Extraction of the Contact Resistance of Carbon Nanotube Field Effect Transistors Using the Bias Extrapolation Method and Statistical Measurements

作     者：Zhang, Yuming Hartmann, Martin Hermann, Sascha Yang, Tao Zhang, Yong Schroeter, Michael 

作者机构：Univ Elect Sci & Technol China Sch Elect Sci & Engn Chengdu 611731 Sichuan Peoples R China Tech Univ Chemnitz Ctr Microtechnol D-09126 Chemnitz Germany Tech Univ Chemnitz Res Ctr Mat Architectures & Integrat Nanomembrane D-09126 Chemnitz Germany Tech Univ Dresden Chair Elect Devices & Integrated Circuits CEDIC D-01069 Dresden Germany 

出 版 物：《IEEE TRANSACTIONS ON ELECTRON DEVICES》 (IEEE Trans. Electron Devices)

年 卷 期：2023年第70卷第11期

页      面：6057-6063页

核心收录：

学科分类：0808[工学-电气工程] 08[工学] 0702[理学-物理学] 

基　　金：Deutsche Forschungsgemeinschaft (DFG) [SCHR695/23] National Natural Science Foundation of China [62171105, 62271110] China Scholarship Council 

主　　题：Carbon nanotube field effect transistors (CNTFETs) contact resistance 

摘      要：Carbon nanotubes (CNTs) offer great potential for both high-integration digital and high-frequency applications due to their unique 1-D carrier transport properties. However, the typically large contact resistance between the source/drain metal and the metal-covered CNT prevents the advantages of CNTs from being exploited. For supporting process development toward lowering the contact resistance and also compact modeling of CNT field-effect transistors (CNTFETs), a method for extracting the contact resistance is proposed. By measuring at sufficiently high gate voltages and subsequent suitable extrapolation toward infinite gate voltage, the bias-dependent components of the total channel resistance can be eliminated to extract the contact resistance. The accuracy of the proposed method was first verified using device simulation and subsequently applied to fabricated CNTFETs. The proposed method is suitable for both single- and multitube CNTFETs as well as for capturing the statistical variation of the contact resistance across the wafer.