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Precision etching for multi-level AlGaAs waveguides

作     者:Liao, Zhongfa Aitchison, J. Stewart 

作者机构:Univ Toronto Edward S Rogers Sr Dept Elect & Comp Engn 10 Kings Coll Rd Toronto ON M5S 3G4 Canada 

出 版 物:《OPTICAL MATERIALS EXPRESS》 (Opt. Mater. Express)

年 卷 期:2017年第7卷第3期

页      面:895-903页

核心收录:

学科分类:070207[理学-光学] 07[理学] 08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0803[工学-光学工程] 0702[理学-物理学] 

基  金:Applied Science in Photonics and Innovative Research in Engineering (ASPIRE) Natural Sciences and Engineering Council (NSERC) Collaborative Research and Training Experience (CREATE) program of Canada CMC Microsystems through the MNT program 

主  题:Material properties Nonlinear optical signal processing Photonic integration Quantum optics Waveguides Wavelength division multiplexing 

摘      要:We present inductively-coupled-plasma, reactive-ion-etching (ICP-RIE) techniques with 2 orders of magnitude difference in etch rates, for the AlxGa1-xAs material system. These precise etching processes are used to produce waveguides in a multi-guide vertical integration (MGVI) AlxGa1-xAs chip. The MGVI AlxGa1-xAs chip vertically integrates multiple guiding layers that usually have different material properties. The fabrication of these chips requires precise and anisotropic etching. The first etching recipe used BCl3 and achieved an etch rate of 0.25 nm/s while the second one used Cl-2/N-2 gases and achieved an etch rate of more than 20 nm/s. Simple AlxGa1-xAs nanowaveguides of 800 nm width were fabricated using these recipes. We measured a propagation loss of 6.7 dB/cm at the wavelength of 850 nm. (C) 2017 Optical Society of America

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