Sub-threshold behavior of long channel undoped cylindrical surrounding-gate MOSFETs

作     者：Bian, Wei He, Jin Zhang, Lining Zhang, Jian Chan, Mansun 

作者机构：Peking Univ Minist Educ Key Lab Microelect Device & Circuits TSRC Beijing 100871 Peoples R China Peking Univ Shenzhen Grad Sch Key Lab Integrated Microsyst Shenzhen 518055 Peoples R China Hong Kong Univ Sci & Technol Dept Elect & Comp Engn Kowloon Hong Kong Peoples R China 

出 版 物：《MICROELECTRONICS RELIABILITY》 (微电子学可靠性)

年 卷 期：2009年第49卷第8期

页      面：897-903页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：Nature Science Funds of China 

主　　题：METAL oxide semiconductor field-effect transistors GATE array circuits RADIUS (Anatomy) TEMPERATURE SILICON ELECTRIC potential MICROELECTRONICS 

摘      要：This paper reported the sub-threshold behavior of long channel undoped surrounding-gate (SRG) MOSFETs with respect to body radius. Based on a rigorous channel potential model presented in this work, the ideal room temperature subthreshold slope of 60 mV/dec can only be achieved when the silicon body radius is smaller than a critical value. With larger silicon body radius, SRG MOSFETs display a dual subthreshold slope of 60 mV/dec and 120 mV/dec. Based on the complex subthreshold characteristics, a new definition of threshold voltage together with an extraction method is adopted to investigate threshold voltage characteristics of undoped SRG MOSFETs in this paper. (C) 2009 Elsevier Ltd. All rights reserved.