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Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier

Chinese Physics B 2014年第6期23卷 587-596页

作者：田晓波徐晖 Embedded System and Solid-State Engineering Technology Center School of Electronic Science and EngineeringNational University of Defense and Technology

The recent published experimental data of titanium oxide memristor devices which are tested under the same experi- mental conditions exhibit the strange instability and complexity of these devices. Such undesired characteristics preclude the understanding of the device conductive processes and the memristor-based practical applications. The possibility of the coexistence of dopant drift and tunnel barrier conduction in a memristor provides preliminary explanations for the undesired characteristics. However, current research lacks detailed discussion about the coexistence case. In this paper, dopant drift and tunnel barrier-based theories are first analyzed for studying the relations between parameters and physical variables which affect characteristics of mernristors, and then the influences of each parameter change on the conductive behaviors in the single and coexistence cases of the two mechanisms are simulated and discussed respectively. The simulation results provide further explanations of the complex device conduction. Theoretical methods of eliminating or reducing the coex- istence of the two mechanisms are proposed, in order to increase the stability of the device conduction. This work also provides the support for optimizing the fabrications of memristor devices with excellent performance.

关键词： titanium oxide memristor simulation program with integrated circuit emphasis dopant drift tun-nel barrier

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The influences of model parameters on the characteristics of memristors

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Chinese Physics B 2012年第4期21卷 576-585页

作者：周静黄达 National Laboratory for Parallel and Distributed Processing School of ComputerNational University of Defense TechnologyChangsha 410073China

As the fourth passive circuit component, a memristor is a nonlinear resistor that can ＂remember＂ the amount of charge passing through it. The characteristic of ＂remembering＂ the charge and non-volatility makes memristors great potential candidates in many fields. Nowadays, only a few groups have the ability to fabricate memristors, and most researchers study them by theoretic analysis and simulation. In this paper, we first analyse the theoretical base and characteristics of memristors, then use a simulation program with integrated circuit emphasis as our tool to simulate the theoretical model of memristors and change the parameters in the model to see the influence of each parameter on the characteristics. Our work supplies researchers engaged in memristor-based circuits with advice on how to choose the proper parameters.

关键词： memristor I-V characteristics simulation program with integrated circuit emphasis

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Fractional Resonance-Based RL_βC_α Filters

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MATHEMATICAL PROBLEMS IN ENGINEERING 2013年第1期2013卷 1-10页

作者： Freeborn, Todd J. Maundy, Brent Elwakil, Ahmed Univ Calgary Dept Elect & Comp Engn Calgary AB T2N 1N4 Canada Univ Sharjah Dept Elect & Comp Engn Sharjah U Arab Emirates

We propose the use of a fractional order capacitor and fractional order inductor with orders 0 <= alpha, beta <= 1, respectively, in a fractional RL beta C alpha series circuit to realize fractional-step lowpass, highpass, bandpass, and bandreject filters. MATLAB simulations of lowpass and highpass responses having orders of (alpha + beta) = 1.1, 1.5, and 1.9 and bandpass and bandreject responses having orders of 1.5 and 1.9 are given as examples. PSPICE simulations of 1.1, 1.5, and 1.9 order lowpass and 1.0 and 1.4 order bandreject filters using approximated fractional order capacitors and fractional order inductors verify the implementations.

关键词： LOWPASS electric filters COMPUTER simulation simulation program with integrated circuit emphasis NUMERICAL analysis CAPACITORS

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Investigation of analog charge multiplexing schemes for SiPM based PET block detectors

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PHYSICS IN MEDICINE AND BIOLOGY 2013年第11期58卷 3943-3964页

作者： Downie, Evan Yang, Xin Peng, Hao McMaster Univ Sch Biomed Engn Hamilton ON Canada McMaster Univ Dept Med Phys & Appl Radiat Sci Hamilton ON Canada McMaster Univ Dept Elect & Comp Engn Hamilton ON Canada

Reducing the number of output channels in pixelated positron emission tomography (PET) detectors is an effective way to minimize cost and complexity while minimizing the impact on detector performance. This paper compares the system performance of two multiplexing schemes by using both simulation and experimental studies, with respect to spatial, time and energy resolutions. simulations were performed using the SPICE environment to investigate differences in resulting flood histograms and rising edge slopes. Experiments were performed using lutetium-yttrium oxyorthosilicate (LYSO) crystals coupled to a SensL ArraySL-4 silicon photomultiplier (SiPM) connected to interchangeable circuit boards containing the two multiplexing schemes of interest. Three crystal configurations were tested: a single crystal element (3 x 3 x 20 mm(3)), 2 x 2 array (crystal pitch: 3 x 3 x 20 mm(3)) and 6 x 6 array (crystal pitch: 2.1 x 2.1 x 20 mm(3)). Good agreement was found between the simulations and experiment results. It is found that the capacitive multiplexing is able to achieve an improved time resolution of good uniformity (average of 1.11 +/- 0.01 ns and 1.90 +/- 0.03 ns for the arrays, respectively) and crystal separation, compared to the resistive multiplexing (average of 1.95 +/- 0.03 ns and 3.33 +/- 0.10 ns). On the other hand, the resistive multiplexing demonstrates slightly improved energy resolution (11 +/- 0.1% and 22 +/- 0.6%, compared to 12 +/- 0.1% and 24 +/- 0.4% for the capacitive array), which is believed to be caused by the RC circuit formed between the splitting capacitors and the input impedance of amplifiers. The relevancy of this work to the PET block detector design using SiPM arrays is also discussed, including light sharing, edge compression and gain variation among SiPM pixels.

关键词： EMISSION tomography DETECTORS -- Design & construction simulation program with integrated circuit emphasis PHOTOMULTIPLIERS SINGLE crystals MAGNETIC fields AVALANCHE photodiodes

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SPICE circuit model of voltage excitation fluxgate sensor

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IET SCIENCE MEASUREMENT & TECHNOLOGY 2013年第3期7卷 145-150页

作者： Yang, Shanglin Liu, Shibin Feng, Wenguang Guo, Bo Hou, Xiaowei Li, Juping Northwestern Polytech Univ Sch Elect & Informat Xian 710129 Peoples R China

A simulation program with integrated circuit emphasis (SPICE) circuit model of voltage excitation fluxgate was proposed. It used the arctangent function to describe the hysteresis loop of fluxgate core, the excitation and measurement coils of the fluxgate were equivalent to a circuit model that contains a kind of non-linear time-varying inductance. Moreover, the expression of non-linear time-varying inductance has been given, which resolved fluxgate modelling itself into solving non-homogeneous ordinary differential equations with variable coefficient, and then the authors used HSPICE to solve the differential equations. The input and output characteristics of the dual-core fluxgate were simulated by this SPICE model. The results show that the model can better simulate the input and output characteristics of actual fluxgate, which verifies the validity of the model.

关键词： simulation program with integrated circuit emphasis HYSTERESIS loop ELECTRIC inductance ARCTANGENT function MAGNETIC cores

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circuit analysis of the memristive stateful implication gate

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ELECTRONICS LETTERS 2013年第20期49卷 1282-U68页

作者： Fang, Xudong Tang, Yuhua Natl Univ Def Technol Sch Comp State Key Lab High Performance Comp Changsha 410073 Hunan Peoples R China Natl Univ Def Technol Sch Comp Dept Comp Sci & Technol Changsha 410073 Hunan Peoples R China

A recently published memristive stateful implication (IMP) gate circuit is analysed with confirmation that it cannot achieve the full resistance switching of the output memristor in case both input memristors of the I... 详细信息

关键词： ELECTRIC circuit analysis MEMRISTORS LOGIC circuits simulation program with integrated circuit emphasis ELECTRIC resistance

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Analysis of the UIS behavior of power devices by means of SPICE-based electrothermal simulations

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MICROELECTRONICS RELIABILITY 2013年第9-11期53卷 1713-1718页

作者： d'Alessandro, Vincenzo Magnani, Alessandro Riccio, Michele Iwahashi, Yohei Breglio, Giovanni Rinaldi, Niccolo Irace, Andrea Univ Naples Federico II Dept Elect Engn & Informat Technol I-80125 Naples Italy Toyota Motor Co Toyota Aichi 4700309 Japan

This paper presents an accurate, yet computationally effective, 3-D simulation strategy devised for the UIS analysis of multicellular power transistors, which accounts for electrothermal effects and is based on a circuit representation of the whole device under test. The approach is exploited to examine the correlation between the shape of the avalanche curve of IGBTs and the physical mechanisms occurring during UIS discharging. In particular, an in-depth investigation is performed on a current hopping phenomenon that - although not usually destructive - entails a reduction in both ruggedness and reliability of the device. (C) 2013 Elsevier Ltd. All rights reserved.

关键词： INSULATED gate bipolar transistors COMPUTER simulation THERMAL analysis CURRENT distribution ELECTRIC circuits SWITCHING circuits simulation program with integrated circuit emphasis

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New soft-switching current source converter for photovoltaic power system

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ELECTRICAL ENGINEERING 2004年第5期86卷 285-291页

作者： Han, BM Kim, HJ Baek, ST Myongji Univ Sch Elect & Informat Control Engn Yongin 449728 South Korea

This paper proposes a soft-switching CSI for a photovoltaic power system which has an H-type switched-capacitor module composed of two semiconductor switches, two diodes and an L-C resonant circuit. The operation of the proposed system was analyzed using a theoretical approach with equivalent circuits and verified by computer simulations using a simulation program with integrated circuit emphasis and experimental work with a hardware prototype. The proposed system could be effectively applied to the power converter of a photovoltaic power system interconnected with an a.c. power system.

关键词： soft switching current source inverter photovoltaic system pulse width modulation insulated-gate bipolar transistor simulation program with integrated circuit emphasis

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Avoid clipping in emitter follower with accoupled resistive load

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Electronic Design 2015年第5期63卷 48-50页

作者： Rysin, Alex Design engineer who holds an MSEE from the Moscow University of Electronics and Mathematics (MIEM)

The article offers the author's insights on the use of alternating current (AC)-coupled resistive load to avoid clipping distortion of the output signal in the emitter follower. Topics include the occurrence of Vcc when a large input signal exceeds 0.7 V, the use of PSpice transient analysis of the circuit, and the need for IE_MIN to exceed more than zero to avoid clipping.

关键词： EMITTER-coupled logic circuits LIMITER circuits ALTERNATING currents RESISTIVE force SIGNAL processing simulation program with integrated circuit emphasis

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A capacitor-grounded current-tunable current mode all-pass network

A capacitor-grounded current-tunable current mode all-pass n...

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IEEE Region 10 Conference on Analog and Digital Techniques in Electrical Engineering

作者： Kumngern, M Sampattavanich, P Prommee, P Dejhan, K King Mongkuts Inst Technol Ladkrabang Fac Engn Bangkok 10520 Thailand

ISBN: (纸本)0780385608

A first-order current-mode all-pass section (CMAPS) using two current-controlled conveyors (CCCII) and a grounded capacitor are presented The current-mode first order section consists of one single-output CCCII, one dual-output CCCII and one grounded capacitor. The circuit operation in current mode;and it can be directly employed as a subsystem of monolithic circuit. PSpice simulation results are carried out in order to verify the theory.

关键词： conveyors capacitors all-pass filters electric current control SPICE monolithic integrated circuits capacitor grounding current-mode all-pass filters current-controlled conveyors monolithic circuit simulation program with integrated circuit emphasis PSpice simulation

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