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检索条件"机构=The Science and Technology on Monolithic Integrated Circuits and Modules Laboratory"
211 条 记 录,以下是11-20 订阅
排序:
A High Power 320–356GHz Frequency Multipliers with Schottky Diodes
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Chinese Journal of Electronics 2016年 第5期25卷 986-990页
作者: YAO Changfei ZHOU Ming LUO Yunsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute(NEDI) Department of Microwave and Millimeter Wave Modules NEDI
A 320–356GHz fixed-tuned frequency doubler is realized with discrete Schottky diodes mounted on 50μm thick quartz substrate. Influence of circuit channel width and thermal dissipation of the diode junctions are disc... 详细信息
来源: 评论
Effects of AlN and AlGaN Interlayer on Properties of InAlN/GaN Heterostructures
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Chinese Physics Letters 2010年 第3期27卷 251-253页
作者: 董逊 李忠辉 李哲洋 周建军 李亮 李赟 张岚 许晓军 徐轩 韩春林 National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016
InAlN/GaN heterojunction structures are grown on two-inch c-face(0001) sapphire substrates by metalorganic chemical vapour deposition. AlN and AlGaN interlayers are intentionally inserted into the structure to impro... 详细信息
来源: 评论
A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology
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Chinese Physics B 2016年 第5期25卷 448-452页
作者: 李欧鹏 张勇 徐锐敏 程伟 王元 牛斌 陆海燕 Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
Design and characterization of a G-band(140–220 GHz) terahertz monolithic integrated circuit(TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm In Ga As/In P double heteroju... 详细信息
来源: 评论
High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with f_(max)=256 GHz and BV_(CEO)= 8.3 V
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Journal of Semiconductors 2012年 第1期33卷 56-58页
作者: Cheng Wei Zhao Yan Gao Hanchao Chen Chen Yang Naibin Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016China
An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology. All processes are on 3-inch wafers. The DHBT with an emitter area of 1×... 详细信息
来源: 评论
A 220 GHz dynamic frequency divider in 0.5μm InP DHBT technology
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Journal of Semiconductors 2017年 第5期38卷 82-87页
作者: Wei Cheng Youtao Zhang Yuan Wang Bin Niu Haiyan Lu Long Chang Junling Xie Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
A high performance 3 inch 0.5 μm InP DHBT technology with three interconnecting layers has been *** epitaxial layer structure and geometry parameters of the device were carefully studied to get the required *** 0.5 &... 详细信息
来源: 评论
Millimeter-wave fixed-tuned subharmonic mixers with planar Schottky diodes
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Journal of Semiconductors 2012年 第11期33卷 95-99页
作者: 姚常飞 周明 罗运生 王毅刚 许从海 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute
Two different frequency bandwidth subharmonic mixers(SHM) using planar Schottky mixing diodes are discussed and ***-wave analysis is carried out to find the optimum diode embedding impedances with a lumped port for ... 详细信息
来源: 评论
Millimeter wave broadband high sensitivity detectors with zero-bias Schottky diodes
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Journal of Semiconductors 2015年 第6期36卷 105-109页
作者: 姚常飞 周明 罗运生 许从海 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute
Two broadband detectors at W-band and D-band are analyzed and designed with low barrier Schottky diodes. The input circuit of the detectors is realized by low and high impedance microstrip lines, and their output circ... 详细信息
来源: 评论
Capacitance-voltage characteristic of Ga- and N-polar AlGaN/GaN HEMTs
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Physica Status Solidi (C) Current Topics in Solid State Physics 2016年 第5-6期13卷 317-320页
作者: Peng, Daqing Li, Zhonghui Li, Chuanhao Zhang, Dongguo Li, Liang Dong, Xun Pan, Lei Luo, Weike Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
Ga- and N-polar AlGaN/GaN HEMTs were designed and epitaxially grown on Si- and C-face SiC substrates by MOCVD. The Capacitance-voltage characteristics of the two structures were investigated by C-V profile and drift-d... 详细信息
来源: 评论
W-band high output power Schottky diode doublers with quartz substrate
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Journal of Semiconductors 2013年 第12期34卷 77-81页
作者: 姚常飞 周明 罗运生 李姣 许从海 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute
W-band quartz based high output power fix-tuned doublers are analyzed and designed with planar Schot- tky diodes. Full-wave analysis is carried out to find diode embedding impedances with a lumped port to model the no... 详细信息
来源: 评论
Silicone oil-based solar-thermal fluids dispersed with PDMS-modified Fe3O4@graphene hybrid nanoparticles
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Progress in Natural science:Materials International 2018年 第5期28卷 554-562页
作者: Peng Tao Lei Shu Jingyi Zhang Chiahsun Lee Qinxian Ye Huaixin Guo Tao Deng State Key Laboratory of Metal Matrix Composites School of Materials Science and Engineering Shanghai Jiao Tong University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory
One of the most challenging problems that limit the practical application of carbon-based photothermal nanofluids is their poor dispersion stability and tendency to form aggregation. Herein, by using Fe3O4@graphene hy... 详细信息
来源: 评论