Phase change memory(PCM)is considered one of the most promising next-generation non-volatile memory types for storage-class memory due to its many advantages,including ultrafast programming,long data retention,high st...
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Phase change memory(PCM)is considered one of the most promising next-generation non-volatile memory types for storage-class memory due to its many advantages,including ultrafast programming,long data retention,high storage density,low power consumption,and compatibility with standard CMOS ***,in conventional PCM programming circuits,the first programming operation after power-on suffers from a slow rise time in the programming pulse due to the lack of bias voltage pre-charging in the current source circuit,which leads to reduced consistency in the programming of phase change *** this study,we developed two solutions to address the issue associated with conventional PCM pro-gramming *** also analyzed conventional programming circuit schemes and designed a PCM programming circuit with improved speed using the SMIC 40 nm CMOS *** results demonstrated that compared with conventional programming circuits,the PCM programming circuit with improved speed reduced the rise time of SET pulses from 29.6 ns to 7.3 ns and the rise time of RESET pulses from 13.6 ns to 3.1 *** addition,it improved the consistency of the program-ming phase change cells and reduced the power consumption from 11.93 mW to 10.35 mW.
Taking into account the need to use different values of the liquid rate and in same case of work width, this paper present presents the method of design and realization of a circuit for the selection and appointment o...
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ISBN:
(纸本)9786197105377
Taking into account the need to use different values of the liquid rate and in same case of work width, this paper present presents the method of design and realization of a circuit for the selection and appointment of those two work parameters. In accordance with the principle of operation of the electronic system for automatic correlation of liquid flow with displacement velocity the electronic scheme of such a circuit has been achieved, which can make a selection and easy programming of the two work parameters. The implementation of such a circuit in the functional scheme of the electronic adjusting system for automatic correlation of liquid flow with displacement velocity enabled tracking and fixing the technical and performance characteristics of the equipment, in accordance with the principle of operation.
Ferroelectric Tunnel Junction (FTJ) is an emerging non-volatile memory technology with increasing applications in storage and computing. The low programming energy of these devices make them an excellent candidate for...
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ISBN:
(纸本)9798331517663;9798331517670
Ferroelectric Tunnel Junction (FTJ) is an emerging non-volatile memory technology with increasing applications in storage and computing. The low programming energy of these devices make them an excellent candidate for low-power and power constrained applications. The multi-bit capability of these devices is exploited for Matrix Vector Multiplication in memory. To program the FTJ devices to multiple states, on-chip READ and WRITE circuits are necessary. In this work, we first present the programming circuit for multi-bit FTJ. Our circuit is able to generate pulse of two different amplitude from the input pulse and apply them across the FTJ. The READ circuit is able to convert the polarization state of the FTJ (which is represented in pA currents) to a CMOS-compatible voltage. The presented circuit occupies low area in addition to being energy-efficient. The presented circuits can be adapted for other NVMs and has a strong potential to find immense application in In-Memory Computing.
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