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检索条件"机构=The Science and Technology on Monolithic Integrated Circuits and Modules Laboratory"
211 条 记 录,以下是11-20 订阅
排序:
RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions
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Journal of Semiconductors 2022年 第9期43卷 64-67页
作者: Lishu Wu Jiayun Dai Yuechan Kong Tangsheng Chen Tong Zhang Joint International Research Laboratory of Information Display and Visualization School of Electronic Science and EngineeringSoutheast UniversityNanjing 210096China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China Key Laboratory of Micro-Inertial Instrument and Advanced Navigation Technology Ministry of EducationSchool of Instrument Science and EngineeringSoutheast UniversityNanjing 210096China
This letter presents the fabrication of InP double heterojunction bipolar transistors(DHBTs)on a 3-inch flexible substrate with various thickness values of the benzocyclobutene(BCB)adhesive bonding layer,the correspon... 详细信息
来源: 评论
Reliable and broad-range layer identification of Au-assisted exfoliated large area MoS_(2)and WS_(2)using reflection spectroscopic fingerprints
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Nano Research 2022年 第9期15卷 8470-8478页
作者: Bo Zou Yu Zhou Yan Zhou Yanyan Wu Yang He Xiaonan Wang Jinfeng Yang Lianghui Zhang Yuxiang Chen Shi Zhou Huaixin Guo Huarui Sun School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of Technology ShenzhenShenzhen 518055China Collaborative Innovation Center of Extreme OpticsShanxi UniversityTaiyuan 030006China State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China University of Science and Technology of China Hefei 230026China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China
The emerging Au-assisted exfoliation technique enables the production of a wealth of large-area and high-quality ultrathin two dimensional(2D)***,damage-free,and reliable determination of the layer number of such 2D f... 详细信息
来源: 评论
A 2-18 GHz 6-Bit GaAs Positive Voltage Driven Digitally Controlled Attenuator for Phased Array
A 2-18 GHz 6-Bit GaAs Positive Voltage Driven Digitally Cont...
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International Symposium on Antennas and Propagation (ISAP)
作者: Liwei Yan Shuang Peng Kai Zhang Ziqiang Wang Chenxi Liu Fei Yang State Key Laboratory of Millimeter Wves Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China
In this paper, an ultra-wideband 6-bit digitally controlled attenuator MMIC for the active phased array that integrates positive voltage digital driving circuits was developed, utilizing GaAs enhanced and depletion mo...
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Modeling Techniques for MHEMT Devices up to 110GHz  13
Modeling Techniques for MHEMT Devices up to 110GHz
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13th International Conference on Microwave and Millimeter Wave technology, ICMMT 2021
作者: Lu, Haiyan Wu, Shaobin Chen, Jixin Chen, Tangsheng Science And Technology On Monolithic Integrated Circuits And Modules Laboratory Nanjing China Southeast University China Nanjing Electronic Devices Institute China
This paper mainly introduces a method to build a nonlinear model of MHEMT, mainly to solve the problem of short channel effect of MHEMT. In order to accurately characterize the active devices below 110GHz, a LRRM cali... 详细信息
来源: 评论
A High-Speed Level Shifter with dVs/dt Noise Immunity Enhancement Structure for 200V monolithic GaN Power IC  35
A High-Speed Level Shifter with dVs/dt Noise Immunity Enhanc...
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35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023
作者: Zheng, Yifei Yuan, Qing Song, Deyuan Ying, Yutao Zhu, Jing Sun, Weifeng Zhang, Long Li, Sheng Wang, Denggui Zhou, Jianjun Zhang, Sen He, Nailong National Asic System Engineering Research Center Southeast University Nanjing210096 China Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China Wuxi Chipown Micro-electronics Limited Wuxi China Csmc Technologies Corporation Technology Development Department Wuxi China
monolithic integration has been demonstrated to be an ideal solution to minimize the parasitics in GaN power IC. Nonetheless, the current commercially GaN process for power IC is far less mature and only n-type HEMTs ... 详细信息
来源: 评论
Design of 40-67GHz Broadband Low Noise Amplifier MMIC
Design of 40-67GHz Broadband Low Noise Amplifier MMIC
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Fan Yang WeiBo Wang YongPing Peng Zhongfei Chen Fangjin Guo Yan Chen Nanjing Electronic Device Institute China Science and Technology on Monolithic Integrated and Modules Laboratory Nanjing China
As a front-end signal processor in the receiver, the low noise amplifier has a crucial impact on the performance of the entire signal link. In this paper, a 40-67GHz broadband low noise amplifier MMIC is designed by ...
来源: 评论
An Aging Small-signal Modeling Method of Microwave Transistors Using GA-ELM Neural Network
An Aging Small-signal Modeling Method of Microwave Transisto...
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Electronics Design Automation (ISEDA), International Symposium of
作者: Lin Cheng Hongliang Lu Xiuxiu Guo Silu Yan Wei Cheng Yuming Zhang School of Microelectronics Xidian University Xi'an China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
In this paper, an aging small-signal S-parameters modeling method for microwave transistors is explored using a genetic algorithm (GA) to optimize the Extreme Learning Machine (ELM) neural network. A dual GA-ELM neura...
来源: 评论
A Heterogeneous Integration of GaAs Schottky Barrier Diode to Quartz Substrate Using Micro Transfer-Printing
A Heterogeneous Integration of GaAs Schottky Barrier Diode t...
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Asia Communications and Photonics Conference and Exhibition (ACP)
作者: Yuxuan Wang Kunpeng Dai Bin Niu Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China
Gallium Arsenide Schottky barrier diodes (GaAs SBDs) are widely used in terahertz (THz) applications. Quartz substrate has recently emerged as a promising platform for GaAs SBDs due to its intrinsically low permittivi... 详细信息
来源: 评论
A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using $.13\mu \text{m SiGe}$ HBT process
A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using...
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IEEE International Wireless Symposium (IWS)
作者: Lu Yuxiang Li Zekun Yu Jiayang Li Huanbo Zhou Peigen Lu Haiyan Chen Jixin State Key Laboratory of Millimeter Wave Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory
A 52.5GHz-66GHz frequency tripler using $0.13\mu\mathrm{m}$ SiGe HBT process is presented, which adopts a single balanced structure, with a high conversion gain up to 14.3dB. A maximum saturated output power $(\mat... 详细信息
来源: 评论
Design of a 340 GHz GaN-Based Frequency Doubler with High Output Power
Design of a 340 GHz GaN-Based Frequency Doubler with High Ou...
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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)
作者: Yiyuan Zheng Kai Zhang Kunpeng Dai Yuechan Kong Gang Lin Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China
This paper presents a high-power 340 GHz frequency doubler based on GaN Schottky barrier diode (SBD) technology. The proposed frequency doubler consists of a pair of GaN SBDs chips, a quartz circuit, as well as the tr... 详细信息
来源: 评论