Comparison of total dose effects on a voltage reference fabricated on bonded-wafer and polysilicon dielectric isolation

作     者：Krieg, JF Neerman, CJ Savage, MW Titus, JL Emily, D Dunham, GW Van Vonno, N Swonger, J 

作者机构：NAVSEA Surface Warfare Ctr Div Crane IN 47522 USA Intersil Corp Melbourne FL 32905 USA 

出 版 物：《IEEE TRANSACTIONS ON NUCLEAR SCIENCE》 

年 卷 期：2000年第47卷第6期

页      面：2561-2567页

核心收录：

学科分类：0808[工学-电气工程] 08[工学] 0827[工学-核科学与技术] 

主　　题：GATE array circuits BIPOLAR transistors DOSE-response relationship (Radiation) 

摘      要：Voltage reference devices, fabricated with two different starting materials, were used as a test vehicle to compare the total dose response of polysilicon dielectric-isolation (Poly-DI) and bonded-wafer version s of a Radiation Hard Silicon Gate (RSG) BiCMOS process. Parts were exposed at 50, 10, and 0.08 rd(Si)/s.