An adaptive simulation framework for AMS-RF test quality

作     者：Gutierrez, Valentin Leger, Gildas 

作者机构：Univ Seville Inst Microlectron Sevilla CSIC Av Amer Vespucio 28 Seville 41092 Spain 

出 版 物：《INTEGRATION-THE VLSI JOURNAL》 (集成；超大规模集成电路杂志)

年 卷 期：2020年第73卷

页      面：10-17页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：Spanish Government project StatSET [RTI2018098513-B-I00] FEDER, European Union program University of Seville, Spain [VIPPIT-2018-II.2] 

主　　题：AMS-RF test Defect simulation Test evaluation Fault escape Defect coverage 

摘      要：Ensuring the quality of a circuit implies ensuring the quality of test. Despite the fact that performance-based testing has been the golden standard for Analog, Mixed-Signal and RF test for decades, high-reliability markets like automotive have found that functional test leaves some potential defects undetected that can produce infield failure. There is thus a push towards defect-oriented testing which, in turn, calls for an efficient defect simulation framework. This paper presents a statistical adaptive defect simulation based on likelihood-weighted random sampling to evaluate the quality of AMS-RF tests in terms of defect coverage and fault escape. The adaptive loop takes a decision at each new defect simulation on whether it is more efficient to assess the defect coverage or the fault escape rate of the test under evaluation, as a function of the desired targets for these two metrics. Several decision criteria are proposed and validated by simulation of a complete IC for different tests.