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检索条件"机构=The Science and Technology on Monolithic Integrated Circuits and Modules Laboratory"
211 条 记 录,以下是81-90 订阅
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Heterogeneous integration of GaAs pHEMT and Si CMOS on the same chip
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Chinese Physics B 2016年 第6期25卷 494-499页
作者: 吴立枢 赵岩 沈宏昌 张有涛 陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
In this work,we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of Ga As pseudomorphic high electron mobility transistors(p HEMTs) and Si complementary metal–oxide semiconductor... 详细信息
来源: 评论
Comparison of spin photocurrent in devices based on in-plane or out-of-plane magnetized CoFeB spin detectors
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Physical Review B 2019年 第4期100卷 045417-045417页
作者: Xiaodi Xue Laipan Zhu Wei Huang Xavier Marie Pierre Renucci Yu Liu Yang Zhang Xiaolin Zeng Jing Wu Bo Xu Zhanguo Wang Yonghai Chen Weifeng Zhang Yuan Lu Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083 China Henan Key Laboratory of Photovoltaic Materials Laboratory of Low-Dimensional Materials ScienceSchool of Physics & Electronics Henan University Kaifeng 475004 China Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China Université de Toulouse INSA-CNRS-UPS LPCNO135 Avenue de Rangueil F-31077 Toulouse France Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China Université de Lorraine Institut Jean Lamour UMR CNRS 7198 campus ARTEM 2 Allée André Guinier 54011 Nancy France
We have measured a helicity-dependent photocurrent at zero external magnetic field in a device based on a semiconductor quantum well embedded in a p-i-n junction. The device is excited under vertical incidence with ci... 详细信息
来源: 评论
Research on failure analysis and method of GaN-based HEMTs  14
Research on failure analysis and method of GaN-based HEMTs
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14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2017
作者: Yan-Fang, Chen Wei-Ling, Guo Yan-Xu, Zhu Jian-Jun, Zhou Liang, Lei Chang-Qing, Bai Key Laboratory of Optoelectronics Technology Ministry of Education Beijing University of Technology Beijing100124 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
The reliability of GaN-based high electron mobility transistors (HEMTs) is of great importance due to the special characteristics of AlGaN/GaN heterostructure such as intense polarization effect, high material defect ... 详细信息
来源: 评论
A High Power 320–356GHz Frequency Multipliers with Schottky Diodes
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Chinese Journal of Electronics 2016年 第5期25卷 986-990页
作者: YAO Changfei ZHOU Ming LUO Yunsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute(NEDI) Department of Microwave and Millimeter Wave Modules NEDI
A 320–356GHz fixed-tuned frequency doubler is realized with discrete Schottky diodes mounted on 50μm thick quartz substrate. Influence of circuit channel width and thermal dissipation of the diode junctions are disc... 详细信息
来源: 评论
A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology
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Chinese Physics B 2016年 第5期25卷 448-452页
作者: 李欧鹏 张勇 徐锐敏 程伟 王元 牛斌 陆海燕 Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
Design and characterization of a G-band(140–220 GHz) terahertz monolithic integrated circuit(TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm In Ga As/In P double heteroju... 详细信息
来源: 评论
A 13GS/s One-Bit ADC with 18GHz Analog Bandwith Based on InP DHBT technology  14
A 13GS/s One-Bit ADC with 18GHz Analog Bandwith Based on InP...
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14th IEEE International Conference on Solid-State and integrated Circuit technology, ICSICT 2018
作者: Li, Xiaopeng Wang, Zhigong Zhang, Yi Zhang, Youtao Zhang, Min Institute of RF - OE ICs Southeast University Nanjing210096 China Nanjing GuoBo Electronics Co. Ltd Nanjing210016 China Nanjing Electronic Devices Institute Nanjing210016 China National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology Nanjing210046 China State Key Laboratory of Millimeter Waves Southeast University Nanjing210096 China Post-Doctoral Research Center JiangSu HengXin Technology Co. Ltd Yixing214222 China Science and Technology on Monolithic Intergrated Circuits and Modules Laboratory Nanjing210016 China
In this paper, an ultra-high-speed ultra-wide-bandwidth one-bit analog-to-digital converter (ADC) is implemented. The chip uses a latched high-sensitivity comparator to achieve one-bit quantization, and an integrated ... 详细信息
来源: 评论
Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices
arXiv
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arXiv 2019年
作者: Li, Weisheng Zhou, Jian Cai, Songhua Yu, Zhihao Zhang, Jialin Fang, Nan Li, Taotao Wu, Yun Chen, Tangsheng Xie, Xiaoyu Ma, Haibo Yan, Ke Dai, Ningxuan Wu, Xiangjin Zhao, Huijuan Wang, Zixuan He, Daowei Pan, Lijia Shi, Yi Wang, Peng Chen, Wei Nagashio, Kosuke Duan, Xiangfeng Wang, Xinran National Laboratory of Solid State Microstructures School of Electronic Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing210093 China National Laboratory of Solid State Microstructures Jiangsu Key Laboratory of Artificial Functional Materials College of Engineering and Applied Sciences Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing210093 China Department of Chemistry National University of Singapore 3 Science Drive 3 117543 Singapore Department of Materials Engineering University of Tokyo Tokyo113-8656 Japan Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing210016 China School of Chemistry and Chemical Engineering Nanjing University Nanjing210023 China Department of Chemistry and Biochemistry University of California Los AngelesCA United States
Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-quality, ultrathin high-κ dielectrics t... 详细信息
来源: 评论
Capacitance-voltage characteristic of Ga- and N-polar AlGaN/GaN HEMTs
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Physica Status Solidi (C) Current Topics in Solid State Physics 2016年 第5-6期13卷 317-320页
作者: Peng, Daqing Li, Zhonghui Li, Chuanhao Zhang, Dongguo Li, Liang Dong, Xun Pan, Lei Luo, Weike Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
Ga- and N-polar AlGaN/GaN HEMTs were designed and epitaxially grown on Si- and C-face SiC substrates by MOCVD. The Capacitance-voltage characteristics of the two structures were investigated by C-V profile and drift-d... 详细信息
来源: 评论
Design, fabrication and characterising of 100 W GaN HEMT for Ku-band application
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Journal of Semiconductors 2016年 第8期37卷 49-54页
作者: 任春江 钟世昌 李宇超 李忠辉 孔月婵 陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electron Devices InstituteNanjing 210016 China
Ku-band GaN power transistor with output power over 100 W under the pulsed operation mode is pre- sented. A high temperature A1N nucleation together with an Fe doped GaN buffer was introduced for the developed GaN HEM... 详细信息
来源: 评论
Research of temporary bonding for 3D integrational Microsystem
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Journal of Physics: Conference Series 2018年 第1期986卷
作者: G X Shi J Wu K Q Qian J Zhu Nanjing Electronic Devices Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China
Due to the thickness of current interposer must be very small, the thickness of active and passive wafers are no more than 200um, even less than 100um, sometime even less than 50um, So handing the thin wafer is the ke...
来源: 评论