INFN-FBK developments of 3D sensors for High-Luminosity LHC

作     者：Oide, H. Alimonti, G. Boscardin, M. Dalla Betta, G. -F. Darbo, G. Ficorella, F. Fumagalli, E. Gariano, G. Gaudiello, A. Gemme, C. Meschini, M. Messineo, A. Mendicino, R. Ronchin, S. Rovani, A. Ruscino, E. Sultan, D. M. S. Zorzi, N. Vazquez Furelos, D. 

作者机构：INFN Sez Genova Genoa Italy INFN Sez Milano Milan Italy FBK Trento Italy TIFPA INFN Trento Italy Univ Trento Trento Italy Univ Genoa Genoa Italy Univ Pisa Pisa Italy INFN Sez Firenze Florence Italy IFAE Barcelona Barcelona Spain Univ Geneva Geneva Switzerland 

出 版 物：《NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT》 (物理学研究中的核仪器与方法，A辑：加速器，分光仪，检测器和相关设备)

年 卷 期：2019年第924卷

页      面：73-77页

核心收录：

学科分类：08[工学] 0804[工学-仪器科学与技术] 0827[工学-核科学与技术] 0702[理学-物理学] 

基　　金：Innovation program  Italy 

主　　题：HL-LHC Silicon pixel detector 3D sensors FBK INFN RD53 

摘      要：3D type of pixel sensors is a promising option for the innermost pixel layer at the High-Luminosity LHC. However, the required very high hit-rate capabilities, finer pixel granularity, extreme radiation hardness and reduced material budget call for a downscale of the pixel size as compared to existing 3D sensors, involving smaller pitch (e.g. 50 x 50 or 25 x 100 mu m(2)), shorter inter-electrode spacing (similar to 30 mu m), narrower electrodes (similar to 6 mu m diameter), and reduced active thickness (similar to 100-150 mu m). Within a joint R&D effort with INFN, FBK has produced a new generation of 3D pixel sensors with these challenging features. In this talk preliminary results from the electrical and functional characterisation of the first prototypes are reported, included their behaviour after large radiation fluence, close to the ones expected in the High Luminosity LHC environment. Prospects for the next prototypes are also presented.