Normally-Off AlGaN/GaN-On-Si Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistor with Nitrogen-Incorporated Silicon Oxide Gate Insulator

作     者：Roh, Seung-Hyun Eom, Su-Keun Choi, Gwang-Ho Kang, Myoung-Jin Kim, Dong-Hwan Hwang, Il-Hwan Seo, Kwang-Seok Lee, Jae-Gil Byun, Young-Chul Cha, Ho-Young 

作者机构：Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea Univ Texas Dallas Dept Mat Sci & Engn Richardson TX 75080 USA Hongik Univ Sch Elect & Elect Engn Seoul 04066 South Korea 

出 版 物：《JOURNAL OF THE KOREAN PHYSICAL SOCIETY》 (韩国物理学会志)

年 卷 期：2017年第71卷第4期

页      面：185-190页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

基　　金：Brain Korea 21 Plus Project Nano Material Technology Development Program through the National Research Foundation of Korea grant - Korean Government [2012M3A7B4035145] Basic Science Research Program - Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea [2015R1A6A1A03031833] R& D Program for Industrial Core Technology - Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea 

主　　题：AlGaN/GaN Normally-off Atomic layer deposition SiOxNy 

摘      要：We have developed a nitrogen-incorporated silicon oxide (SiOxNy) deposition process using plasma enhanced atomic layer deposition (PEALD) for the gate insulator of recessed-gate Al-GaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors. The SiOxNy film deposited on a recessed GaN surface exhibited a breakdown field of 13.2 MV/cm and a conduction band offset of 3.37 eV, which are the highest values reported for GaN MIS structures to the best of our knowledge. The fabricated normally-off transistor exhibited very promising characteristics such as a threshold voltage of 2.2 V, a maximum drain current density of 428 mA/mm, and a breakdown voltage of 928 V.