作者：
Huai HuangJunjing BaoJunjun LiuRyan Scott SmithYangming SunPaul S. HoMichael L. McSwineyMansour MoinpourGrant M Klosterhhuang@physics.utexas.edu
The University of Texas at Austin Laboratory for Interconnect and Packaging Microelectronics Research Center the University of Texas at Austin Austin TX 78758 Austin TX 78758 United States 512-471-8995 512-471-8969 hhuang@physics.utexas.edu
Microelectronics Research Center Laboratory for Interconnect and Packaging Pickle Research Campus The University of Texas at Austin Austin TX 78758 United States jjbao@physics.utexas.edu
Microelectronics Research Center Laboratory for Interconnect and Packaging Pickle Research Campus The University of Texas at Austin Austin TX 78758 United States junjun.liu@***
Microelectronics Research Center Laboratory for Interconnect and Packaging Pickle Research Campus The University of Texas at Austin Austin TX 78758 United States scott_smith@mail.utexas.edu
Microelectronics Research Center Laboratory for Interconnect and Packaging Pickle Research Campus The University of Texas at Austin Austin TX 78758 United States yangming@mail.utexas.edu
Microelectronics Research Center Laboratory for Interconnect and Packaging Pickle Research Campus The University of Texas at Austin Austin TX 78758 United States paulho@mail.utexas.edu
Microelectronics Research Center Laboratory for Interconnect and Packaging Pickle Research Campus The University of Texas at Austin Austin TX 78758 United States michael.l.mcswiney@***
Intel Corporation Logic Technology Development Hillsboro OR 97124 United States mansour.moinpour@***
Intel Corporation Logic Technology Development Hillsboro OR 97124 United States grant.m.kloster@***
Intel Corporation Logic Technology Development Hillsboro OR 97124 United States
Methyl depletion and subsequent moisture uptake have been found to be the primary plasma damages leading to dielectric loss in porous organosilicate (OSG) low-k dielectrics. A vacuum vapor silylation process was devel...
详细信息
Methyl depletion and subsequent moisture uptake have been found to be the primary plasma damages leading to dielectric loss in porous organosilicate (OSG) low-k dielectrics. A vacuum vapor silylation process was developed for dielectric recovery of plasma damaged OSG low-k dielectrics. The methyl or phenyl containing silylation agents were used to convert the hydrophilic -OH groups to hydrophobic groups. Compared with Trimethylchlorosilane (TMCS) and Phenyltrimethoxysilane (PTMOS), Dimethyldichlorosilane (DMDCS) was found to be more effective in recovering surface carbon concentration and surface hydrophobicity. But the carbon recovery effect was limited to the surface ***, UV radiation with thermal activation was applied for dielectric recovery of plasma damaged OSG low-k dielectrics. The combined UV/thermal process was found to be efficient in reducing −OH, physisorbed water, and C=O bonds. The dielectric constant was recovered within 5% of the pristine sample and the leakage current was also much reduced. Aging test in air showed that no moisture retake was observed, indicating the repaired film was stable.
作者：
Hualiang ShiJunjing BaoJunjun liuHuai HuangPaul S. HoMichael D GoodnerMansour MoinpourGrant M Klosterhlshi@physics.utexas.edu
The University of Texas at Austin Laboratory for Interconnect and Packaging PRC Bldg. 160 10100 Burnet Road Austin TX 78758 United States 512-471-8966 512-471-8969 jjbao@physics.utexas.edu
The University of Texas at Austin Laboratory for Interconnect and Packaging Microelectronics Research Center PRC Bldg. 160 10100 Burnet Road Austin TX 78758 United States liujj@mail.texas.edu
The University of Texas at Austin Laboratory for Interconnect and Packaging Microelectronics Research Center PRC Bldg. 160 10100 Burnet Road Austin TX 78758 United States hhuang@physics.utexas.edu
The University of Texas at Austin Laboratory for Interconnect and Packaging Microelectronics Research Center PRC Bldg. 160 10100 Burnet Road Austin TX 78758 United States paulho@mail.utexas.edu
The University of Texas at Austin Laboratory for Interconnect and Packaging Microelectronics Research Center PRC Bldg. 160 10100 Burnet Road Austin TX 78758 United States michael.d.goodner@***
Intel Corporation Logic Technology Development Hillsboro OR 97124 United States mansour.moinpour@***
Intel Corporation Logic Technology Development Hillsboro OR 97124 United States grant.m.kloster@***
Intel Corporation Logic Technology Development Hillsboro OR 97124 United States
During an O2 plasma ashing process, carbon depletion and subsequent moisture uptake caused increase of keff and the leakage current in an organosilicate (OSG) low-k dielectric. For dielectric restoration, additional C...
详细信息
During an O2 plasma ashing process, carbon depletion and subsequent moisture uptake caused increase of keff and the leakage current in an organosilicate (OSG) low-k dielectric. For dielectric restoration, additional CH4 plasma treatment on the O2 plasma ashed OSG low-k dielectric was investigated using angle resolved x-ray photoelectron spectroscopy (ARXPS), XPS depth profiling, x-ray reflectivity (XRR), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and contact angle goniometer. After CH4 plasma treatment on the O2 plasma ashed OSG, the surface carbon concentration and surface hydrophobicity were partially recovered. A dense surface layer containing C=C bonds was found to have formed on the top of the damaged OSG. The C-V hysteresis and the leakage current were reduced as a result of the CH4 plasma treatment. XPS depth profiling revealed that the recovery effect was limited to the surface region.
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