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Characterization of the transient behavior of gated/STI diodes and their associated BJT in the CDM time domain

MICROELECTRONICS RELIABILITY 2009年第12期49卷 1424-1432页

作者： Manouvrier, Jean-Robert Fonteneau, Pascal Legrand, Charles-Alexandre Nouet, Pascal Azais, Florence STMicroclectronics F-38926 Crolles France Univ Montpellier 2 LIRMM CNRS F-34392 Montpellier 5 France

A measurement setup for the characterization of very-fast transient responses in the CDM time domain is described in this paper. Experimental results are demonstrated on STI and gated diodes with a guard ring in a 65 nm and 130 nm CMOS technology. The superior behavior of gated diodes during triggering is highlighted. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.

关键词： DIODES TIME-domain analysis COMPLEMENTARY metal oxide semiconductors BIPOLAR transistors gate array circuits TRANSIENTS (Dynamics)

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A NOR-AND quantum running gate molecule

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CHEMICAL PHYSICS LETTERS 2009年第1-3期472卷 74-79页

作者： Renaud, N. Ito, M. Shangguan, W. Saeys, M. Hliwa, M. Joachim, C. Ctr Elaborat Mat & Etud Struct CNRS Nanosci Grp F-31055 Toulouse France Fujitsu Labs Ltd Nanotechnol Res Ctr Atsugi Kanagawa 2430197 Japan Natl Univ Singapore Dept Chem & Biomol Engn Singapore 117576 Singapore Univ Hassan II Mohammedia Fac Sci Ben Msik Casablanca Morocco Inst Mat Res & Engn Singapore 117602 Singapore

A [1,5]-dinitro-anthracene molecule performs a NOR or AND digital logic function depending of the polarity of the bias voltage applied to the molecule. Its design is based on the fact that a quantum system can demonstrate a Boolean like dependent Rabi oscillation frequency while this frequency is controlled by well unidentified parameters of its Hamiltonian therefore used as logic inputs for the logic gate. This quantum Hamiltonian computing (QHC) approach permits a systematic design of quantum driven classical logic gates whose quantum structure can be mapped on the electron pi system of a polyaromatic molecule. The output of such molecule logic gate is encoded in the tunnelling current I passing through the board of the molecule. Supposed to be interconnected to two semi-infinite metallic atomic wires, our NOR (AND) dinitro-anthracene molecule presents a two orders of magnitude difference between its logic levels '1' and '0' as demonstrated by calculating its full low current I(theta(1), theta(2)) logic surface where theta(1) and theta(2) are the NO2 conformation angles encoding for a classical '0' or '1' logic input on the molecule. (C) 2009 Elsevier B. V. All rights reserved.

关键词： gate array circuits MOLECULES ANTHRACENE QUANTUM theory HAMILTONIAN systems CONFORMATIONAL analysis NANOWIRES AROMATIC compounds

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A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs

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SOLID-STATE ELECTRONICS 2009年第12期53卷 1293-1302页

作者： Palestri, P. Alexander, C. Asenov, A. Aubry-Fortuna, V. Baccarani, G. Bournel, A. Braccioli, M. Cheng, B. Dollfus, P. Esposito, A. Esseni, D. Fenouillet-Beranger, C. Fiegna, C. Fiori, G. Ghetti, A. Iannaccone, G. Martinez, A. Majkusiak, B. Monfray, S. Peikert, V. Reggiani, S. Riddet, C. Saint-Martin, J. Sangiorgi, E. Schenk, A. Selmi, L. Silvestri, L. Toniutti, P. Walczak, J. Univ Udine DIEGM IU NET I-33100 Udine Italy Univ Glasgow Glasgow Lanark Scotland Univ Bologna IU NET ARCES Bologna Italy Univ Paris Sud CNRS IEF Orsay France Univ Bologna ARCES Cesena Italy ETH CH-8092 Zurich Switzerland Numonyx R&D Technol Dev I-20041 Agrate Brianza Italy Univ Pisa IU NET Pisa Italy Warsaw Univ Technol Warsaw Poland ST Microelect Crolles France CEA MINATEC LETI F-38054 Grenoble France

In this paper we compare advanced modeling approaches for the determination of the drain current in nanoscale MOSFETs. Transport models range from drift-diffusion to direct solutions of the Boltzmann-Transport-Equation with the Monte-Carlo method. Template devices representative of 22 nm Double-gate and 32 nm Single-gate Fully-Depleted Silicon-On-Insulator transistors were used as a common benchmark to highlight the differences between the quantitative predictions of different approaches. Using the standard scattering and mobility models for unstrained silicon channels and pure SiO2 dielectrics, the predictions of the different approaches for the 32 nm template are quite similar. Simulations of the 22 nm device instead, are much less consistent, particularly those achieved with MC simulators. Comparison with experimental data for a 32 nm device shows that the modeling approach used to explain the mobility reduction induced by the high-kappa dielectric is critical. In the absence of a clear understanding of the impact of high-kappa stack on transport, different models, all providing agreement with the experimental low-field mobility, predict quite different drain currents in saturation and in the sub-threshold region. (C) 2009 Elsevier Ltd. All rights reserved.

关键词： COMPARATIVE studies TRANSPORT theory (Mathematics) NANOELECTRONICS METAL oxide semiconductor field-effect transistors MONTE Carlo method gate array circuits SILICON-on-insulator technology ELECTRON scattering ELECTRON mobility

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Low-power hybrid complementary metal-oxide-semiconductor-nano-electro-mechanical systems field programmable gate array: circuit level analysis and defect-aware mapping

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IET COMPUTERS AND DIGITAL TECHNIQUES 2009年第6期3卷 609-624页

作者： Chakraborty, R. S. Paul, S. Zhou, Y. Bhunia, S. Case Western Reserve Univ Dept Elect Engn & Comp Sci Cleveland OH 44106 USA

Conventional programmable fabric implemented in nanoscale complementary metal-oxide-semiconductor (CMOS) technologies suffer from large leakage power dissipation and volatility of the storage cells, which require reconfiguration at each power-on. In this study, the authors present a hybrid field programmable gate array design approach that can leverage on carbon nanotube (CNT)-based nano-electro-mechanical systems (NEMS) switches to implement memory elements leading to significant saving in static power dissipation. Besides, because of the nonvolatile nature of the CNT-NEMS switches, the proposed framework eliminates the requirement of reconfiguration on start-up. To implement the programmable interconnects, the authors propose two alternative structures leveraging on non-volatile CNT-NEMS switches. To overcome the high defect density of a nano-fabric, the authors also propose a novel application mapping technique that can take advantage of certain defects modelled as stuck-at faults in the lookup tables (LUTs), thus considerably improving the yield. Simulations show that the proposed CMOS-NEMS LUT-based circuits can achieve an average reduction of 90% in leakage power at iso-performance, compared to the conventional CMOS-based LUT circuits. The proposed defect-aware mapping achieves an average improvement of 87% in the number of mapped functions over conventional mapping for 10% defect rate.

关键词： COMPLEMENTARY metal oxide semiconductors FIELD programmable gate arrays gate array circuits PROGRAMMABLE logic devices SEMICONDUCTOR industry

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The evolving landscape of DIGITAL SIGNAL PROCESSING

EDN

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EDN 2009年第23期54卷 19-23页

作者： Cravotta, Robert

The article discusses the trend involving digital signal-processing (DSP) technology. A comparison of the functionalities of field-programmable gate arrays (FPGA) and DSP is presented. The evolution of DSP from being a complex structure is highlighted. Tools needed to help transitional challenges between algorithm development and implementation are also discussed.

关键词： Algorithms Integrated circuits Digital signal processing Field programmable gate arrays gate array circuits

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Piecewise linear implementation of nonlinear dynamical systems: from theory to practice

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ELECTRONICS LETTERS 2009年第19期45卷 966-967页

作者： Poggi, T. Sciutto, A. Storace, M. Univ Genoa Dept Biophys & Elect Engn I-16145 Genoa Italy

It is shown how to implement by a mixed-signal circuit a continuous-time dynamical system. The chosen case study is the Hindmarsh-Rose model of a biological neuron, but the design strategy can be applied to a large class of continuous-time nonlinear dynamical systems. The system nonlinearities are first approximated by using piecewise-linear functions and then digitally implemented on a field programmable gate array. The linear part of the system is completely analogue and is implemented by using operational amplifiers. Measurement results show that the circuit can reproduce the main dynamics of a biologically plausible neuron.

关键词： Integrated circuits Neurons Nonlinear systems gate array circuits Electronic amplifiers

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A fast, direct x-ray detection charge-coupled device

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REVIEW OF SCIENTIFIC INSTRUMENTS 2009年第8期80卷 083302-083302-5页

作者： Denes, P. Doering, D. Padmore, H. A. Walder, J. -P. Weizeorick, J. Univ Calif Berkeley Lawrence Berkeley Lab Div Engn Berkeley CA 94720 USA Univ Calif Berkeley Lawrence Berkeley Lab Adv Light Source Div Berkeley CA 94720 USA Argonne Natl Lab Adv Photon Source Xray Sci Div Argonne IL 60439 USA

A charge-coupled device (CCD) capable of 200 Mpixels/s readout has been designed and fabricated on thick, high-resistivity silicon. The CCDs, up to 600 mu m thick, are fully depleted, ensuring good infrared to x-ray detection efficiency, together with a small point spread function. High readout speed, with good analog performance, is obtained by the use of a large number of parallel output ports. A set of companion 16-channel custom readout integrated circuits, capable of 15 bits of dynamic range, is used to read out the CCD. A gate array-controlled back end data acquisition system frames and transfers images, as well as provides the CCD clocks. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3187222]

关键词： CHARGE coupled devices DETECTORS IMAGE converters X-ray equipment gate array circuits INTEGRATED circuits

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Sub-threshold behavior of long channel undoped cylindrical surrounding-gate MOSFETs

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MICROELECTRONICS RELIABILITY 2009年第8期49卷 897-903页

作者： Bian, Wei He, Jin Zhang, Lining Zhang, Jian Chan, Mansun Peking Univ Minist Educ Key Lab Microelect Device & Circuits TSRC Beijing 100871 Peoples R China Peking Univ Shenzhen Grad Sch Key Lab Integrated Microsyst Shenzhen 518055 Peoples R China Hong Kong Univ Sci & Technol Dept Elect & Comp Engn Kowloon Hong Kong Peoples R China

This paper reported the sub-threshold behavior of long channel undoped surrounding-gate (SRG) MOSFETs with respect to body radius. Based on a rigorous channel potential model presented in this work, the ideal room temperature subthreshold slope of 60 mV/dec can only be achieved when the silicon body radius is smaller than a critical value. With larger silicon body radius, SRG MOSFETs display a dual subthreshold slope of 60 mV/dec and 120 mV/dec. Based on the complex subthreshold characteristics, a new definition of threshold voltage together with an extraction method is adopted to investigate threshold voltage characteristics of undoped SRG MOSFETs in this paper. (C) 2009 Elsevier Ltd. All rights reserved.

关键词： METAL oxide semiconductor field-effect transistors gate array circuits RADIUS (Anatomy) TEMPERATURE SILICON ELECTRIC potential MICROELECTRONICS

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Photocurrent Imaging and Efficient Photon Detection in a Graphene Transistor

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NANO LETTERS 2009年第3期9卷 1039-1044页

作者： Xia, Fengnian Mueller, Thomas Golizadeh-Mojarad, Roksana Freitag, Marcus Lin, Yu-Ming Tsang, James Perebeinos, Vasili Avouris, Phaedon IBM Corp Thomas J Watson Res Ctr Yorktown Hts NY 10598 USA Purdue Univ Sch Elect & Comp Engn W Lafayette IN 47906 USA

We measure the channel potential of a graphene transistor using a scanning photocurrent imaging technique. We show that at a certain gate bias, the impact of the metal on the channel potential profile extends into the channel for more than one-third of the total channel length from both source and drain sides;hence, most of the channel is affected by the metal. The potential barrier between the metal-controlled graphene and bulk graphene channel Is also measured at various gate biases. As the gate bias exceeds the Dirac point voltage, V(Dirac), the original p-type graphene channel turns Into a p-n-p channel. When light Is focused on the p-n junctions, an impressive external responsivity of 0.001 A/W is achieved, given that only a single layer of atoms are Involved in photon detection.

关键词： PHOTON detectors IMAGING systems TRANSISTORS GRAPHENE SEMICONDUCTOR junctions gate array circuits PHOTOELECTRICITY POTENTIAL barrier

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Quantum learning by measurement and feedback

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NEW JOURNAL OF PHYSICS 2009年第3期11卷 033017 (11-033017 (11页

作者： Gammelmark, S. Molmer, K. Univ Aarhus Lundbeck Fdn Theoret Ctr Quantum Syst Res Dept Phys & Astron DK-8000 Aarhus C Denmark

We investigate an approach to quantum computing in which quantum gate strengths are parametrized by quantum degrees of freedom. The capability of the quantum computer to perform desired tasks is monitored by measurements of the output and gradually improved by successive feedback modifications of the coupling strength parameters. Our proposal uses only information available in an experimental implementation and is demonstrated with simulations on search and factoring algorithms.

关键词： QUANTUM computers FEEDBACK (Electronics) gate array circuits SIMULATION methods & models COMPUTER simulation

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