Phase change memory programming circuit with improved speed

作     者：Xinyu Yang Yu Lei Qiuyao Yu Qian Wang Houpeng Chen Zhitang Song 

作者机构：State Key Laboratory of Materials for Integrated CircuitsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghaiChina Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijingChina 

出 版 物：《Moore and More》 (超越摩尔(英文))

年 卷 期：2025年第2卷第1期

页      面：42-52页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

基　　金：supported by the National Key R&D Program of China under Grants 2023YFB4404500,2023YFB4502903,2023YFB4502202,and 2022ZD0117602 the National Natural Science Foundation of China under Grants 92164302,62274170,62204251,and 62174168 the Youth Innovation Promotion Association CAS under Grant 2022233 the Strategic Priority Research Program of the Chinese Academy of Sciences under Grants XDB44010200 and XDB06700300 the Science and Technology Council of Shanghai under Grants 23XD1404700,23JC1400900,and 22DZ2229009 the Shanghai Rising-Star Program under Grant 24QA2711200 the Autonomous Deployment Project of the State Key Laboratory of Materials for Integrated Circuits under Grant NKLJC-Z2023-B04 National Key R&D Program of China,2023YFB4404500,Zhitang Song,2023YFB4502903,Zhitang Song,2023YFB4502202,Zhitang Song,2022ZD0117602,Zhitang Song National Natural Science Foundation of China,62274170,Yu Lei,92164302,Zhitang Song,62204251,Zhitang Song,62174168,Zhitang Song Youth Innovation Promotion Association of the Chinese Academy of Sciences,2022233,Yu Lei Strategic Priority Research Program of the Chinese Academy of Sciences,XDB44010200,Zhitang Song,XDB06700300,Zhitang Song Science and Technology Council of Shanghai,23XD1404700,Zhitang Song,23JC1400900,Zhitang Song,22DZ2229009,Zhitang Song Autonomous deployment project of State Key Laboratory of Materials for Integrated Circuits,NKLJC-Z2023-B04,Yu Lei 

主　　题：Programming circuit Improved speed Rise time Circuit design Phase change memory 

摘      要：Phase change memory(PCM)is considered one of the most promising next-generation non-volatile memory types for storage-class memory due to its many advantages,including ultrafast programming,long data retention,high storage density,low power consumption,and compatibility with standard CMOS ***,in conventional PCM programming circuits,the first programming operation after power-on suffers from a slow rise time in the programming pulse due to the lack of bias voltage pre-charging in the current source circuit,which leads to reduced consistency in the programming of phase change *** this study,we developed two solutions to address the issue associated with conventional PCM pro-gramming *** also analyzed conventional programming circuit schemes and designed a PCM programming circuit with improved speed using the SMIC 40 nm CMOS *** results demonstrated that compared with conventional programming circuits,the PCM programming circuit with improved speed reduced the rise time of SET pulses from 29.6 ns to 7.3 ns and the rise time of RESET pulses from 13.6 ns to 3.1 *** addition,it improved the consistency of the program-ming phase change cells and reduced the power consumption from 11.93 mW to 10.35 mW.