Multi-gate non-volatile memories with nanowires as charge storage material

作     者：Tsui, Bing-Yue Wang, Pei-Yu Chen, Ting-Yeh Cheng, Jung-Chien 

作者机构：Natl Chiao Tung Univ Dept Elect Engn Hsinchu 300 Taiwan Natl Chiao Tung Univ Inst Elect Hsinchu 300 Taiwan 

出 版 物：《MICROELECTRONICS RELIABILITY》 (微电子学可靠性)

年 卷 期：2010年第50卷第5期

页      面：603-606页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：National Science Council  NSC 

主　　题：GATE array circuits COMPUTER storage devices NANOWIRES ELECTRIC charge & distribution SIMULATION methods & models COMPUTER programming MICROELECTRONICS 

摘      要：Multi-gate non-volatile memory (NVM) cell is a promising approach in the next generation. In this work, the performance of NVMs using nanocrystals (NCs) and nanowires (NWs) as charge trapping materials were evaluated by three-dimensional simulation. It is found that the NWs located at different positions have different charge injection speeds. And the NW density will strongly affect the charge injection efficiency. The NW at channel center can result in large memory window and acceptable channel controllability. Although the total charges injected into NWs is lower than that injected into NCs under the same programming condition, using NWs as charge trapping material exhibits larger memory window and better channel controllability. It is suggested that the NW is a better choice than NC to be charge storage material from the perspective of memory performance. (C) 2010 Elsevier Ltd. All rights reserved.