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bipolar/bicmos circuits and technology meeting

作者： Deixler, P Rodriguez, A De Boer, W Sun, H Colclaser, R Bower, D Bell, N Yao, A Brock, R Bouttement, Y Hurkx, GAM Tiemeijer, LF Paasschens, JCJ Huizing, HGA Hartskeerl, DMH Agarwal, P Magnee, PHC Aksen, E Slotboom, JW Philips RF Device Modeling Grp San Jose CA USA

ISBN: (纸本)0780386183

QUBiC4X is a cost-effective ultra-high-speed SiGe:C RF-bicmos technology for emerging microwave applications with NPN f(T)/f(max) up to 130/140GHz, enhanced RF-oriented 2.5V CMOS, SiGe:C Power Amplifiers with 88% power-added efficiency, distinguished substrate isolation, full suite of elite high-density passives, 5 metal layers and an advanced design flow.

关键词： CMOS integrated circuits

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LDMOSFET and SiGe:C HBT integrated in a 0.25μm bicmos technology for RF-PA applications.

LDMOSFET and SiGe:C HBT integrated in a 0.25μm BiCMOS techn...

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bipolar/bicmos circuits and technology meeting

作者： Muller, D Giry, A Arnaud, C Arricastres, C Sommet, R Szelag, B Monroy, A Pache, D STMicroelect Ctr Commun Microelect Crolles F-38921 Crolles France

An optimized LDMOSFET and a SiGe:C HBT for PA design integrated in a bicmos technology are described in this article. Each device interest for PA application is highlighted via their electrical performances -static, s... 详细信息

ISBN: (纸本)0780386183

关键词： MOSFET devices

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An experimental study on substrate coupling in bipolar/bicmos technologies

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IEEE JOURNAL OF SOLID-STATE circuits 2004年第10期39卷 1755-1763页

作者： Pfost, M Brenner, P Huttner, T Romanyuk, A Infineon Technol AG D-81541 Munich Germany Univ Basel Inst Phys CH-4056 Basel Switzerland

The parasitic influence of the substrate can lead to a significant performance degradation of advanced high-speed and RF circuits. Hence, a careful circuit layout is necessary, and shielding measures such as guard rings must usually be applied. However, this might not be sufficient for high-performance circuits. Moreover, such measures often lead to an increased chip size. Therefore, not only the layout but also the technology itself should be optimized to suppress substrate coupling as much as possible. In this work, different technology-related options such as high-resistivity and SOI substrates, transistor isolation techniques, and shielding methods are investigated. Their influence on substrate coupling is determined up to 50 GHz by measurements of special test structures. The observed behavior is thoroughly explained so that guidelines for technology development and circuit design can be derived. This paper focuses primarily on RF and high-speed lCs fabricated in advanced bipolar or bicmos technologies using p(-) substrates, although the results apply also to (RF-)CMOS circuits with such substrate materials.

关键词： bicmos technology optimization crosstalk reduction shielding substrate coupling substrate crosstalk

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The effect of deep trench and sub-collector on the latchup robustness in bicmos silicon germanium technology

The effect of deep trench and sub-collector on the latchup r...

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Proceedings of the 2004 IEEE bipolar/bicmos circuits and technology meeting

作者： Watson, Anne Voldman, Steven H. Pennsylvania State University State College PA University of Vermont Burlington VT IBM Microelectronics Essex Junction VT 05452

This paper demonstrates the influence and improvement of deep trench (DT) isolation, and bipolar sub-collector on CMOS latchup in a 0.13μm CMOS-base 200/285 GHz (fT/fMAX) SiGe HBT technology. © 2004 IEEE.

关键词： CMOS integrated circuits

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Advances in SiGe HBT bicmos technology

Advances in SiGe HBT BiCMOS technology

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Topical meeting on Silicon Monolithic Intergrated circuits in RF Systems

作者： Joseph, A Lanzerotti, L Liu, X Sheridan, D Johnson, J Liu, Q Dunn, J Rieh, JS Harame, D IBM Corp Microelect Div Semicond Res & Dev Ctr Essex Jct VT 05452 USA

ISBN: (纸本)0780387031

Silicon Germanium (SiGe) Heterojunction bipolar Transistor (HBT) bicmos technology has established a strong foothold in the communication marketplace by offering a cost competitive solution for myriad of products. SiGe bicmos technologies currently address various applications ranging from 0.9 - 77 GHz. At the heart of this success is the ease of integration of a high performance SiGe HBT with the state-of-the-art CMOS and passive elements. Here, we present the advances in SiGe bicmos technologies and an outlook of future challenges and opportunities.

关键词： SiGeHBT bipolar bicmos technologies

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An experimental study on substrate coupling in bipolar/bicmos technologies

An experimental study on substrate coupling in bipolar/BiCMO...

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bipolar/bicmos circuits and technology meeting

作者： Pfost, M Brenner, P Huttner, T Romanyuk, A Infineon Technol AG D-81541 Munich Germany Univ Basel Inst Phys CH-4056 Basel Switzerland

关键词： bicmos technology optimization crosstalk reduction shielding substrate coupling substrate crosstalk

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A wideband fully integrated 0.25μm bicmos 5GHz medium power amplifier

A wideband fully integrated 0.25μm BiCMOS 5GHz medium power...

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bipolar/bicmos circuits and technology meeting

作者： Vaiana, M Gramegna, G Paparo, M STMicroelectronics I-95121 Catania Italy

ISBN: (纸本)0780386183

A wideband 4.2GHz-5.6GHz balanced Medium Power Amplifier has been designed in a 0.25Rm SiGe:C bipolar process. The two stage amplifier is housed in a VFQFPN20 package with integrated input/output matching networks and onboard printed rat-race baluns. A saturated output power of 16dBm has been measured with a small signal gain of 15.2dB at 5GHz with a total current consumption of 110mA from a 2AV supply voltage at ambient temperature. The measured 3dB bandwidth is 1.4GRz, the best value ever reported in literature for a fully integrated medium PA housed in a standard package for mass production with no external components required for input/output matching. The die size is 1.4x1.750 mm(2).

关键词： Power amplifiers

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A 675 μW 5 GHz low-voltage bicmos synchronized ring oscillator based prescaler

A 675 μW 5 GHz low-voltage BiCMOS synchronized ring oscilla...

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Proceedings of the 2004 IEEE bipolar/bicmos circuits and technology meeting

作者： Mazouffre, Olivier Lapuyade, Hervé Bégueret, Jean-Baptiste Cathelin, Andreia Belot, Didier Deval, Yann IXL Laboratory Université Bordeaux 1 Talence France STMicroelectronics Central R and D Crolles France

This paper presents the design and the experimental measurements of a 5 GHz divide-by-4 prescaler for 802.11a and HiperLAN2 applications. The presented circuit is implemented in a 0.25μm bicmos SiGe process from STMicroelectronics. The prescaler is optimized for low power operation. It uses a Synchronized Ring Oscillator architecture based on two low-voltage differential bipolar latches with PMOS loads. The prescaler draws 520 μA from a 1.3 V power supply, its operating frequency is from 4.7 GHz to 6.8 GHz with a sensitivity of -10 dBm, and its efficiency is about 10 GHz/mW. © 2004 IEEE.

关键词： CMOS integrated circuits

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Circuit applications of high-performance SiGe:C HBTs integrated in bicmos technology

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APPLIED SURFACE SCIENCE 2004年第1-4期224卷 297-305页

作者： Winkler, W Borngräber, J Heinemann, B Rücker, H Barth, R Bauer, J Bolze, D Drews, J Ehwald, KE Grabolla, T Haak, U Höppner, W Knoll, D Krüger, D Kuck, B Kurps, R Marschmeyer, M Richter, H Schley, P Schmidt, D Scholz, R Tillack, B Wolansky, D Wulf, HE Yamamoto, Y Zaumseil, P IHP D-15236 Frankfurt Germany

Carbon-doped SiGe (SiGe:C) bipolar devices have been developed and integrated in to a 0.25 mum CMOS platform. The resulting SiGe:C bicmos technology offers a wide spectrum of active and passive devices for wireless and wired communication systems. A high-performance variant of the bipolar transistor has been derived from the standard transistors by reduction of some transistor dimensions. With these alterations, f(T) and f(max) of the bipolar transistors reaches 120 and 140 GHz, respectively. Circuit applications of the devices are demonstrated. Static and dynamic divider circuits have a maximum input frequency of 62 and 72 GHz, respectively. Integrated LC oscillators with frequencies up to 60 GHz are also demonstrated. (C) 2003 Elsevier B.V. All rights reserved.

关键词： SiGe : C bicmos technology integrated circuit divider oscillator millimeter-wave

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Differential distributed amplifier and oscillator in SiGe bicmos using close-packed interleaved on-chip transmission lines

Differential distributed amplifier and oscillator in SiGe Bi...

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Proceedings of the 2004 IEEE bipolar/bicmos circuits and technology meeting

作者： Guckenberger, Drew Kornegay, Kevin T. Cornell Broadband Commun. Res. Lab. Cornell University Ithaca NY 14853 United States

A monolithic differential distributed amplifier using close-packed, shielded, meandered transmission lines and a delay-matched rotationally symmetric amplifier cell is implemented using a SiGe bicmos process with an fT of 120GHz. A broadband differential power gain of 7.5dB is achieved with a bandwidth of 25GHz, while consuming 30mA from a 3.3V supply. The amplifier can also be configured as a differential oscillator by connecting the input and output pads with wire bonds. This results in an oscillation frequency of 9.2GHz with a phase noise of -103dBc/Hz at a 1MHz offset and single-ended output power of -6dBm. © 2004 IEEE.

关键词： CMOS integrated circuits

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