检索结果-内蒙古大学图书馆

Three Microwave Frequency Dividers Using Current Source/Sink and Modified Current Source Inverters

ACTIVE AND PASSIVE ELECTRONIC COMPONENTS 2013年第1期2013卷 1-11页

作者： Harinarayan, Gautham Srinivasulu, Avireni Freescale Semicond Pvt Ltd Analog Mixed Signal Team Noida 201301 India Technol & Res Univ Vignans Fdn Sci Dept Elect & Commun Engn Guntur 522213 India

In a preceding paper Carlos E. Saavedra, 2005, established that frequency division can be achieved with the use of inverter rings and transmission gates. In this paper, we suggest three modified circuits which obtain the similar function, namely, using Current Sink Inverter, Current Source Inverter, and Modified Current Source Inverter. The performances of the proposed circuits are examined using Cadence and the model parameters of a 45 nm CMOS process. The simulation results of the three circuits are presented and are compared. We also present the results of a simple but effective novel technique to reduce clock skew between real and complementary clock signals and the corresponding improvement achieved in maximum frequency of operation. One of the proposed circuits can operate at up to 8.2 GHz input while performing a divide-by-4 operation.

关键词： FREQUENCY dividers ELECTRIC current converters gate array circuits PERFORMANCE evaluation PARAMETER estimation SIMULATION methods & models

来源：评论

学校读者我要写书评

暂无评论

Usage and Limitation of Standard Mobility Models for TCAD Simulation of Nanoscaled FD-SOI MOSFETs

引用

ACTIVE AND PASSIVE ELECTRONIC COMPONENTS 2015年第1期2015卷 1-9页

作者： Ciprut, A. Chelly, A. Karsenty, A. Univ Rochester Fac Elect & Comp Engn Rochester NY 14627 USA Bar Ilan Univ Fac Engn IL-52900 Ramat Gan Israel Jerusalem Coll Technol Dept Appl Phys Fac Engn IL-91160 Jerusalem Israel

TCAD tools have been largely improved in the last decades in order to support both process and device complementary simulations which are usually based on continuously developed models following the technology progress. In this paper, we compare between experimental and TCAD simulated results of two kinds of nanoscale devices: ultrathin body (UTB) and nanoscale Body (NSB) SOI-MOSFET devices, sharing the same W/L ratio but having a channel thickness ratio of 10:1 (46 nm and 4.6 nm, resp.). The experimental transfer I-V characteristics were found to be surprisingly different by several orders of magnitude. We analyzed this result by considering the severe mobility degradation and the influence of a large gate voltage dependent series resistance (R-SD). TCAD tools do not usually consider R-SD to be either channel thickness or gate voltage dependent. After observing a clear discrepancy between the mobility values extracted from our measurements and those modeled by the available TCAD models, we propose a new semiempirical approach to model the transfer characteristics.

关键词： METAL oxide semiconductor field-effect transistors gate array circuits ELECTRIC potential COMPUTER-aided design COMPUTER simulation NANOELECTROMECHANICAL systems MATHEMATICAL models

来源：评论

学校读者我要写书评

暂无评论

Local spectroscopy of moiré-induced electronic structure in gate-tunable twisted bilayer graphene

引用

Physical Review B 2015年第15期92卷 155409-155409页

作者： Dillon Wong (黃家和) Yang Wang (汪洋) Jeil Jung (정재일) Sergio Pezzini Ashley M. DaSilva Hsin-Zon Tsai Han Sae Jung Ramin Khajeh Youngkyou Kim (김영규) Juwon Lee (이주원) Salman Kahn (成吉思汗) Sajjad Tollabimazraehno Haider Rasool Kenji Watanabe Takashi Taniguchi Alex Zettl Shaffique Adam Allan H. MacDonald Michael F. Crommie Department of Physics University of California at Berkeley Berkeley California 94720 USA Materials Science Division Lawrence Berkeley National Laboratory Berkeley California 94720 USA Department of Physics University of Seoul Seoul 130-743 Korea Department of Physics University of Texas at Austin Austin Texas 78712 USA Physics Department National University of Singapore 117551 Singapore Dipartimento di Fisica Università degli studi di Pavia I-27100 Pavia Italy Department of Chemistry University of California at Berkeley Berkeley California 94720 USA Department of Chemical and Biomolecular Engineering University of California at Berkeley Berkeley California 94720 USA Johannes Kepler University Linz 4040 Linz Austria National Institute for Materials Science Tsukuba Ibaraki 305-0044 Japan Yale-NUS College 138614 Singapore

Twisted bilayer graphene (tBLG) forms a quasicrystal whose structural and electronic properties depend on the angle of rotation between its layers. Here, we present a scanning tunneling microscopy study of gate-tunable tBLG devices supported by atomically smooth and chemically inert hexagonal boron nitride (BN). The high quality of these tBLG devices allows identification of coexisting moiré patterns and moiré super-superlattices produced by graphene-graphene and graphene-BN interlayer interactions. Furthermore, we examine additional tBLG spectroscopic features in the local density of states beyond the first van Hove singularity. Our experimental data are explained by a theory of moiré bands that incorporates ab initio calculations and confirms the strongly nonperturbative character of tBLG interlayer coupling in the small twist-angle regime.

关键词： ELECTRONIC structure gate array circuits BILAYERS (Solid state physics) GRAPHENE QUASICRYSTALS SCANNING tunneling microscopy BORON nitride SPECTRUM analysis

来源：评论

学校读者我要写书评

暂无评论

Hybrid topological-spin qubit systems for two-qubit-spin gates

引用

Physical Review B 2012年第10期86卷 104511-104511页

作者： Martin Leijnse Karsten Flensberg Center for Quantum Devices Niels Bohr Institute University of Copenhagen 2100 Copenhagen Ø Denmark

We investigate a hybrid quantum system involving spin qubits, based on the spins of electrons confined in quantum dots, and topological qubits, based on Majorana fermions. In such a system, gated control of the charge on the quantum dots allows transfer of quantum information between the spin and topological qubits, and the topological system can be used to facilitate transfer of spin qubits between spatially separated quantum dots and to initialize entangled spin-qubit pairs. Here, we show that the coupling to the topological system also makes it possible to perform entangling two-qubit gates on spatially separated spin qubits. The two-qubit gates are based on a combination of topologically protected braiding operations, gate-controlled charge transfer between the dots and edge Majorana modes, and measurements of the state of the topological qubits.

关键词： NUCLEAR spin QUBITS gate array circuits QUANTUM theory QUANTUM dots QUANTUM entanglement CHARGE transfer

来源：评论

学校读者我要写书评

暂无评论

Driven superconducting proximity effect in interacting quantum dots

引用

Physical Review B 2012年第9期85卷 094518-094518页

作者： Ali G. Moghaddam Michele Governale Jürgen König Theoretische Physik Universität Duisburg-Essen and CeNIDE 47048 Duisburg Germany School of Physical and Chemical Sciences and MacDiarmid Institute for Advanced Materials and Nanotechnology Victoria University of Wellington Wellington 6140 New Zealand

We present a theory of nonequilibrium superconducting proximity effect in an interacting quantum dot induced by a time-dependent tunnel coupling between the dot and a superconducting lead. The proximity effect, which is established when the driving frequency fulfills a gate-voltage-dependent resonance condition, can be probed through the tunneling current into a weakly coupled normal lead. Furthermore, we propose to generate and manipulate coherent superpositions of quantum-dot states with electron numbers differing by two by applying pulsed oscillatory variations to the couplings between the dot and superconductors.

关键词： SUPERCONDUCTIVITY QUANTUM dots TUNNELING (Physics) RADIO frequency gate array circuits SUPERPOSITION principle (Physics) COHERENT states

来源：评论

学校读者我要写书评

暂无评论

gate-voltage controlled electronic transport through a ferromagnet/normal/ferromagnet junction on the surface of a topological insulator

引用

Physical Review B 2012年第17期86卷 174416-174416页

作者： Kun-Hua Zhang Zheng-Chuan Wang Qing-Rong Zheng Gang Su Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory School of Physics University of Chinese Academy of Sciences Beijing 100049 China

We investigate the electronic transport properties of a ferromagnet/normal/ferromagnet junction on the surface of a topological insulator with a gate voltage exerted on the normal segment. It is found that the conductance oscillates with the width of normal segment and gate voltage, and the maximum of conductance gradually decreases while the minimum of conductance approaches zero as the width increases. The conductance can be controlled by tuning the gate voltage like a spin field-effect transistor. It is found that the magnetoresistance ratio can be very large, and can also be negative owing to anomalous transport. In addition, when there exists a magnetization component in the surface plane, it is shown that only the component parallel to the junction interface has an influence on the conductance.

关键词： gate array circuits VOLTAGE-controlled oscillators ELECTRONIC structure CHARGE transfer FIELD-effect transistors FERROMAGNETISM SEMICONDUCTOR junctions SURFACES (Technology) ELECTRIC insulators & insulation MAGNETORESISTANCE

来源：评论

学校读者我要写书评

暂无评论

Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in gate-Recessed Nanoscale SOI MOSFETs

引用

ACTIVE AND PASSIVE ELECTRONIC COMPONENTS 2013年第1期2013卷 1-10页

作者： Karsenty, A. Chelly, A. Jerusalem Coll Technol Fac Engn IL-91160 Jerusalem Israel Bar Ilan Univ Fac Engn IL-52900 Ramat Gan Israel

Ultrathin body (UTB) and nanoscale body (NSB) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46 nm and lower than 5 nm, respectively, were fabricated using a selective "gate-recessed" process on the same silicon wafer. Their current-voltage characteristics measured at room temperature were found to be surprisingly different by several orders of magnitude. We analyzed this result by considering the severe mobility degradation and the influence of a huge series resistance and found that the last one seems more coherent. Then the electrical characteristics of the NSB can be analytically derived by integrating a gate voltage-dependent drain source series resistance. In this paper, the influence of the channel thickness on the series resistance is reported for the first time. This influence is integrated to the analytical model in order to describe the trends of the saturation current with the channel thickness. This modeling approach may be useful to interpret anomalous electrical behavior of other nanodevices in which series resistance and/or mobility degradation is of a great concern.

关键词： ELECTRIC resistance SERIES electric circuits gate array circuits METAL oxide semiconductor field-effect transistors SILICON wafers CHARGE carrier mobility SILICON-on-insulator technology

来源：评论

学校读者我要写书评

暂无评论

Electronic compressibility of layer-polarized bilayer graphene

引用

Physical Review B 2012年第23期85卷 235458-235458页

作者： A. F. Young C. R. Dean I. Meric S. Sorgenfrei H. Ren K. Watanabe T. Taniguchi J. Hone K. L. Shepard P. Kim Department of Physics Columbia University New York New York 10027 USA Department of Electrical Engineering Columbia University New York New York 10027 USA Department of Mechanical Engineering Columbia University New York New York 10027 USA Advanced Materials Laboratory National Institute for Materials Science 1-1 Namiki Tsukuba 305-0044 Japan

We report on a capacitance study of dual gated bilayer graphene. The measured capacitance allows us to probe the electronic compressibility as a function of carrier density, temperature, and applied perpendicular electrical displacement D¯. As a band gap is induced with increasing D¯, the compressibility minimum at charge neutrality becomes deeper but remains finite, suggesting the presence of localized states within the energy gap. Temperature dependent capacitance measurements show that compressibility is sensitive to the intrinsic band gap. For large displacements, an additional peak appears in the compressibility as a function of density, corresponding to the presence of a one-dimensional van Hove singularity (vHs) at the band edge arising from the quartic bilayer graphene band structure. For D¯>0, the additional peak is observed only for electrons, while for D¯<0 the peak appears only for holes. This asymmetry can be understood in terms of the finite interlayer separation and may be useful as a direct probe of the layer polarization.

关键词： COMPRESSION testing of materials POLARIZATION (Electricity) GRAPHENE ELECTRIC capacity gate array circuits ELECTRON distribution TEMPERATURE effect ENERGY gaps (Physics)

来源：评论

学校读者我要写书评

暂无评论

Building a high quality photogate

引用

Physics Education 2019年第1期54卷 015006-015006页

作者： Ladino, L.A. Rondón, S.H. Departmento de Ciencias Naturales Escuela Colombiana de Ingenieria Bogotá Colombia Departmento de Matemáticas Escuela Colombiana de Ingenieria Bogotá Colombia

In this paper we present a method to construct a simple, sturdy and inexpensive photogate to be used in elementary physics laboratories. The great advantage of the proposed design is that it has no transmitter-receiver alignment related problem at all and the receiver is nicely encapsulated which prevents any spurious light triggering the photogate electrical circuit. The design can be easily modified to build larger photogates than those currently on the market. © 2018 IOP Publishing Ltd.

关键词： gate array circuits PHOTODETECTORS PHYSICS laboratories ELEMENTARY education

来源：评论

学校读者我要写书评

暂无评论

A Programmable Receiver for Communication Systems and Its Application to Impulse Radio

引用

JOURNAL OF ELECTRICAL AND COMPUTER ENGINEERING 2009年第unknown期2009卷 1-5页

作者： Merz, Roman Botteron, Cyril Chastellain, Frederic Farine, Pierre-Andre Univ Neuchatel CH-2000 Neuchatel Switzerland EPFL Elect & Signal Proc Lab CH-2000 Neuchatel Switzerland

The design of a programmable receiver for an ultra wideband (UWB) communication is presented. The receiver is using a fast analog to digital converter (ADC) and a field programmable gate array (FPGA) allowing a rapid performance evaluation for various system architectures and signal processing algorithms. To demonstrate the performance and the versatility of the receiver, a simple communication system and a localization system are implemented. The accuracy of the latter is presented for an indoor environment. Copyright (C) 2009 Roman Merz et al.

关键词： BROADBAND communication systems DIGITAL-to-analog converters FIELD programmable gate arrays PROGRAMMABLE logic devices gate array circuits SIGNAL processing -- Digital techniques DIGITAL communications LINE receivers (Integrated circuits) DIGITAL electric filters

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：