Atomically sharp interface enabled ultrahigh-speed, nonvolatile memory devices

作     者：Wu, Liangmei Wang, Aiwei Shi, Jinan Yan, Jiahao Zhou, Zhang Bian, Ce Ma, Jiajun Ma, Ruisong Liu, Hongtao Chen, Jiancui Huang, Yuan Zhou, Wu Bao, Lihong Ouyang, Min Pennycook, Stephen J. Pantelides, Sokrates T. Gao, Hong-Jun 

作者机构：Institute of Physics Chinese Academy of Sciences P. O. Box 603 Beijing100190 China Univ. of Chinese Acad. of Sciences and Cas Center for Excellence in Topological Quantum Computation Chinese Academy of Sciences P. O. Box 603 Beijing100190 China Songshan Lake Materials Laboratory Dongguan Guangdong523808 China Department of Physics College Park University of Maryland College ParkMD20742 United States Department of Materials Science and Engineering and Centre for Advanced 2D Materials National University of Singapore 117575 Singapore Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science Vanderbilt University NashvilleTN37235 United States 

出 版 物：《arXiv》 (arXiv)

年 卷 期：2021年

核心收录：

主　　题：Light extinction 

摘      要：Development of memory devices with ultimate performance has played a key role in innovation of modern electronics. As a mainstream technology nonvolatile memory devices have manifested high capacity and mechanical reliability, however current major bottlenecks include low extinction ratio and slow operational speed. Although substantial effort has been employed to improve their performance, a typical hundreds of micro-or even milli-second write time remains a few orders of magnitude longer than their volatile counterparts. We have demonstrated nonvolatile, floating-gate memory devices based on van der Waals heterostructures with atomically sharp interfaces between different functional elements, and achieved ultrahigh-speed programming/erasing operations verging on an ultimate theoretical limit of nanoseconds with extinction ratio up to 1010. This extraordinary performance has allowed new device capabilities such as multi-bit storage, thus opening up unforeseen applications in the realm of modern nanoelectronics and offering future fabrication guidelines for device scale-up. Copyright © 2021, The Authors. All rights reserved.