Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices

作     者：武唯康 安霞 谭斐 冯慧 陈叶华 刘静静 张兴 黄如 

作者机构：Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2015年第36卷第11期

页      面：39-43页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0827[工学-核科学与技术] 082701[工学-核能科学与工程] 

主　　题：heavy ion displacement damages PDSOI performance degradation 

摘      要：The effects of the physical damages induced by heavy ion irradiation on the performance of partiallydepleted SOI devices are experimentally investigated. After heavy ion exposure, different degradation phenomena are observed due to the random strike of heavy ions. A decrease of the saturation current and transconductance,and an enhanced gate-induced drain leakage current are observed, which are mainly attributed to the displacement damages that may be located in the channel, the depletion region of the drain/body junction or the gate-to-drain overlap region. Further, PDSOI devices with and without body contact are compared, which reveals the differences in the threshold voltage shift, the drain-induced barrier lowing effect, the transconductance and the kink effect. The results may provide a guideline for radiation hardened design.