Han, Min Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute China School of Electronic and Optical Engineer Nanjing University of Science and Technology China

ISBN: (纸本)9781467309028

GaN-HEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The parameters for the intrinsic and extrinsic parts of the transistor have been extracted for GaN-HEMTs and the correct topology derived such that simple scaling rules apply to the unit cell. This linear model is applied to build different peripheral devices by varying the number of gate fingers and the width of the device. The geometrical relationship between number of gate fngers and the gate width are derived to optimize the size of the device. © 2012 IEEE.

关键词： Millimeter waves

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Developing the Ka-band GaN Power HEMT devices

Developing the Ka-band GaN Power HEMT devices

引用

2012 5th Global Symposium on Millimeter-Waves(2012年第五届全球毫米波会议 GSMM 2012)

作者： J. J. Zhou X. Dong C. Kong Y. C. Kong C. J. Ren Z. H. Li T. S. Chen C. Chen B. Zhang Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

High quality Al0.3Ga0.7N/GaN/Al0.04Ga0.96N double heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). Two kinds of fabrication technology of Ka band GaN HEMT devices were developed. Using developed 0.25 urn self-aligned Tshaped gate technology, a 4.5 W/mm output power density and 28％ PAE were obtained in continues wave (CW) mode at 34GHz. To increase the frequency performance of the GaN HEMT devices, a 0.15 μm Yshaped gate technology was developed. By using this technology, the parasitic capacitance is effectively suppressed. The fT and fmax of the GaN HEMT device fabricated with the 0.15 μm Yshaped gate technologies were greatly improved and reached 80GHz and 110GHz, respectively. A 3.1 W/mm output power density and 26.3％ PAE were also obtained in CW mode at 34GHz.

关键词： Ka-band GaN Power HEMT

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Power GaN HEMT on Si Substrate with Al-Content Step-Graded AlGaN Transition Layers

Power GaN HEMT on Si Substrate with Al-Content Step-Graded A...

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第十七届全国化合物半导体材料微波器件和光电器件学术会议

作者： Jinyu Ni Cen Kong Jianjun Zhou Xun Dong Zhonghui Li Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

A 1.9-μm-thick GaN high electron mobility transistors (HEMT) structure has been grown on 3-inch Si (111) substrate by metalorganic chemical vapor *** using an AIN buffer layer and two AI-content step-graded AIGaN transition layers and optimizing the growth conditions,the GaN HEMT structure shown excellent electrical properties with flat film surface and good GaN crystalline quality.A sheet resistance of 328 Ω/□□ and sheet electron density of 1155 × 1013 cm-2,resulting in an electron mobility of 1650 cm2/Vs,was measured on the GaN HEMT *** GaN HEMTs were successful fabricated on this structure.A maximum drain-gate breakdown voltage BVGmax of 320 V and a maximum drain current IDSmax of 2.2 A were obtained.

关键词： GaN Si substrate HEMT Power electronic device Transition Layers

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A technology-independent table-based model for advanced GaN Schottky barrier diodes

A technology-independent table-based model for advanced GaN ...

引用

IEEE International Workshop on Radio-Frequency Integration technology (RFIT)

作者： Zheng Zhong Yong-Xin Guo Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute China National University of Singapore Singapore

In this paper, a novel non-quasi-static table-based model has been developed for advanced Gallium Nitride (GaN) Schottky barrier diodes, which are widely used in current RF energy harvesting and wireless power transmission (WPT) applications. This novel table-based model can be simply built based on the measured S-parameters and I-V characteristics of these GaN diodes. In contrast with many complicated traditional models, this technology-independent modeling method includes no ambiguous curve fitting and de-embedding processes. Furthermore, this large-signal model is theoretically suitable for all kinds of diodes and could be easily imported into the computer-aided design (CAD) software. To verify its accuracy, measured and modeled results of different kinds of GaN diodes are compared and excellent agreement has been obtained.

关键词： Decision support systems Radio frequency

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High power and high efficiency GaN HEMT with WN Schottky barrier

High power and high efficiency GaN HEMT with WN Schottky bar...

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IEEE International Workshop on Radio-Frequency Integration technology (RFIT)

作者： Tangsheng Chen Jianjun Zhou Chunjiang Ren Zhonghui Li Shichang Zhong Bin Zhang Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China

In this paper, a high power and high efficiency L/S-band GaN HEMT with tungsten nitride (WN) Schottky barrier is presented. By employing WN Schottky barrier, the reaction between the gate electrode and AlGaN layer is minimized and the Schottky barrier reveals good thermal stability. At 2.2 GHz, the developed GaN HEMT with 1.25 mm gate periphery delivers an output power density of 3.3W/mm with 75% maximum power-added efficiency (PAE). The accelerated life test shows that the mean time to failure (MTTF) of the developed devices is 1.8×10 7 hours at 150°C channel temperature with an activation energy of 1.5 e V. Output power more than 90 W and PAE about 70% are obtained with a 2×12 mm gate periphery packaged device between 1.14 GHz and 1.24 GHz.

关键词： Logic gates Gallium nitride HEMTs Schottky barriers Power generation Metals Semiconductor device measurement

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A Simple Method to Accurately Determine the Temperature Dependence of Thermal Resistance of InP HBTs

A Simple Method to Accurately Determine the Temperature Depe...

引用

2012 IEEE 11th International Conference on Solid-State and integrated Circuit technology(ICSICT-2012)

作者： Jun Liu Wei Cheng Lin Zhang Haiyan Lu Chunlin Han Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

ISBN: (纸本)9781467324748

A simple method to accurately determine the nonlinear dependence of the thermal resistance of heterojunction bipolar transistors（HBTs）on ambient and junction temperatures is presented.A nonlinear model of the thermal resistance dependence on the power dissipation is introduced for the actual junction temperature *** method is demonstrated by an accurate extraction of thermal effects of a power HBT with an effective emitter area of 1×15μm2,fabricated with an in-house InP HBT technology.

关键词： Heterojunction Bipolar Transistor thermal resistance model extraction

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Study of etch process in 4H-SiC and dielectric with metal mask

Study of etch process in 4H-SiC and dielectric with metal ma...

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第十七届全国化合物半导体材料微波器件和光电器件学术会议

作者： Gang Chen Quanhui Wang Li Li Haiqi Liu Song Bai Nanjing Electronic Devices Institute Science and Technology on Monoluhic Integrated Circuits and Modules Laboratory 210016China

Etching for fabrication of the 4H-SiC devices is an important and irreversible *** change of the etch condition leads to the visible difference of the SiC surface *** are several methods to make mask for high-density inductive coupled plasma (ICP) etching to SiC,such as photo resist (PR),Ni,Al and SiO2 *** order to get the vertical step instead of the slope step,we choose the Ni metal mask instead of PR *** this paper we report our latest work on method for manufacturing SiC semiconductor devices that is disclosed that uses dry etching with the use of ICE The method employs a Ni metal mask dry etching SiC and *** surface is smooth and the etching choice ratio of SiC:Ni or dielectric:Ni is more than 10:*** SiC devices 'characteristics are well using the home-epitaxial SiC wafer and the etch method.

关键词： 4H-SiC etching ICP metal mask dielectric

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