Resistive switching memory for high density storage and computing

作     者：Xiao-Xin Xu Qing Luo Tian-Cheng Gong Hang-Bing Lv Qi Liu Ming Liu 许晓欣;罗庆;龚天成;吕杭炳;刘琦;刘明

作者机构：Key Laboratory of Microelectronics Devices and Integrated TechnologyInstitute of Microelectronics of the Chinese Academy of SciencesBeijing 100029China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2021年第30卷第5期

页      面：26-51页

核心收录：

学科分类：08[工学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：the National Key R&D Program of China(Grant Nos.2018YFB0407501 and 2016YFA0201800) the National Natural Science Foundation of China(Grant Nos.61804173,61922083,61804167,61904200,and 61821091) the fourth China Association for Science and Technology Youth Talent Support Project(Grant No.2019QNRC001) 

主　　题：resistive switching memory(RRAM) three-dimensional(3D)integration reliability computing 

摘      要：The resistive random access memory(RRAM)has stimulated a variety of promising applications including programmable analog circuit,massive data storage,neuromorphic computing,*** new emerging applications have huge demands on high integration density and low power *** cross-point configuration or passive array,which offers the smallest footprint of cell size and feasible capability of multi-layer stacking,has received broad attention from the research *** such array,correct operation of reading and writing on a cell relies on effective elimination of the sneaking current coming from the neighboring *** target requires nonlinear I-V characteristics of the memory cell,which can be realized by either adding separate selector or developing implicit build-in nonlinear *** performance of a passive array largely depends on the cell nonlinearity,reliability,on/off ratio,line resistance,thermal coupling,*** article provides a comprehensive review on the progress achieved concerning 3D RRAM ***,the authors start with a brief overview of the associative problems in passive array and the category of 3D ***,the state of the arts on the development of various selector devices and self-selective cells are *** parameters that influence the device nonlinearity and current density are outlined according to the corresponding working ***,the reliability issues in 3D array are summarized in terms of uniformity,endurance,retention,and ***,scaling issue and thermal crosstalk in 3D memory array are thoroughly discussed,and applications of 3D RRAM beyond storage,such as neuromorphic computing and CMOL circuit are discussed *** and outlooks are given in the final.