Structure and luminescence of α-plane GaN on γ-plane sapphire substrate modified by Si implantation

作     者：Lijie Huang Lin Li Zhen Shang Mao Wang Junjie Kang Wei Luo Zhiwen Liang Slawomir Prucnal Ulrich Kentsch Yanda Ji Fabi Zhang Qi Wang Ye Yuan Qian Sun Shengqiang Zhou Xinqiang Wang 黄黎杰;李琳;尚震;王茂;康俊杰;罗巍;梁智文;Slawomir Prucnal;Ulrich Kentsch;吉彦达;张法碧;王琦;袁冶;孙钱;周生强;王新强

作者机构：Songshan Lake Materials LaboratoryDongguan 523808China Helmholtz-Zentrum Dresden-RossendorfInstitute of Ion Beam Physics and Materials Research01314DresdenGermany College of Mathematics and PhysicsBeijing University of Chemical TechnologyBeijing 100029China Department of Applied PhysicsCollege of ScienceNanjing University of Aeronautics and AstronauticsNanjing 211106China Dongguan Institute of OptoelectronicsPeking UniversityDongguan 523808China Key Laboratory of Nanodevices and ApplicationsSuzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of Sciences(CAS)Suzhou 215123China Guangxi Key Laboratory of Precision Navigation Technology and ApplicationGuilin University of Electronic TechnologyGuilin 541004China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2021年第30卷第5期

页      面：63-68页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：the Key-Area Research and Development Program of Guangdong Province,China(Grant Nos.2019B010132001,2020B010174003,and 2019B121204004) the Basic and Application Basic Research Foundation of Guangdong Province,China(Grant Nos.2020A1515110891 and 2019A1515111053) the Fund from the Ion Beam Center(IBC)at HZDR 

主　　题：ion implantation GaN defects 

摘      要：We show the structural and optical properties of non-polar a-plane GaN epitaxial films modified by Si ion *** gradually raising Si fluences from 5×10^(13)cm^(-2)to 5×10^(15)cm^(-2),the n-type dopant concentration gradually increases from 4.6×10^(18)cm^(-2)to 4.5×10^(20)cm^(-2),while the generated vacancy density accordingly raises from 3.7×10^(13)cm^(-2)to 3.8×10^(15)cm^(-2).Moreover,despite that the implantation enhances structural disorder,the epitaxial structure of the implanted region is still well preserved which is confirmed by Rutherford backscattering channeling spectrometry *** monotonical uniaxial lattice expansion along the a direction(out-of-plane direction)is observed as a function of fluences till 1×10^(15)cm^(-2),which ceases at the overdose of 5×10^(15)cm^(-2)due to the partial amorphization in the surface *** raising irradiation dose,a yellow emission in the as-grown sample is gradually quenched,probably due to the irradiation-induced generation of non-radiative recombination centers.