The influences of model parameters on the characteristics of memristors

作     者：周静 黄达 

作者机构：National Laboratory for Parallel and Distributed ProcessingSchool of ComputerNational University of Defense TechnologyChangsha 410073China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2012年第21卷第4期

页      面：576-585页

核心收录：

学科分类：080801[工学-电机与电器] 0808[工学-电气工程] 08[工学] 

基　　金：supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61003082) the Science Fund for Creative Research Groups of the National Natural Science Foundation of China (Grant No. 60921062) 

主　　题：memristor I-V characteristics simulation program with integrated circuit emphasis 

摘      要：As the fourth passive circuit component, a memristor is a nonlinear resistor that can ＂remember＂ the amount of charge passing through it. The characteristic of ＂remembering＂ the charge and non-volatility makes memristors great potential candidates in many fields. Nowadays, only a few groups have the ability to fabricate memristors, and most researchers study them by theoretic analysis and simulation. In this paper, we first analyse the theoretical base and characteristics of memristors, then use a simulation program with integrated circuit emphasis as our tool to simulate the theoretical model of memristors and change the parameters in the model to see the influence of each parameter on the characteristics. Our work supplies researchers engaged in memristor-based circuits with advice on how to choose the proper parameters.