An AND-type 1T-FeFET array with robust write and read operations

作     者：Jiacheng XU Jiayi ZHAO Hongrui ZHANG Haoji QIAN Jiani GU Bowen CHEN Gaobo LIN Rongzong SHEN Xinda SONG Huan LIU Yian DING Minglei MA Miaomiao ZHANG Xiao YU Bing CHEN Ran CHENG Gaobo XU Huaxiang YIN Yan LIU Jiajia CHEN Chengji JIN Genquan HAN 

作者机构：Hangzhou Institute of Technology and School of MicroelectronicsXidian University Zhejiang Lab College of Integrated CircuitsZhejiang University Key Laboratory of Microelectronics Devices and Integrated TechnologyInstitute of MicroelectronicsChinese Academy of Sciences 

出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))

年 卷 期：2025年第68卷第2期

页      面：395-396页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：supported in part by National Key R&D Program of China (Grant No.2023YFB4402303) National Natural Science Foundation of China (Grant Nos. 62204228, 62204229, 62204226, 62025402,91964202) 

主　　题：Ferroelectric devices 

摘      要：HfO2-based ferroelectric field-effect transistor（Fe FET） has become a promising solution for next-generation embedded non-volatile memory（NVM） owing to its complementary metal-oxide-semiconductor（CMOS） compatibility,small footprint, high performance, and non-destructive readout [1]. Recent research of HfO2-based Fe FET has focused on the device operation mechanisms as well as reliability issues such as the interplay between polarization switching and charge trapping/detrapping [2], read-after-write latency [3] and endurance degradation [4].