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Scaling technologies for millimeter-wave GaN-HEMTs

Scaling technologies for millimeter-wave GaN-HEMTs

2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012

作者： Dai, Yongsheng Zhou, Jianjun Chen, Jianfeng Han, Min Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute China School of Electronic and Optical Engineer Nanjing University of Science and Technology China

ISBN: (纸本)9781467309028

GaN-HEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The parameters for the intrinsic and extrinsic parts of the transistor have been extracted for GaN-HEMTs and the correct topology derived such that simple scaling rules apply to the unit cell. This linear model is applied to build different peripheral devices by varying the number of gate fingers and the width of the device. The geometrical relationship between number of gate fngers and the gate width are derived to optimize the size of the device. © 2012 IEEE.

关键词： Millimeter waves

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Development of 2500V SMB-seagull SiC JBS diodes

Development of 2500V SMB-seagull SiC JBS diodes

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International Conference on Mechatronics Engineering and Electrical Engineering, CMEEE 2014

作者： Chen, G. Zhang, Q.M. Bai, S. Liu, A. Wang, L. Huang, R.H. Li, D.H. Li, Y.N. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China Jinan Semiconductor Institute Jinan China

ISBN: (纸本)9781138027190

High voltage 4H-SiC Ti schottky Junction Barrier Schottky (JBS) diode with breakdown voltage of 2500 V and forward current of 2 A has been fabricated. A low reverse leakage current below 1.13 × 10-4 A/cm2 at the bias voltage of -2.5 kV has been obtained. The forward on-state current was 2 A at VF = 1.8 V. The chip is 2.3 mm × 2.3 mm and the active-region is 1.5 mm × 1.5 mm. The turn-on voltage is about 0.9 V. The on-state resistance is 6.52 mΩ · cm2. The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was packaged with SMB seagull package. The thickness of the N—epilayer is 24 µm, and the doping concentration is 4.0 × 1015 cm-3. A floating guard rings edge termination have been used to improve the effectiveness of the edge termination technique. By using Ti/Ni/Ag multilayer metal structure, the double side Ag process of 4H-SiC JBS diode is formed. We use the PECVD SizNy/SiO2 as the passivation dielectric and a non photosensitive polyamide with 390 °C cured temperature as the passivation in the end. © 2015 Taylor & Francis Group, London.

关键词： Silicon carbide

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Characterize and optimize the four-wave mixing in dual-interferometer coupled silicon microrings

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Chinese Physics B 2019年第10期28卷 198-203页

作者： Chao Wu Yingwen Liu Xiaowen Gu Shichuan Xue Xinxin Yu Yuechan Kong Xiaogang Qiang Junjie Wu Zhihong Zhu Ping Xu Institute for Quantum Information and State Key Laboratory of High Performance Computing College of ComputerCollege of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangsha 410073China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China National Laboratory of Solid State Microstructures and School of Physics Nanjing UniversityNanjing 210093China

By designing and fabricating a series of dual-interferometer coupled silicon microrings, the coupling condition of the pump, signal, and idler beams can be engineered independently and then we carried out both the continuous-wave and pulse pumped four-wave mixing experiments to verify the dependence of conversion efficiency on the coupling conditions of the four interacting beams, respectively. Under the continuous-wave pump, the four-wave mixing efficiency gets maximized when both the pump and signal/idler beams are closely operated at the critical coupling point, while for the pulse pump case, the efficiency can be enhanced greatly when the pump and converted idler beams are all overcoupled. These experiment results agree well with our theoretical calculations. Our design provides a platform for explicitly characterizing the four-wave mixing under different pumping conditions, and offers a method to optimize the four-wave mixing, which will facilitate the development of on-chip all-optical signal processing with a higher efficiency or reduced pump power.

关键词： silicon resonators four-wave mixing Mach-Zehnder interferometer

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A monolithic AlGaN/GaN HEMT VCO using BST film varactor

A monolithic AlGaN/GaN HEMT VCO using BST film varactor

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4th IEEE International Symposium on Radio-Frequency Integration technology, RFIT2011

作者： Kong, Cen Li, Hui Jiang, Shuwen Zhou, Jianjun Chen, Xiaojian Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing 210016 China State Key Laboratory of Electronic Thin-Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China

ISBN: (纸本)9781457705182

A monolithic AlGaN/GaN HEMT voltage controlled oscillator (VCO) using barium strontium titanate (BST) MIM varactor is reported first time. The BST thin film was fabricated by RF magnetron sputtering. The fabrication process is fully compatible with the standard GaN MMIC integrated process. An output power of 17dBm and the phase noise of -75dBc/Hz (at 100kHz) and -110dBc/Hz (at 1MHz) are obtained while the bias of the drain is 8V and BST varactor voltage is 0V. The VCO exhibits 500MHz tunable frequency bandwidth at the central frequency of 6.42GHz while BST varactor voltage changed from 0V to 20V. © 2011 IEEE.

关键词： Barium strontium titanate

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An 88∼100 GHz High-Robustness Low-Noise Amplifier with 3.0∼3.5 dB Noise Figure Using 0.1μm GaN-on-SiC process 9

An 88∼100 GHz High-Robustness Low-Noise Amplifier with 3.0...

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9th IEEE MTT-S International Wireless Symposium, IWS 2022

作者： Chen, Yan Wang, Weibo Chen, Zhongfei Guo, Fangjin Wang, Guangnian Nanjing Electronic Devices Institute 210016 China Science and Technology on Monolithic Integrated and Modules Laboratory Nanjing210016 China

ISBN: (数字)9781665481977

ISBN: (纸本)9781665481977

This paper demonstrates the designed process and experimental performance of a W -band low-noise amplifier (LNA) MMIC based on a 0.1 mu m gate length GaN-on-SiC process. A considerable available gain can be realized at low voltage in W-band. At the same time, the desired LNA takes into account enhanced output power, large power capacitance, high withstand voltage, anti-static electricity and improved reliability of GaN technology, which is more convenient to integrate with other GaN power amplifiers and switches. The LNA is composed of a 3-stage common-source amplifier constructed to operate over an 88100 GHz frequency band. This measured amplifier achieves gain of 20-21dB, noise figure of 3.0-3.5dB, output power of 14.5dBm at 1dB compression point (P-1), power capacitance of 4 W, withstand voltage of 45 V and anti-static electricity of 2000 V. The MMIC is 3.1 mathrm{x}1.5 text{mm}{2} in size and consumes 0.4 W of dc power from a 5 V supply. © 2022 IEEE.

关键词： Silicon carbide

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An Aging Small-signal Modeling Method of Microwave Transistors Using GA-ELM Neural Network

An Aging Small-signal Modeling Method of Microwave Transisto...

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2023 International Symposium of Electronics Design Automation, ISEDA 2023

作者： Cheng, Lin Lu, Hongliang Guo, Xiuxiu Yan, Silu Cheng, Wei Zhang, Yuming School of Microelectronics Xidian University Xi'an710071 China Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China

ISBN: (纸本)9798350304510

In this paper, an aging small-signal S-parameters modeling method for microwave transistors is explored using a genetic algorithm (GA) to optimize the Extreme Learning Machine (ELM) neural network. A dual GA-ELM neural network architecture was used to simulate the fresh S-parameters of InP heterojunction bipolar transistor (HBT) devices and the degradation of S-parameters after accelerated aging, respectively. Good agreement was achieved between measured and predicted results of the fresh and aging S-parameters within a frequency range of 0.1 to 40 GHz. © 2023 IEEE.

关键词： Scattering parameters

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Design of 40-67GHz Broadband Low Noise Amplifier MMIC 15

Design of 40-67GHz Broadband Low Noise Amplifier MMIC

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15th International Conference on Microwave and Millimeter Wave technology, ICMMT 2023

作者： Yang, Fan Wang, WeiBo Peng, YongPing Chen, Zhongfei Guo, Fangjin Chen, Yan Nanjing Electronic Device Institute 210016 China Science and Technology on Monolithic Integrated and Modules Laboratory Nanjing210016 China

ISBN: (纸本)9798350338874

As a front-end signal processor in the receiver, the low noise amplifier has a crucial impact on the performance of the entire signal link. In this paper, a 40-67GHz broadband low noise amplifier MMIC is designed by 0.1μm InP HEMT process. The measured results show that the gain of the MMIC achieves 27dB with a gain flatness less than ±1dB in the full band. Both the input and output return losses are better than 10dB. At the same time, the typical value of the output 1dB compression point Po(1dB) is 0.5dBm and the representative noise figure is 2.2dB. The MMIC area is 2.4mm∗1.1mm. Good performance can be achieved in the target frequency band. © 2023 IEEE.

关键词： Low noise amplifiers

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Research on failure analysis and method of GaN-based HEMTs 14

Research on failure analysis and method of GaN-based HEMTs

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14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2017

作者： Yan-Fang, Chen Wei-Ling, Guo Yan-Xu, Zhu Jian-Jun, Zhou Liang, Lei Chang-Qing, Bai Key Laboratory of Optoelectronics Technology Ministry of Education Beijing University of Technology Beijing100124 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

ISBN: (纸本)9781538648513

The reliability of GaN-based high electron mobility transistors (HEMTs) is of great importance due to the special characteristics of AlGaN/GaN heterostructure such as intense polarization effect, high material defect density, strong electric field working condition, complicated process etc. Failure analysis is the premise and foundation to improve reliability of semiconductor devices. However, there is less research on failure analysis method about HEMTs at present. In this paper, an effective method of failure analysis of HEMT is presented to analyze the failure reason of electrical stress on many occasions, and a corresponding case analysis of HEMT is carried out. Following the unique complementary detection process of electrical testing, thermal radiation and photon emission, device failure position can be determined rapidly and failure mode and mechanism can be analyzed by this method. A 4-finger GaN-based HEMT with a operating voltage of 28V and a gate width of 1.25mm are analyzed according to this failure analysis method. Two failure positions were localized and the failure mode and mechanism were determined by comprehensive analysis of testing images and data. Finally, several improvements in design and process of GaN-based HEMTs are proposed, which is a valuable reference on the failure analysis and reliability enhancement of HEMT devices. © 2017 IEEE.

关键词： Gallium nitride

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9/15GHz dual-band GaN monolithic power amplifier

9/15GHz dual-band GaN monolithic power amplifier

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2018 IEEE MTT-S International Wireless Symposium, IWS 2018

作者： Wang, Jiawen Tao, Hongqi Nanjing Electronic Devices Institute Nanjing210016 China Science and Technology on Monolithic Integrated and Modules Laboratory Nanjing210016 China

ISBN: (纸本)9781538663462

This paper presents design and measurements of a 9/15 GHz dual-band monolithic power amplifier implemented in Nanjing Electronic Devices Institute's (NEDI's) 0.25-μm GaN on SiC HEMT process. Two second harmonic control branches were adopted in the design of inter-stage matching net-work(ISMN) to increase the efficiency of power amplifier. Large signal measurements exhibit saturated output power of 42dBm and 41.8dBm, and power added efficiency(PAE) of 40% and 35% at 9GHz and 15GHz in pulsed mode, respectively. © 2018 IEEE.

关键词： monolithic microwave integrated circuits

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RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions

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Journal of Semiconductors 2022年第9期43卷 64-67页

作者： Lishu Wu Jiayun Dai Yuechan Kong Tangsheng Chen Tong Zhang Joint International Research Laboratory of Information Display and Visualization School of Electronic Science and EngineeringSoutheast UniversityNanjing 210096China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China Key Laboratory of Micro-Inertial Instrument and Advanced Navigation Technology Ministry of EducationSchool of Instrument Science and EngineeringSoutheast UniversityNanjing 210096China

This letter presents the fabrication of InP double heterojunction bipolar transistors(DHBTs)on a 3-inch flexible substrate with various thickness values of the benzocyclobutene(BCB)adhesive bonding layer,the corresponding thermal resistance of the InP DHBT on flexible substrate is also measured and *** DHBT on a flexible substrate with 100 nm BCB obtains cut-off frequency f_(T)=358 GHz and maximum oscillation frequency f_(MAX)=530 ***,the frequency performance of the InP DHBT on flexible substrates at different bending radii are *** is shown that the bending strain has little effect on the frequency characteristics(less than 8.5%),and these bending tests prove that InP DHBT has feasible flexibility.

关键词： InP DHBT thermal resistance radio frequency bending

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