Highly Stable Oxide Thin-Film Transistor-Based Complementary Logic Circuits under X-ray Irradiation

作     者：Yatsu, Kie Lee, Hyun-Ah Kim, Dae Hwan Park, Ick-Joon Kwon, Hyuck-In 

作者机构：Joongbu Univ Dept Elect & Elect Engn Goyang 10279 South Korea Chung Ang Univ Sch Elect & Elect Engn Seoul 06974 South Korea 

出 版 物：《ACS APPLIED ELECTRONIC MATERIALS》 (ACS Appl. Electron. Mater.)

年 卷 期：2022年第4卷第7期

页      面：3606-3614页

核心收录：

基　　金：National Research Foundation of Korea (NRF) - Korean Government (MSIT) [2016 R 1 A 5 A 1 0 1 2 9 6 6, 2020R1A2B5B01001765, 2021M3H2A1038042] Industry Technology RD program Next-Generation Display Expert Training Project for Innovation Process and Equipment, Materials Engineers [P0012453] HRD Program for Industrial Innovation - Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea [P0017011] 

主　　题：X-ray irradiation radiation robustness SnOX TFT IGZO TFT CMOS logic circuits 

摘      要：A radiation-hard oxide-thin-film transistor (TFT)-based complementary metal-oxide-semiconductor (CMOS) logic circuit composed of p-type tin oxide (SnOX) and n-type indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) was proposed. The chemical states and crystalline structure of oxide thin films and their surface morphologies were analyzed as a function of the X-ray irradiation dose, exhibiting excellent radiation stability and durability for both oxide thin films under X-ray irradiation. After X-ray irradiation at a very high dose, a slight change in the chemical states was observed in both thin films, that is, an increase in the oxygen vacancies and tin dioxide components in the SnOX thin films and in the oxygen vacancy components in the IGZO thin films. The change in the chemical states observed in both thin films after X-ray irradiation explained the slight X-ray-induced negative shift of the transfer curves for both oxide TFTs. The fabricated CMOS inverter exhibited typical voltage transfer characteristics and a maximum gain of 33.4 V/V at a supply voltage of 10 V, which were well sustained after X-ray irradiation, even at a high dose of 100 Gy. In this study, we show that oxide-TFT-based CMOS logic circuits can potentially be used to demonstrate high-performance and radiation-robust large-area electronic systems operating in harsh X-ray environments.