A review on the GaN-on-Si power electronic devices

作     者：Yaozong Zhong Jinwei Zhang Shan Wu Lifang Jia Xuelin Yang Yang Liu Yun Zhang Qian Sun Yaozong Zhong;Jinwei Zhang;Shan Wu;Lifang Jia;Xuelin Yang;Yang Liu;Yun Zhang;Qian Sun

作者机构：Key Laboratory of Nano-devices and ApplicationsSuzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of Sciences(CAS)Suzhou 215123China School of Electronics and Information TechnologySun Yat-Sen UniversityGuangzhou 510006China State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsSchool of PhysicsPeking UniversityBeijing 100871China Institute of SemiconductorChinese Academy of SciencesBeijing 100083China 

出 版 物：《Fundamental Research》 (自然科学基础研究（英文版）)

年 卷 期：2022年第2卷第3期

页      面：462-475页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：This work was supported by the National Natural Science Foundation of China(Grants No.62174174,61775230,61804162,61874131,62074158,U1601210,61874114,61922001,11634002,61521004,and 61927806) Guangdong Province Key-Area Research and Development Program(Grants No.2019B010130001,2019B090917005,2019B090904002,2019B090909004,2020B010174003,and 2020B010174004) the National Key Research and Development Program of China(Grants No.2016YFB0400100 and 2017YFB0402800) the Science Challenge Project(Grant No.TZ2018003) 

主　　题：GaN-on-Si Epitaxy Power device Transistor Diode Enhancement mode 

摘      要：The past decades have witnessed a tremendous development of GaN-based power electronic devices grown on Si *** article provides a concise introduction,review,and outlook of the research developments of GaN-on-Si power device *** comprehensive review has discussed the crucial issues in the state-of-the-art device technology based on both GaN materials epitaxy including stress control and point defects study,and device fabrication including normally offsolutions like Cascode,trench MIS-gate,and p-GaN *** reliability and other common fabrication issues in GaN high electron mobility transistors(HEMTs)are also ***,we give an outlook on the GaN-on-Si power devices from two aspects,namely high frequency,and high power GaN ICs,and GaN vertical power devices.