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作者机构:Key Laboratory of Advanced Display and System Application Department of Materials Science Shanghai University Shanghai 201800 China
出 版 物:《Guangdianzi Jiguang/Journal of Optoelectronics Laser》 (Guangdianzi Jiguang)
年 卷 期:2007年第18卷第8期
页 面:893-895页
核心收录:
主 题:Organic light emitting diodes (OLED)
摘 要:A blue organic light emitting diode (OLED) with a graded junction (GJ) at hole transporting layer (HTL) and emitted layer (EML) interface was constructed. Compared with the conventional heterojunction (HJ) OLED, GJ OLED exhibited significantly improved stability, and the half lifetime achieved 6998 h at initial luminance 100 cd/m2, which is more than 6 times longer than that of HJ OLED. And a Gaq thin layer is inserted in the TBADN/Alq interface, the step barrier from Alq Gaq to TBADN for electron injection is though formed. The GJ devices with Gaq layer show 20% higher efficiency than that of conventional and 7 times longer lifetime than that of HJ one.