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1Tbit/s demultiplexing using low temperature grown InGaAs/InAlAs multiple quantum wells

用低温度的 1 Tbit/s demultiplexing 成年 InGaAs/InAlAs 多重量井

作     者:Kobayashi, H Takahashi, R Matsuoka, Y Iwamura, H 

作者机构:NTT Optoelect Labs Atsugi Kanagawa 24301 Japan 

出 版 物:《ELECTRONICS LETTERS》 (电子学快报)

年 卷 期:1998年第34卷第9期

页      面:908-910页

核心收录:

学科分类:0808[工学-电气工程] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 

主  题:aluminium compounds multiple quantum wells III-V semiconductors 1.55 micrometre indium compounds Optical communication low temperature growth optical switches optical fibres semiconductor quantum wells gallium arsenide InGaAs-InAlAs 1.05 Tbit/s fibre-based experiment surface reflection all-optical AND gate switch signal pulses Fibre optics demultiplexing Photonic switching systems 390 fs optical communication equipment demultiplexing equipment Optical logic devices and optical computing techniques contrast ratio response time LOTOS optical switching/sampling modules 

摘      要:The authors present an optical switching/optical sampling module operating in the 1.5 mu m band using ultrafast all-optical AND gates made with low temperature grown InGaAs/InAlAs multiple quantum wells. The module achieves a response time of 390fs with a contrast ratio of 25 in a fibre-based experiment. Using the modules, all-optical demultiplexing is demonstrated for signal pulses corresponding to 1.05Tbit/s, and the demultiplexed optical pulses are clearly detected.

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