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Asia-Pacific Conference on Microwave

作者： Zhihao Chen Xinxin Yu Shuman Mao Yu Fu Jianjun Zhou Yuechan Kong Tangsheng Chen Ruimin Xu Bo Yan Yuehang Xu School of Electronic Science and Engineering University of Electronic Science and Technology of China Chengdu China Research Center of Integrated Circuits and Systems Yangtze Delta Region Institute (Huzhou) University of Electronic Science and Technology of China Huzhou China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

The short channel effects (SCEs) are mainly caused by the generated insufficient depletion region under the gate, which can severely reduce the reliability of devices. In this paper, the effects are analyzed by the proposed metal-insulator-semiconductor (MIS) capacitance model and can be suppressed by the applied high-k upper passivation layer (UPL). To verify the proposed model, the hydrogen-terminated diamond MIS field-effect transistors (C-H diamond MISFETs) with a 40-/100-$\mathrm{nm} \,\mathrm{Al}_{2} \mathrm{O}_{3} / \mathrm{HfO}_{2}$ stacked passivation layer were fabricated. Benefiting from the 100 -nm-thick HfO 2 UPL, the SCEs are suppressed and a high on/off ratio of $\sim 1 \times 10^{9}$ is achieved in the C-H diamond MISFET even a low aspect ratio of 7.5 for the first time. A cut-off frequency (${f}_{\mathrm{T}})$ of 6.1GHz and maximum oscillation frequency $\left(f_{\max }\right.$) of 11.1GHz were also obtained. The above results indicate that C-H diamond MISFETs with a high-k UPL in this work are promising in the high reliability and high frequency applications.

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A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS technology 14

A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS T...

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14th International Conference on Microwave and Millimeter Wave technology, ICMMT 2022

作者： Zhang, Yi Liu, Yaqin Xia, Hongliang Yang, Lei Wang, Yang Zhang, Youtao Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China

ISBN: (纸本)9781665467520

Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture is finally determined to be 3.5b3+5b. The redundant calibration technology is adopted between each stage to reduce the influence of comparator offset on ADC accuracy. To reduce power consumption and area, SHA-less sampling is adopted. The traditional bootstrap switch is improved to dynamically change the substrate potential so as to reduce the influence of leakage in SHA-less sampling circuit. The post-simulation results shows that the high-speed pipeline ADC designed in this paper can reach 9.97-bit ENOB and 67.76 dB SFDR under the sampling frequency of 100MS/s and input signal frequency of Nyquist, the overall power consumption is about 390mW, and the overall area of the layout is 4.56mm2. © 2022 IEEE.

关键词： Electric power utilization

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Nondestructive visualization of graphene on Pt with methylene blue surface modification

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science China Materials 2022年第10期65卷 2763-2770页

作者： He Kang Yanhui Zhang Yun Wu Shike Hu Jing Li Zhiying Chen Yanping Sui Shuang Wang Sunwen Zhao Runhan Xiao Guanghui Yu Songang Peng Zhi Jin Xinyu Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device InstituteNanjing 210016China Microwave Devices and Integrated Circuits Department Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

Efficient large-scale nondestructive quality assessment of graphene on Pt is essential to the in-depth growth research and practical applications of ***,we present a very simple method for directly observing the domains and defects in graphene on Pt using an ordinary optical *** was achieved by modifying graphene on Pt using methylene blue(MB).Because the chemical activities of graphene and Pt surface differ significantly,the adsorption and reaction of MB on graphene and platinum surface *** can determine the distribution of graphene crystal domains and defects by comparing the colors in the optical *** addition,this characterization method causes no obvious damage to the Pt substrate and ***,it does not affect the recycling of the substrate or the subsequent characterization or application of *** study provides a nondestructive method for measuring the quality of graphene on Pt on a large scale,as well as a reference for the characterization and doping of other two-dimensional materials.

关键词： graphene Pt nondestructive visualization surface modification methylene blue

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Design of a novel S-band broadband CW self-biased GaN power amplifier for communication 2021

Design of a novel S-band broadband CW self-biased GaN power ...

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9th International Conference on Communications and Broadband Networking, ICCBN 2021

作者： Zhang, Luchuan Zhong, Shichang Chen, Yue Tang, Shijun Sun, Chunmei Southeast University Department of Electronic Science and Engineering Nanjing Electronic Devices Institute National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute China

ISBN: (纸本)9781450389174

In this paper, a S-band broadband internally matched power amplifier is designed based on GaN HEMT using internal-matching method in input and output respectively. A single-power-supplied self-biased structure is adopted to provide instantaneous protection. Test results show that the output power is more than 20W with the power gain of over 15dB and power added efficiency over 58% at the condition of Vds=32V, continuous wave from 2.2GHz to 2.6GHz. © 2021 ACM.

关键词： Power amplifiers

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Design of a RF Doherty Power Amplifier Based on Handset Application

Design of a RF Doherty Power Amplifier Based on Handset Appl...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Yujie Tang Yingjie Zhou Hao Zhou Lei Yang Yuan Zheng Yufeng Guo Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

A Doherty Power Amplifier (PA) with high efficiency and high linearity that can be used in smart communication devices such as mobile phones in the sub-6GHz frequency band is proposed. This Doherty PA uses the InGaP/GaAs hetero-junction bipolar transistor (HBT) process. Compared with the traditional Doherty PA, the PA in this paper combines the choke inductance of the output collector and the phase compensation circuit with the output circuit of the Doherty PA respectively, which reduces the number of components required for matching. From the simulation, when the power supply voltage of the Doherty power amplifier is 4.2V, the operating frequency is 3.5GHz and the output power is 26.5dBm, the power added efficiency (PAE) reaches 34.5%, at the same time when using a 10MHz bandwidth LTE-3GPPFDD modulated signal the Adjacent Channel Power Ratio (ACPR) below to -35dBc.

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Blind Calibration Algorithm for Time-interleaved Analog-to-Digital Conversion System

Blind Calibration Algorithm for Time-interleaved Analog-to-D...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Ziqian Jiang Jie Xu Xiaopeng Li Youtao Zhang Changchun Zhang Yufeng Guo Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

This paper presents a blind calibration algorithm for a multi-channel time-interleaved analog-to-digital conversion system implemented in MATLAB/simulink. The behavior level simulation of the calibration system is carried out. The simulation results show that the signal-to-noise ratio (SNR), signal-to-noise-distortion ratio(SNDR), and spurious-free dynamic range (SFDR) of the signal corrected by the calibration system are greatly improved, which lays a solid foundation for the subsequent digital circuit design. Behavioral simulations are presented for a 4-channel 10-bit TI-ADC in order to verify the effectiveness of the proposed method. Using the introduced calibration technique, SFDR increased by 33 dB on average.

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Low surface roughness gaas/si thin-film deposition using three-step growth method in mbe

Low surface roughness gaas/si thin-film deposition using thr...

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Asia-Pacific Conference on Silicon Carbide and Related Materials, APCSCRM 2019

作者： Wei, Wang Ben, Ma Hanchao, Gao Hailong, Yu Zhonghui, Li Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

ISBN: (纸本)9783035736427

Epitaxial GaAs-on-Si is an ideal material system for studying the physics of mismatched heteroepitaxy of a polar semiconductor layer grown on a non-polar substrate like silicon. Understanding and optimization of the initial nucleation of GaAs on silicon is the most crucial step in the success of GaAs/Si heteroepitaxy. Molecular beam epitaxy (MBE) technique has been used to deposit hetero-epitaxial GaAs thin-film on off-angle Si (100) substrate using the three-step growth method. After optimizing the growth parameters of low temperature (LT) buffer layer and high temperature (HT) epilayer, XRD analyses were performed. Characterization results of the GaAs (004) films which were not subjected to annealing, show a full-width half maximum (FWHM) of 760.1 arc sec and a root mean square (RMS) surface roughness of lower than 1 nm for a scanning area of 10 μm × 10 μm. © 2020 Trans Tech Publications Ltd, Switzerland.

关键词： Molecular beam epitaxy

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A Near-Field Focusing Circularly Polarized Radial Line Slot Array Antenna

A Near-Field Focusing Circularly Polarized Radial Line Slot ...

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European Conference on Antennas and Propagation, EuCAP

作者： Liyuan Zhong Shufeng Zheng Hangqi Yang Yanxiang Yi Qi Luo Chao Gu School of Electronic Engineering Xidian University Xi'an China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China School of Physics Engineering and Computer Science University of Hertfordshire Hatfield UK ECIT Institute Queen's University Belfast Belfast UK

This paper presents the implementation of a near-field focusing (NFF) antenna on basis of radial line slot array (RLSA). The proposed NFF-RLSA antenna is derived from the conventional single-layer spiral-patterned RLSA with circular polarizations, and near-field focused radiation characteristics is realized by adjusting the arrangements of radiating slot pairs and hence the amplitude and phase distribution of RLSA aperture. The designed NFF-RLSA antenna is 14.4λ0 in diameter and 0.17λ0 in height, where λ0 donates the wavelength in free space at the operating frequency, namely 10GHz. Simulation results show that the focus spot is 22.5λ0 away from the antenna aperture, while a focusing gain of 31.2dBi is achieved, and the size of focus spot is 2.48λ0 in width and 11.3λ0 in depth of focus, respectively.

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Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates

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Nanotechnology and Precision Engineering 2020年第4期3卷 241-243页

作者： Yongle Qi Denggui Wang Jianjun Zhou Kai Zhang Yuechan Kong Suzhen Wu Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China China Electronics Technology Group Corporation No.58 Research Institute Wuxi 204035China

Commercially available AlGaN/GaN high-electron-mobility transistors(HEMTs)are beginning to enter the public scene froma range of *** on previous studies,commercial GaN-based electronics are expected to be tolerant to different types of irradiation in *** test this assumption,we compared the characteristic electrical curves obtained at different X-ray irradiation doses for GaN HEMT devices manufactured by Infineon and *** p-GaN-based device was found to be more robust with a stable threshold voltage,whereas the threshold voltage of the device with ametal-insulator-semiconductor gatewas found to shift first in the negative and then the positive *** dynamic phenomenon is caused by the releasing and trapping effects of radiation-induced charges in the dielectric layer and at the interface of irradiated *** such,the p-GaNgate-based GaN HEMT provides a promising solution for use as an electric source in space.

关键词： p-GaN gate GaN HEMTs X-ray irradiation Threshold voltage

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Simplified Evaluation on Cooling Performance of Silicon Microfluidic Interposer

Simplified Evaluation on Cooling Performance of Silicon Micr...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Miao Yu Min Huang Jian Zhu Nanjing University School of Electronic Science and Engineering Nanjing Electronic Devices Institute Nanjing China Nanjing Electronic Devices Institute Nanjing China Nanjing University School of Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

simplified evaluation methods for the analysis on the thermal and hydraulic properties of the silicon microfluidic interposer for GaN power device cooling are proposed in this work. The microjet-microchannel hybrid structure and the parallel microchannel structure are analyzed and compared based on the theoretical and empirical equations. It is depicted that water realizes the best cooling performance among the common coolants driven by the identical pressure in the parallel microchannel structure. The convective heat transfer thermal resistance and heat transfer coefficient of the microjet-microchannel hybrid structure exhibit 22.4 % decrease and 2.24 times enhancement in comparison to the parallel microchannel structure on the conditions of the identical pressure and volume flow rate, respectively.

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