本文采用八带有效质量理论计算了InAs—GaSb超晶格的电子结构和光学跃迁性质.在计算中,我们考虑了两种材料的有效质量参数的差异.计算了不同InAs,GaSb宽度下的超晶格的带隙,发现带隙非常依赖于价带偏移(valence band offset),而价带偏...
本文采用八带有效质量理论计算了InAs—GaSb超晶格的电子结构和光学跃迁性质.在计算中,我们考虑了两种材料的有效质量参数的差异.计算了不同InAs,GaSb宽度下的超晶格的带隙,发现带隙非常依赖于价带偏移(valence band offset),而价带偏移又依赖于界面类型和InAs,GaSb的宽度.当至少一种材料很薄时,价带偏移会大于推荐值(对于InSb界面为0.575eV).精确计算了有限温下InAs—GaSb超晶格的跃迁速率、介电常数和吸收系数,结果与实验符合的很好,给出了介电常数和吸收系数曲线中出现尖锐的峰的物理原因.这种方法可以用来设计红外和远红外探测器.
A realistic measurement setup for a system such system measured by a mesoscopie detector,is theoretically as a charged two-state （qubit） or multi-state quantum studied. To properly describe the measurement-induced b...
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A realistic measurement setup for a system such system measured by a mesoscopie detector,is theoretically as a charged two-state （qubit） or multi-state quantum studied. To properly describe the measurement-induced back-action,a detailed-balance preserved quantum master equation treatment is developed. The established framework is applicable for arbitrary voltages and temperatures.
A high performance AlAs/In0.53 Ga0.47 As/InAs resonant tunneling diode （RTD） on InP substrate is fabricated by inductively coupled plasma etching. This RTD has a peak-to-valley current ratio （PVCR） of 7. 57 and a ...
详细信息
A high performance AlAs/In0.53 Ga0.47 As/InAs resonant tunneling diode （RTD） on InP substrate is fabricated by inductively coupled plasma etching. This RTD has a peak-to-valley current ratio （PVCR） of 7. 57 and a peak current density Jp = 39.08kA/cm^2 under forward bias at room temperature. Under reverse bias, the corresponding values are 7.93 and 34.56kA/cm^2 . A resistive cutoff frequency of 18.75GHz is obtained with the effect of a parasitic probe pad and wire. The slightly asymmetrical current-voltage characteristics with a nominally symmetrical structure are also discussed.
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