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Ultralow Ohmic Contact in Recess-Free Ultrathin Barrier AlGaN/GaN Heterostructures Across a Wide Temperature Range

Chinese Journal of Electronics 2025年第1期26卷 137-145页

作者： Yuhao Wang Sen Huang Qimeng Jiang Xinhua Wang Jie Fan Haibo Yin Ke Wei Yingkui Zheng Xinyu Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Institute of Microelectronics University of Chinese Academy of Sciences

“Ohmic-before-passivation” process was implemented on ultrathin-barrier AlGaN（<6 nm）/GaN heterostructure to further reduce the ohmic contact resistance（Rc）. In this process, alloyed Ti/Al/Ni/Au ohmic metal was formed first, followed by AlN/SiNxpassivation contributed to restore two-dimensional electron gas（2DEG） in the access region. Due to the sharp change in the concentration of 2DEG at the metal edge, a reduced transfer length consisted with lower Rcare achieved compared to that of ohmic contact on AlGaN（～20 nm）/GaN heterostructure with pre-ohmic recess process. Temperature-dependent current voltage measurements demonstrate that the carrier transport mechanism is dominated by thermionic field emission above 200 K and by field emission below 200 K. The “ohmic-before-passivation” process enables the relative stability of ohmic contacts between 50 K and 475 K and significantly improves the direct current characteristics of GaN-metal-insulator-semiconductor-high electron mobility transistor, offering a promising means for scaling down and enabling the utilization of low-voltage GaN-based power devices in extreme environmental conditions.

关键词： optimal CDG framework telecommunication network routing energy efficient WSN CS compressed sensing diffusion wavelet transform matrix optimal compressed data gathering framework wireless sensor network Measurement matrix telecommunication power management measurement matrix optimization algorithm compressed data measurement sparse representation optimal data aggregation tree algorithm energy consumption trees (mathematics) Compressed sensing (CS) signal representation Wireless sensor networks (WSNs) ODAT algorithm data transmission reduction wavelet transforms wireless sensor networks Optimal data aggregation tree (ODAT) MMOA energy consumption minimization routing technology energy conservation DWTM

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An AND-type 1T-FeFET array with robust write and read operations

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Science China(Information Sciences) 2025年第2期68卷 395-396页

作者： Jiacheng XU Jiayi ZHAO Hongrui ZHANG Haoji QIAN Jiani GU Bowen CHEN Gaobo LIN Rongzong SHEN Xinda SONG Huan LIU Yian DING Minglei MA Miaomiao ZHANG Xiao YU Bing CHEN Ran CHENG Gaobo XU Huaxiang YIN Yan LIU Jiajia CHEN Chengji JIN Genquan HAN Hangzhou Institute of Technology and School of Microelectronics Xidian University Zhejiang Lab College of Integrated Circuits Zhejiang University Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

HfO2-based ferroelectric field-effect transistor（Fe FET） has become a promising solution for next-generation embedded non-volatile memory（NVM） owing to its complementary metal-oxide-semiconductor（CMOS） compatibility,small footprint, high performance, and non-destructive readout [1]. Recent research of HfO2-based Fe FET has focused on the device operation mechanisms as well as reliability issues such as the interplay between polarization switching and charge trapping/detrapping [2], read-after-write latency [3] and endurance degradation [4].

关键词： Ferroelectric devices

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Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT

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Science China(Information Sciences) 2025年第1期68卷 379-385页

作者： Fangzhou WANG Changhong GAO Guojian DING Cheng YU Zhuocheng WANG Xiaohui WANG Qi FENG Ping YU Peng ZUO Wanjun CHEN Yang WANG Haiqiang JIA Hong CHEN Bo ZHANG Zeheng WANG Songshan Lake Materials Laboratory School of Microelectronics Southern University of Science and Technology State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Manufacturing Commonwealth Scientific and Industrial Research Organisation

In this paper,we design and fabricate a Schottky-metal-insulator-semiconductor（MIS） cascode anode GaN lateral field-effect diode（CA-LFED） to achieve ultralow reverse leakage current(ILEAK).The device based on AlGaN/GaN highelectron-mobility-transistor（HEMT） includes a normally-off MIS-controlled channel that is cascoded with a high barrier height Schottky *** reverse bias,the high electric-field is effectively prevented by the normally-off MIS-controlled channel *** with the high barrier height Schottky contact,this feature significantly suppresses the *** by the device fabrication,the CA-LFED with high breakdown voltage（BV）>600 V shows an ultralow ILEAKof 3.6×10-9A/mm as well as a low forward voltage drop（VF） of 2.2 *** performance suggests that the CA-LFED can be a promising candidate for ultralow ILEAKand better VF-ILEAKtrade-off GaN power diode applications.

关键词： Schottky-MIS cascode anode lateral field-effect diode (LFED) ultralow reverse leakage current ($I_{\rm{LEAK}}$) forward drop and reverse leakage trade-off AlGaN/GaN HEMTs

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Design and Fabrication of Milliwatt and Microwatt Microwave Rectifiers Based on Low Turn-On GaN Schottky Barrier Diodes

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IEEE Microwave and Wireless technology Letters 2025年第4期35卷 444-447页

作者： Li, Qiu-Xuan Li, Yang Liu, Tao Huang, Ren-Pin Zhu, Xia Liu, Peng-Bo Wang, Xiao Chen, Zhi-Wei You, Jie Liu, Zhang-Cheng Ao, Jin-Ping Jiangnan University School of Integrated Circuits Wuxi214122 China Xidian University State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xi'an710071 China

Low turn-on GaN Schottky barrier diodes (SBDs) and dedicated rectifiers for microwatt and milliwatt microwave rectification are designed and fabricated for the first time. GaN SBDs with a low turn-on voltage (Von) of 0.32 V, a cutoff frequency (fT) of 139.47 GHz, a breakdown voltage (Vb) of 30 V, and fT × Vb/Von figure of merit (FOM) up to 13.08 THz are achieved by carefully controlling the Ti/N ratios of Schottky anode. Milliwatt and microwatt rectifiers are designed utilizing customized low turn-on GaN SBDs. The measured maximum efficiency of 84.16% and 64.36% as well as ultrawide power dynamic range of 27 dB (-7 to 20 dBm) for milliwatt rectifier and 22 dB (-12 to 10 dBm) for microwatt rectifier are obtained. The result underscores the significant potential of GaN SBDs in applications not only limited to high-power scenarios but also extended to the milliwatt and microwatt regimes of microwave energy harvesting. © 2023 IEEE.

关键词： Gallium nitride

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Ultra-high-Q photonic crystal nanobeam cavity for etchless lithium niobate on insulator(LNOI)platform

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Opto-Electronic Advances 2025年第1期8卷 59-70页

作者： Zhi Jiang Cizhe Fang Xu Ran Yu Gao Ruiqing Wang Jianguo Wang Danyang Yao Xuetao Gan Yan Liu Yue Hao Genquan Han State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian UniversityXi’an 710071China Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710129China Hangzhou Institute of Technology Xidian UniversityHangzhou 311200China

The expansive spectral coverage and superior optical properties of lithium niobate(LN)offer a comprehensive suite of tools for exploring novel *** high-quality(Q)photonic resonator cavities is crucial for enhancing light-matter ***,this task is challenging as the device performance is heavily dependent on the fabrication quality of the *** this paper,we present experimental validation of an etchless approach to fabricating high-Q photonic crystal nanobeam cavities(PCNBCs).We successfully fabricate PCNBCs with Q factors exceeding 105 while maintaining high transmittance by capitalizing on the low waveguide loss and high fabrication tolerance of TE-polarized ***,the Q factor achieved here exceeds previous reports on etchless LN PCNBCs by over an order of *** from this advancement,we further explore a variety of optical functions,including thermo-optic tuning,optically induced bistability,and Fano line shapes *** findings present promising prospects for a versatile platform technique,facilitating the development of high-performance electro-optic or acousto-optic modulators,optical logic devices,and quantum photonics,highlighting its significant impact in the field of photonic integration.

关键词： photonic crystal nanobeam cavity LNOI platform high Q thermo-optic tuning bistability Fano line shapes

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A review on monolithic 3D integration:From bulk semiconductors to low-dimensional materials

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Nano Research 2025年第3期18卷 581-604页

作者： Ziying Hu Hongtao Li Mingdi Zhang Zeming Jin Jixiang Li Wenku Fu Yunyun Dai Yuan Huang Xia Liu Yeliang Wang School of Integrated Circuits and Electronics MIIT Key Laboratory for Low-Dimensional Quantum Structure and DevicesBeijing Institute of TechnologyBeijing 100081China

Monolithic three-dimensional(M3D)integration represents a transformative approach in semiconductor technology,enabling the vertical integration of diverse functionalities within a single *** review explores the evolution of M3D integration from traditional bulk semiconductors to low-dimensional materials like two-dimensioanl(2D)transition metal dichalcogenides(TMDCs)and carbon nanotubes(CNTs).key applications include logic circuits,static random access memory(SRAM),resistive random access memory(RRAM),sensors,optoelectronics,and artificial intelligence(AI)processing.M3D integration enhances device performance by reducing footprint,improving power efficiency,and alleviating the von Neumann *** integration of 2D materials in M3D structures demonstrates significant advancements in terms of scalability,energy efficiency,and functional *** in manufacturing and scaling are discussed,along with prospects for future research ***,the M3D integration with low-dimensional materials presents a promising pathway for the development of next-generation electronic devices and systems.

关键词： monolithic three-dimensional(M3D)integration two-dimensional(2D)material logic circuit static random access memory(SRAM) resistive random access memory(RRAM) sensor optoelectronics artificial intelligence

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β-Ga2O3 solar-blind ultraviolet light detector with infinite PDCR

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Science China(Information Sciences) 2025年第4期68卷 160-165页

作者： Haifeng CHEN Xu ZHAO Xiangtai LIU Qin LU Shaoqing WANG Zhan WANG Yifan JIA Yunhe GUAN Lijun LI Yue HAO Key Laboratory of Advanced Semiconductor Devices and Materials School of Electronic EngineeringXi′an University of Posts and Telecommunications State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian University

Ultra-high photo-dark current ratio（PDCR） has always been a fascinating indicator for photodetectors. In this paper, the β-Ga2O3solar-blind ultraviolet（UV） light detector with Ni-Ni double Schottky-junctions structure is *** detector has an ultra-high PDCR value exceeding 10～8 under 254 nm UV light irradiation. The physical mechanism behind this phenomenon is to control the current competition between the two Schottky junctions by setting the drain voltage Vdand the source voltage Vs. When the flowing direction of the current in the device is converted, the current balance point B at which the dark current Id（dark）is zero appears during the conversion. Theoretically, at B point, PDCR should be infinite if the photo-current Id（photo）is not 0. In the experiment, B point where Id（dark）is actually 0 is obtained at Vd= 10.1 V in the Vd-Idcurve under Vs= 20 V and Id（photo）at B point is 8.52 μA, so the infinite PDCR realizes at B point. This paper provides new insight into Ga2O3solar blind UV detectors.

关键词： Ga$_{2}$O$_{3}$ PDCR Schottky junction solar-blind ultraviolet photodetector

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A Resistor-Based Time-Domain CMOS Temperature Sensor With +0.9°C/-0.9°C Inaccuracy (3σ) from -40°C to 125°C

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IEEE Sensors Journal 2025年第10期25卷 17374-17383页

作者： Chen, Dongjian Yang, Luhan Zhang, Yuheng Zhang, Zhong Wu, Kejun Wang, Yan Ning, Ning Yu, Qi Li, Jing University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China National Key Laboratory of Integrated Circuits and Microsystems Chongqing400060 China

As the functionality of System-on-Chip (SoC) devices continues to increase, the issue of chip heating becomes more severe. Real-time temperature detection with on-chip temperature sensors for effective thermal management has become increasingly important. This paper presents a CMOS temperature-to-digital converter based on resistor ratios. It converts temperature to frequency by two relaxation oscillators of identical structure, utilizing resistors with different temperature coefficients, thereby quantizing the temperature in the time domain. It effectively integrates the advantages of resistor sensing and time-domain quantization, including high accuracy, high flexibility, high compaction, and low power noise sensitivity. The prototype was fabricated using a 130 nm BCD process, occupying a compact area of 0.025mm2. It achieves a resolution of 86mK and an inaccuracy (3σ) of ±0.9°C following two-point calibration across the temperature range of -40°C to 125°C. The supply sensitivity remains below 4°C/V for voltage levels ranging from 1.3V to 1.6V. The temperature sensor works without external reference voltage or clock, features a conversion time of 0.12ms and consumes 169μW at 25°C. It is particularly suitable for applications in System-on-Chip (SoC). © 2001-2012 IEEE.

关键词： System-on-chip

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A Broadband Antenna with Folded Structure and Packaged Solar Cell

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IEEE Transactions on Components, Packaging and Manufacturing technology 2025年第5期15卷 1052-1059页

作者： An, Wenxing Liu, Chenxi Han, Kai Wu, Yi Luo, Yu Tianjin University Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology School of Microelectronics Tianjin300072 China Tianjin University Key Laboratory of Organic Integrated Circuit Ministry of Education School of Microelectronics Tianjin China

A broadband folded antenna with horizontal and vertical structures is proposed for 2G/3G/4G/5G sub-6-GHz applications. With the packaging process, two solar cells are mounted on the horizontal structure to replace the metallic patch for green communications. Due to the limitation of the regular shape of the solar cell, the existing unidirectional designs have achieved a bandwidth of 60.5% with solar cells for radiation directly. Compared with previous work, this design proposes a folded structure for solar cell antennas to increase the design flexibility. This multi-resonant structure with horizontal and vertical parts can stimulate high-order mode to enhance the broadband performance. Furthermore, this folded design can manipulate the current distribution for stable radiation performance. The measured -10-dB band is from 1.7 GHz to 3.85 GHz with a relative bandwidth of 77.4%. Unidirectional patterns are obtained with a peak gain of 5.96 dBi. Solar cells cover 55% of the top area for energy self-sufficiency. With the capacity for photovoltaic power generation, this dual-function device would be a competitive candidate for future low-carbon communications. © 2011-2012 IEEE.

关键词： Bandwidth

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1.27 GW/cm² Reverse Blocking E-Mode GaN-Si(100) Monolithic Heterogeneous Integration Cascode Switch With Ultralow Turn-On Voltage and Dynamic RON

IEEE Electron Device Letters

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IEEE Electron Device Letters 2025年第5期46卷 805-808页

作者： Fan, Yutong Zhang, Weihang Zhang, Yachao Wu, Yinhe Feng, Xin Liu, Zhihong Jiang, Yang In Mak, Pui Hao, Yue Zhang, Jincheng Xidian University National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xi'an710071 China Guangzhou Institute of Technology Xidian University Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou510555 China Institute of Microelectronics University of Macau State Key Laboratory of Analog and Mixed-Signal Vlsi China

In this letter, an E-Mode GaN-Si(100) monolithic heterogeneous integration cascode switch (RBMHIC-switch) with reverse blocking compatibility on a SiC substrate with an AlN buffer layer is demonstrated. The RBMHIC-switch with LGD of 22~μ m showed a threshold voltage (VTH) of 2.64 V, a large forward gate voltage swing of 16.27 V, a turn-on voltage (VON) of 0.3 V, and an extremely low reverse leakage current (IR) of 3.5× 10-4 mA/mm at -2000 V. The forward breakdown voltage (VFBR) of 2264 V and reverse breakdown voltage (VRBR) of 2183 V with a specific on-resistance (RON, SP ) of 3.74 mΩ ċ cm2 were achieved, resulting in a forward power figure of merit (PFOM = V BR2 /RON,SP) of 1.35 GW/cm2 and reverse PFOM of 1.27 GW/cm2. The ratio between dynamic-RON and static-RON was 1.104 and 1.127 after a 10 ms 1900 V drain stress voltage (V DS- OFF ) and a 10 ms -1900 V V DS- OFF (delay time = 1~μ s) for the RBMHIC-switches, respectively, which were the best among all existing GaN power devices with reverse blocking capability. The thermal resistance at different temperatures was also extracted. The RBMHIC-switche shows decent overall characteristics as compared to the reported results. © 1980-2012 IEEE.

关键词： Gallium nitride

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