检索结果-内蒙古大学图书馆

Compact Si JFET model for cryogenic temperature

CRYOGENICS 2020年 108卷

作者： Petrosyants, Konstantin O. Ismail-zade, Mamed R. Sambursky, Lev M. Natl Res Univ Higher Sch Econ Moscow Inst Elect & Math Moscow Russia Russian Acad Sci Inst Design Problems Microelect Moscow Russia

Compact Si JFET model for SPICE circuit simulation in the extended temperature range from 373 K down to 73 K (+100 degrees C...-200 degrees C) is proposed. It is based on the standard JFET model Level = 3 (Statz model) with the full set of temperature-dependent parameters in the cryogenic temperature range. The universal procedure for model parameter extraction from I-V-characteristic measurement data at low temperature is developed. The simulation error does not exceed 10-15% in the temperature range 373 K.73 K. The JFET Low-T model is implemented in the form of a subcircuit and tested in popular SPICE-like circuit simulators: HSPICE, LTSpice, ADS, and OrCAD.

关键词： JFET transistors Cryogenic temperature Low-temperature effects Compact transistor models model parameter extraction experimental I-V characteristics Spice-like circuit simulators

来源：评论

学校读者我要写书评

暂无评论

Radiation-Induced Fault Simulation of SOI/SOS CMOS LSI's Using Universal Rad-SPICE MOSFET model

引用

JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS 2017年第1期33卷 37-51页

作者： Petrosyants, Konstantin O. Sambursky, Lev M. Kharitonov, Igor A. Lvov, Boris G. Natl Res Univ Higher Sch Econ Dept Elect Engn Moscow Inst Elect & Math Moscow Russia Russian Acad Sci Dept Analog Circuits Design Automat Inst Design Problems Microelect Moscow Russia

The methodology of modeling and simulation of environmentally induced faults in radiation hardened SOI/SOS CMOS IC's is presented. It is realized at three levels: CMOS devices - typical analog or digital circuit fragments - complete IC's. For this purpose, a universal compact SOI/SOS MOSFET model for SPICE simulation software with account for TID, dose rate and single event effects is developed. The model parameters extraction procedure is described in great depth taking into consideration radiation effects and peculiarities of novel radiation-hardened (RH) SOI/SOS MOS structures. Examples of radiation-induced fault simulation in analog and digital SOI/SOS CMOS LSI's are presented for different types of radiation influence. The simulation results show the difference with experimental data not larger than 10-20% for all types of radiation.

关键词： SOI CMOS circuits Fault modeling and simulation Radiation hardness TID Dose rate Single events Compact SPICE models Novel RH SOI MOS structures model parameter extraction

来源：评论

学校读者我要写书评

暂无评论

A simple, direct and reliable extraction method applied to GaN devices

引用

INTERNATIONAL JOURNAL OF ELECTRONICS 2017年第3期104卷 382-393页

作者： Jarndal, Anwar Kompa, Guenter Univ Sharjah Dept Elect & Comp Engn Sharjah U Arab Emirates Univ Kassel Dept Microwave Elect Kassel Germany

In this article, a simple, direct and reliable extraction method has been developed and applied to different sizes of Gallium Nitride (GaN) high electron mobility transistors (HEMTs). Instead of high-voltage gate-forward measurements with risk of device damage, the proposed approach uses only uncritical cold S-parameters at pinch-off (V-GSextraction procedure is validated by small- and large-signal measurements. Very good agreement is obtained. Scaling of parasitic elements with the device size is confirmed.

关键词： GaN high electron mobility transistor small-signal modelling large-signal modelling model parameter extraction

来源：评论

学校读者我要写书评

暂无评论

Hardware-Software System for Automation of Characteristics Measurement of SOI CMOS VLSI Elements under Extreme High Temperature Conditions (up to 300°C)

Hardware-Software System for Automation of Characteristics M...

引用

IEEE Russia Section Young Researchers in Electrical and Electronic Engineering Conference (EIConRus)

作者： Ismail-zade, Mamed R. Romanov, Aleksandr Y. Kuzin, Egor Y. Danykin, Vladimir S. Chetverikov, Igor A. Natl Res Univ Higher Sch Econ Moscow Inst Elect & Math Moscow Russia

ISBN: (纸本)9781509048656

Hardware-software system designed for automated SOI MOSFETs characteristics measurement, processing and SPICE model parameter extraction taking into account high temperature (HT) effects (to 300 degrees C) is presented. The essence of the system is comprised of a set of selected measurement instruments, measurement and data processing methods with the purpose of SPICE model library creation in lightly manned conditions. This capability to program measurement conditions and data collection, processing and saving is realized with in-house LabVIEW virtual instruments.

关键词： high-temperature electronics SOI MOSFETs test structures measurement measurement automation Spice models model parameter extraction CAD systems

来源：评论

学校读者我要写书评

暂无评论

Fault Simulation in Radiation-Hardened SOI CMOS VLSIs using Universal Compact MOSFET model 17

Fault Simulation in Radiation-Hardened SOI CMOS VLSIs using ...

引用

17th IEEE Latin-American Test Symposium (LATS)

作者： Petrosyants, Konstantin O. Sambursky, Lev M. Kharitonov, Igor A. Lvov, Boris G. Natl Res Univ Higher Sch Econ Moscow Inst Elect & Math Dept Elect Engn Moscow Russia Russian Acad Sci Inst Design Problems Microelect Dept Analog Circuits Design Automat Moscow Russia

ISBN: (纸本)9781509013319

The methodology of modeling and simulation of environmentally induced faults in radiation hardened SOI CMOS ICs is presented. For this purpose, the universal compact SPICE SOI MOSFET model with account for TID, dose rate and single event effects is used. First, the model parameters extraction procedure is described in more details taking into consideration radiation effects and peculiarities of novel radiation-hardened (RH) SOI MOS structures. The results of analog and digital SOI CMOS circuits simulation show the difference with experimental data not more than 10-20% for all types of radiation.

关键词： SOI CMOS circuits fault modeling and simulation radiation hardness TID dose rate single events compact SPICE models novel RH SOI MOS structures model parameter extraction

来源：评论

学校读者我要写书评

暂无评论

Complex for Automated Measurement and Processing of BJTs and MOSFETs Characteristics for Extremal Applications

Complex for Automated Measurement and Processing of BJTs and...

引用

International Siberian Conference on Control and Communications (SIBCON)

作者： Petrosyants, Konstantin O. Kharitonov, Igor A. Sambursky, Lev M. Ismail-zade, Mamed R. Natl Res Univ Higher Sch Econ Moscow Inst Elect & Math Moscow Russia Russian Acad Sci Inst Design Problems Microelect Dept Analog Circuits Design Automat Moscow Zelenograd Russia

ISBN: (纸本)9781467383837

The paper describes the features of an automated system for measurement and processing of electrical characteristics of BJTs and MOS transistors in the presence of thermal and radiation effects. Automation is made possible with employing of long measurement cables and a ramified scripting system. The system is based on a set of measuring instruments, methods of measurements and processing of results for transistors of various types. Shown are the examples of the system usage for studying BJTs and MOSFETs, determining the SPICE-model parameters.

关键词： BJTs MOSFETs radiation effects test structures measurement measurement automation Spice-models model parameter extraction

来源：评论

学校读者我要写书评

暂无评论

Complex for Automated Measurement and Processing of BJTs and MOSFETs Characteristics for Extremal Applications

Complex for Automated Measurement and Processing of BJTs and...

引用

International Siberian Conference on Control and Communications

作者： Konstantin O. Petrosyants Igor A. Kharitonov Lev M. Sambursky Mamed R. Ismail-zade Moscow Institute of Electronics and Mathematics National Research University "Higher School of Economics" Moscow Russia

ISBN: (纸本)9781467383844

关键词： BJTs MOSFETs radiation effects test structures measurement measurement automation Spice-models model parameter extraction

来源：评论

学校读者我要写书评

暂无评论

SPICE model of thyristors with amplifying gate and emitter-shorts

引用

IET POWER ELECTRONICS 2014年第3期7卷 724-735页

作者： Zekry, Abdelhalim A. Sayah, Gihan Taha Soliman, Fouad A. Ain Shams Univ Fac Engn Dept Commun & Elect Cairo Egypt Nucl Mat Author Dept Elect Engn Cairo Egypt

In this work, a new SPICE model is developed for power thyristors, which contains amplifying gate and emitter-shorts. This model is based on the two-dimensional two-transistor circuit model of a thyristor. The authors use Gummel-Poon circuit model that takes into consideration the high injection effects and the conductivity modulation of the low n-doped region. The model parameters are defined and extracted according to a new methodology. The simulation results are compared with experimental measurements. It has been found that the developed model satisfactorily describes the performance of the thyristor under practical operating conditions.

关键词： conductivity modulation SPICE semiconductor device models injection effects Power semiconductor devices thyristors amplifying gate model parameter extraction power thyristors two-dimensional two-transistor circuit model emitter-shorts Semiconductor device modelling, equivalent circuits, design and testing semiconductor doping Gummel-Poon circuit model SPICE model Thyristors and silicon controlled rectifiers power semiconductor devices low n-doped region

来源：评论

学校读者我要写书评

暂无评论

High Voltage Charge Pump with Triple Well Diodes in a 0.13 μm Bulk CMOS Process 57

High Voltage Charge Pump with Triple Well Diodes in a 0.13 ...

引用

57th IEEE International Midwest Symposium on Circuits and Systems (MWSCAS)

作者： Sun, Jiwei Wang, Pingshan Clemson Univ Dept Elect & Comp Engn Clemson SC 29634 USA

ISBN: (纸本)9781479941322

This paper presents charge pump circuits with modified triple well diodes as charge transfer switches for charging on-chip pulse generation circuits in a low-voltage bulk CMOS process. Guard-rings and isolation deep n-wells are used to improve the breakdown voltages and reduce leakage currents of the diodes. model parameters of the triple well diode are extracted based on measured diode characteristics. These parameters are then used to analyze our charge pump. The proposed charge pump circuits are implemented in a commercial 0.13 mu m bulk CMOS process. The output voltage of the four-stage charge pump circuit can be up to 18.1 V, which is much higher than the n-well/p-substrate breakdown voltage (similar to 10 V) of the given process.

关键词： charge pump triple well diodes model parameter extraction

来源：评论

学校读者我要写书评

暂无评论

model parameter extraction for the high voltage SOI-process using BSIMSOI3 model and ICCAP

Model parameter extraction for the high voltage SOI-process ...

引用

14th International Conference on Mixed Design of Integrated Circuits and Systems

作者： Pieczynski, J. Gneiting, T. Fraunhofer Inst Microelect Circuits & Syst IMS D-4100 Duisburg Germany

ISBN: (纸本)9788392263241

This paper presents a procedure for electrical parameter extraction of high voltage SOI MOS transistors. Several types of NMOS and PMOS fully depleted SOI devices were measured and modelled in a voltage ranging up to 30V. The standard Berkeley BSIMSOI3 model with ICCAP software was applied as a basis for modelling work. In order to increase the maximum operation voltage of the MOSFETs, a number of devices were designed and fabricated with additional drain extension structures. However, this resulted in problematic parasitic effects, such as back gate control of the drain extension and drain current quasi-saturation. In order to account for these effects in the modelling procedure, special sub-circuits containing transistors, resistors and voltage sources were implemented.

关键词： BSIMSOI ICCAP model parameter extraction SOI

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：