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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Tao, Yong Hong Huang, Run Hua Chen, Gang Bai, Song Li, Yun Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

High voltage 4H-SiC junction barrier schottky (JBS) diode with breakdown voltage higher than 4.5 kV has been fabricated. The doping level and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The thickness of the device epilayer is 50 μm, and the doping concentration is 1.2×1015 cm-3. A floating guard rings edge termination has been used to improve the effectiveness of the edge termination technique. The diodes can block a reverse voltage of at least 4.5 kV, and the on-state current density was 80 A/cm2 at VF =4 V. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Silicon carbide

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DC magnetic field modulated doubly balanced monolithic mixer using magnetic thin film baluns

DC magnetic field modulated doubly balanced monolithic mixer...

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2012 International Conference on Microwave and Millimeter Wave technology, ICMMT 2012

作者： Li, Hui Kong, Cen Chen, Xiaojian Wang, Weibo Zhou, Jianjun Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing 210016 China

ISBN: (纸本)9781467321839

A novel DC Magnetic Field modulated doubly balanced monolithic mixer consisting of NiFe-SiOx magnetic thin film spiral transformer-baluns is presented first time. The -3dB bandwidth of the mixer from original L/S-band (1.3-3GHz) was modulated to L/C-band (1.4-5.5GHz) while a DC magnetic field was applied. Besides, the conversion loss of the mixer was improved by 1dB decreasion at the same time. The fabrication process of the mixer was fully compatible with standard monolithic microwave integrated circuit (MMIC) process. © 2012 IEEE.

关键词： Silicon compounds

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High breakdown voltage GaN HEMT device fabricated on self-standing GaN substrate

High breakdown voltage GaN HEMT device fabricated on self-st...

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Zhou, Jian Jun Li, Liang Lu, Hai Yan Kong, Ceng Kong, Yue Chan Chen, Tang Sheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHz&bullμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Aluminum gallium nitride

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Influence of the etching process on the surface morphology of 4H-SiC substrate used in the epitaxial graphene

Influence of the etching process on the surface morphology o...

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Asia-Pacific Conference on Silicon Carbide and Related Materials, APCSCRM 2018

作者： Zhao, Zhifei Li, Yun Wang, Yi Zhou, Ping Yun, Wu Li, Zhonghui Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

ISBN: (纸本)9783035713855

The morphology of the in-situ etching process on Si-face and C-face 4H-SiC, by annealing in a hydrogen environment, is studied by atomic force microscopy (AFM). The uniform step-terrace morphology of both the Si-face and C-face 4H-SiC is achieved with the assistance of carbon/silicon flux. The full width at half maximum (FWHM) of Raman 2D peak for the graphene grown on the uniform step-terrace morphology of the Si-face and C-face is 36.2 cm-1 and 22 cm-1, respectively. © 2019 Trans Tech Publications Ltd, Switzerland.

关键词： Silicon carbide

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Influence of SiH4 flow rate on GaN films with in-situ SiNx mask on sapphire surface

Influence of SiH4 flow rate on GaN films with in-situ SiNx m...

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3rd International Conference on Materials science and Manufacturing, ICMSM 2014

作者： Li, Zhong Hui Peng, Da Qing Luo, Wei Ke Li, Liang Zhang, Dong Guo Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

ISBN: (纸本)9783038350460

Sapphire substrate was treated by SiH4 under NH3 atmosphere before GaN growth and nano-size islands SiNx mask was formed on the substrate. Properties of GaN films were investigated by high resolution X-ray diffraction, photoluminescence and transmission electron microscopy. The results indicated that the SiH4 flow rate is an important factor affecting the size and density of SiNx mask besides SiH4 treatment time. The GaN films grown on the SiNx-patterned sapphire substrate revealed an epitaxial lateral overgrowth mode, which affected 3D to 2D growth time and the microstructures of GaN films. The lowest FWHM value of (102) rocking curve was 286 arcsec. as the SiH4 flow rate of 0.5sccm, with the calcultated edge-type dislocations density of 4.28×109cm-2. © (2014) Trans Tech Publications, Switzerland.

关键词： X ray diffraction

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An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate

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Journal of Semiconductors 2018年第5期39卷 54-58页

作者： Kun Ren Jiachen Zheng Haiyan Lu Jun Liu Lishu Wu Wenyong Zhou Wei Cheng Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi UniversityHangzhou 310018China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016China

This paper investigated the DC and RF performance of the In P double heterojunction bipolar transistors（DHBTs）transferred to RF CMOS wafer *** measurement results show that the maximum values of the DC current gain of a substrate transferred device had one emitter finger,of 0.8μm in width and 5μm in length,are changed unobviously,while the cut-off frequency and the maximum oscillation frequency are decreased from 220to 171 GHz and from 204 to 154 GHz,*** order to have a detailed insight on the degradation of the RF performance,small-signal models for the In P DHBT before and after substrate transferred are presented and comparably *** extracted results show that the degradation of the RF performance of the device transferred to RF CMOS wafer substrate are mainly caused by the additional introduced substrate parasitics and the increase of the capacitive parasitics induced by the substrate transfer process itself.

关键词： CMOS technology amplifier integrated circuits

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AlGaN/GaN MIS-HEMT with ultrathin barrier using PECVD SiN as passivation and gate-insulating layer 4th

AlGaN/GaN MIS-HEMT with ultrathin barrier using PECVD SiN as...

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4th International Conference on Electronics, Communications and Networks, CECNet2014

作者： Wang, Zheli Zhou, Jianjun Kong, Cen Chen, Tangsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing Jiangsu China

ISBN: (纸本)9781138028302

The Twodimensional Electron Gas density (2DEG) and electron mobility (μ) of Al0.3Ga0.7N/GaN heterostructures with a 5-nm-thick barrier increased after the deposition of 10-nm-thick SiN by Plasma Enhanced Chemical Vapor Deposition (PECVD). The SiN film worked as the passivation and gate-insulating layers. Al/Ni/Au ohmic was proposed for its good contact performance at a lower annealing temperature compared with Ti/Al/Ni/Au ohmic and the lowest specific contact resistance was 7.59 × 10-6 Ω∙cm2. The fabricated Metal Insulatingsemiconductor High Electron Mobility Transistors (MIS-HEMTs) with a gate length of 1 μm had a maximum drain current density of 624 mA/mm and a peak extrinsic transconductance of 110 mS/mm. © 2015 Taylor & Francis Group, London.

关键词： Plasma enhanced chemical vapor deposition

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Simulation, fabrication and characterization of 6500V 4H-SiC JBS diode

Simulation, fabrication and characterization of 6500V 4H-SiC...

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2013 International Conference on Mechatronics and Semiconductor Materials, ICMSCM 2013

作者： Huang, Run Hua Tao, Yong Hong Chen, Gang Bai, Song Li, Rui Li, Yun Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9783037859391

4H-SiC JBS diode with breakdown voltage higher than 6.5 kV has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper, the simulation, the fabrication, and the electrical characteristics of 4H-SiC JBS diode were reported. The drift layer thickness and doping are 55 μm and 9×1014 cm-3 respectively. 60 floating guard rings edge were fabricated as termination. The on-state voltage was 4 V at JF = 7A. © (2014) Trans Tech Publicutions, Switzerland.

关键词： Silicon carbide

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Effects of annealing parameters on epitaxial graphene on SiC substrates

Effects of annealing parameters on epitaxial graphene on SiC...

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Asia-Pacific Conference on Silicon Carbide and Related Materials, APCSCRM 2018

作者： Wang, Yi Li, Yun Zhao, Zhifei Zhou, Ping Yin, Zhijun Li, Zhonghui Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

ISBN: (纸本)9783035713855

The effects of annealing on epitaxial graphene on SiC substrates with various conditions are investigated. Results show that high pressure hydrogen atmosphere is more effective to decouple the epitaxial graphene from SiC substrate than that of a relative lower pressure process. Besides, the characteristic 2D-peak of graphene in Raman spectra disappeared with an annealing temperature 1000 °C, which means that the epitaxial graphene layer was decomposed in this condition. The study also shows that the decomposition of graphene can be effectively suppressed by increasing carbon vapor partial pressure through introducing ethylene during high pressure hydrogen annealing at 1000 °C. And the epitaxial graphene is successfully transferred to quasi free standing graphene by the annealing with an appropriate flow of ethylene. © 2019 Trans Tech Publications Ltd, Switzerland.

关键词： Ethylene

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Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates

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Nanotechnology and Precision Engineering 2020年第4期3卷 241-243页

作者： Yongle Qi Denggui Wang Jianjun Zhou Kai Zhang Yuechan Kong Suzhen Wu Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China China Electronics Technology Group Corporation No.58 Research Institute Wuxi 204035China

Commercially available AlGaN/GaN high-electron-mobility transistors(HEMTs)are beginning to enter the public scene froma range of *** on previous studies,commercial GaN-based electronics are expected to be tolerant to different types of irradiation in *** test this assumption,we compared the characteristic electrical curves obtained at different X-ray irradiation doses for GaN HEMT devices manufactured by Infineon and *** p-GaN-based device was found to be more robust with a stable threshold voltage,whereas the threshold voltage of the device with ametal-insulator-semiconductor gatewas found to shift first in the negative and then the positive *** dynamic phenomenon is caused by the releasing and trapping effects of radiation-induced charges in the dielectric layer and at the interface of irradiated *** such,the p-GaNgate-based GaN HEMT provides a promising solution for use as an electric source in space.

关键词： p-GaN gate GaN HEMTs X-ray irradiation Threshold voltage

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