First-principles Simulations of Tunneling FETs Based on van der Waals MoTe2/SnS2 Heterojunctions with Gate-to-drain Overlap Design

作     者：Kun Luo Kui Gong Jiangchai Chen Shengli Zhang Yongliang Li Huaxiang Yin Zhenhua Wu 

作者机构：Key Laboratory of Microelectronics Device and Integrated TechnologyInstitute of Microelectronics of Chinese Academy of SciencesBeijing 100029China IMECAS-MU-HZW joint computing laboratory of Integrated CircuitsBeijing 100029China MIIT Key Laboratory of Advanced Display Materials and DevicesSchool of Materials Science and EngineeringNanjing University of Science and TechnologyNanjing 210094China. 

出 版 物：《Journal of Microelectronic Manufacturing》 (微电子制造学报（英文）)

年 卷 期：2020年第3卷第4期

页      面：32-39页

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：the Training Program of the Major Research Plan of the National Natural Science Foundation of China(61774168 91964103)and the MOST(2016YFA0202300) 

主　　题：2D materials heterojunction tunnel-FET gate-to-drain overlap DFT-NEGF. 

摘      要：The electronic properties and transport properties of MoTe2/SnS2 heterostructure Tunneling FETs are investigated by the density functional theory coupled with non-equilibrium Green’s function *** dimensional(2D)monolayer MoTe2 and SnS2 are combined to a vertical van der Waals heterojunction.A small staggered band gap is formed in the overlap region,while larger gaps remain in the underlap source and drain regions of monolayer MoTe2 and SnS2 *** a type-II heterojunction is favorable for tunneling ***,we suggest short stack length and large gate-to-drain overlap to enhance the on-state current suppress the leakage current *** numerical results show that at a low drain to source voltage Vds=0.05V,On/Off current ratio can reach 108 and the On-state currents is over 20μA/μm for ntype *** results present that van der Waals heterostructure TFETs can be potential candidate as next generation ultra-steep subthreshold and low-power electronic applications.