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Low frequency noise in ultrathin semiconductor devices

AIP Conference Proceedings 1999年第1期466卷 151-155页

作者： Peter H. Handel Richard D. Nelson 1Department of Physics and Astronomy Univ. of Missouri St. Louis Missouri 63121 2Department of Electrical and Computer Engineering Univ. of California Irvine

Ultrathin devices have become important because they can be flexible and can be included on a plastic card. The low thickness increases the amount of surface scattering and scattering on dislocations and on other lattice defects caused by bending. This goes hand in hand with a reduction of lattice scattering, both normal and umklapp or intervalley. For ultrasmall devices, the conventional quantum 1/f effect usually determines the low-frequency noise. This effect is proportional to the squared velocity change of the current carriers which is large in lattice scattering, and particularly large in umklapp or intervalley scattering. Therefore, we expect a reduction of 1/f noise with decreasing thickness of the devices. Nevertheless, there often will be an increase in noise, due to the general 1/N dependence on the number of carriers N which define the electric current and the noise current, and due to the additional noise caused by current inhomogeneities introduced by bending-related defects. Finally, as we show in this paper, the 1/N dependence is often compensated by the presence of a coherent quantum 1/f effect vestige.

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Electromigration modeling for design rule development in microelectronic interconnects

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AIP Conference Proceedings 1999年第1期491卷 51-61页

作者： Robert J. Gleixner William K. Meyer William D. Nix 1Logic Technology Development Intel Corporation Hillsboro Oregon 97124-5503 2Department of Electrical and Computer Engineering Oregon Graduate Institute Portland Oregon 97291 3Department of Materials Science and Engineering Stanford University Stanford California 94305-2205

The use of a physically-based electromigration model as a means of validating design rules in aluminum-based microelectronic interconnects is presented. This model consider the migration of atoms through the line when driven by an applied current and mechanical stress gradients. The model is then applied to a specific interconnect geometry common to CMOS logic circuits. Here the saturation resistance in the interconnect is shown to agree well with experimental observations. The value of the effective charge (Z*) in this material is found to be −8.8. These results demonstrate the usefulness of electromigration modeling as a means of developing interconnect design rules.

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Correlation of experimental damage data for the development of the UT-MARLOWE Monte Carlo ion implant simulator

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AIP Conference Proceedings 1999年第1期475卷 836-840页

作者： M. F. Morris S. Tian Y. Chen A. Tasch S. Baumann J. F. Kirchhoff R. Hummel S. Prussin D. Kamenitsa J. Jackson 0Motorola Mesa Arizona 85202 1Avante! Fremont California 94538 2Department of Electrical and Computer Engineering University of Texas Austin Texas 78723 3Evans Texas Round Rock Texas 78681 4Charles Evans and Assoc. California 94603 5Department of Materials Science and Engineering University of Florida Gainesville Florida 32611 6Electrical Engineering Department UCLA Los Angeles California 90024 7Eaton Corporation Austin Texas 78717 8Eaton Corporation Beverly Massachusetts 01915

The Monte Carlo ion implant simulator UT-MARLOWE has usually been verified using a large array of Secondary Ion Mass Spectroscopy (SIMS) data (∼200 profiles per ion species)(1). A model has recently been developed (1) to explicitly simulate defect production, diffusion, and their interactions during the picosecond ‘defect production stage’ of ion implantation. In order to thoroughly validate this model, both SIMS and various damage measurements were obtained (primarily channeling-Rutherford Backscattering Spectroscopy, Differential Reflectometry and Tapered Groove Profilometry, but supported with SEM and XTEM data). In general, the data from the various experimental techniques was consistent, and the Kinetic Accumulation Damage Model (KADM) was developed and validated using this data. This paper discusses the gathering of damage data in conjunction with SIMS in support of the development of an ion implantation simulator.

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Electromigration failures under bidirectional current stress

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AIP Conference Proceedings 1998年第1期418卷 201-211页

作者： Jiang Tao Nathan W. Cheung Chenming Hu 1Advanced Micro Devices Sunnyvale California 94088 2Department of Electrical Engineering and Computer Sciences University of California at Berkeley California 94720

Electromigration failure under DC stress has been studied for more than 30 years, and the methodologies for accelerated DC testing and design rules have been well established in the IC industry. However, the electromigration behavior and design rules under time-varying current stress are still unclear. In CMOS circuits, as many interconnects carry pulsed-DC (local VCC and VSS lines) and bidirectional AC current (clock and signal lines), it is essential to assess the reliability of metallization systems under these conditions. Failure mechanisms of different metallization systems (Al-Si, Al-Cu, Cu, TiN/Al-alloy/TiN, etc.) and different metallization structures (via, plug and interconnect) under AC current stress in a wide frequency range (from mHz to 500 MHz) has been study in this paper. Based on these experimental results, a damage healing model is developed, and electromigration design rules are proposed. It shows that in the circuit operating frequency range, the “design-rule current” is the time-average current. The pure AC component of the current only contributes to self-heating, while the average (DC component) current contributes to electromigration. To ensure longer thermal-migration lifetime under high frequency AC stress, an additional design rule is proposed to limit the temperature rise due to self-joule heating.

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Effect of strong coupling on dust acoustic waves and instabilities

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AIP Conference Proceedings 1998年第1期446卷 135-141页

作者： M. Rosenberg G. Kalman 1Department of Electrical and Computer Engineering University of California San Diego La Jolla California 92093-0407 2Department of Physics Boston College Chestnut Hill Massachusetts 02167

The presence of charged dust in a plasma can lead to very low frequency dust acoustic waves and instabilities. In certain laboratory plasmas the dust is strongly coupled, as characterized by the condition Γd=Qd2 exp(−d/λD)/dTd⩾1, where Qd is the dust charge, d is the intergrain spacing, Td is the dust thermal energy, and λD is the plasma screening length. When the dust is strongly coupled, the spatial correlation of the grains can affect the dispersion relation of these waves. We review our recent work [1] on the dispersion properties of dust acoustic waves in the strongly coupled (liquid) phase in a dusty plasma, including also the effects of dust-neutral collisions. We then discuss a preliminary analysis of the effect of strong dust coupling on an ion dust two-stream instability in a collisional dusty plasma. Applications to laboratory dusty plasmas are discussed.

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Aspect-oriented programming workshop report

Aspect-oriented programming workshop report

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Workshops on Object-Oriented Technology, ECOOP 1997

作者： Mens, Kim Lopes, Cristina Tekinerdogan, Bedir Kiczales, Gregor Department of Computer Science Programming Technology Lab Vrije Universiteit Brussel Pleinlaan 2 BrusselB-1050 Belgium Systems and Practices Laboratory Xerox PARC 3333 Coyote Hill Rd Palo AltoCA94304 United States Department of Computer Science Software Engineering University of Twente P.O. Box 217 Enschede7500 AE Netherlands

ISBN: (纸本)3540640398

Whereas it is generally acknowledged that code tangling reduces the quality of software and that aspect-oriented programming (AOP) is a means of addressing this problem, there is — as yet — no clear definition or characterisation of AOP. Therefore, the main goal of the ECOOP’97 AOP workshop was to identify the "good questions" for exploring the idea of AOP. © Springer-Verlag Berlin Heidelberg 1998.

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Unsupervised Hebbian learning in neural networks

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AIP Conference Proceedings 1998年第1期437卷 606-625页

作者： Bernd Freisleben Claudia Hagen 1Department of Electrical Engineering and Computer Science University of Siegen Hölderlinstr. 3 D-57068 Siegen Germany 2Department of Computer Science University of Darmstadt Julius-Reiber-Str. 17 D-64293 Darmstadt Germany

In this paper, a survey of a particular class of unsupervised learning rules for neural networks is presented. These learning rules are based on variants of Hebbian correlation learning to update the connection weights of two-layer network architectures consisting of an input layer with n units and an output layer with m units. It will be demonstrated that the networks are able to perform a variety of important data analysis tasks, including Principal Component Analysis (PCA), Minor Component Analysis (MCA) and Independent Component Analysis (ICA).

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Suppression of boron penetration for p+ polysilicon gate electrodes by ultra-thin RPECVD nitride films in composite oxide-nitride dielectrics

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AIP Conference Proceedings 1998年第1期449卷 288-291页

作者： Yider Wu Gerald Lucovsky 1Departments of Electrical & Computer Engineering North Carolina State University Raleigh North Carolina 27695-7911 2Department of Physics North Carolina State University Raleigh North Carolina 27695-7911

Ultra-thin (0.4∼0.8 nm) silicon nitride films were deposited by RPECVD (Remote Plasma Enhanced Chemical Vapor Deposition) onto thin oxides for the p+-polysilicon gated PMOS devices. Boron penetration is suppressed when the top nitride layer thickness increased to at least 0.8 nm. Suppression of boron diffusion is monitored by flat band voltage shifts as well as polysilicon depletion. Compared to oxides, improved charge to breakdown (Qbd) is obtained for nitride/oxide dual layers, while interface state density remains at a level of 3×1010 eV−1 cm−2.

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At-wavelength interferometry of extreme ultraviolet lithographic optics

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AIP Conference Proceedings 1998年第1期449卷 553-557页

作者： Sang Hun Lee Patrick Naulleau Kenneth Goldberg Edita Tejnil Hector Medecki Cynthia Bresloff Chang Chang David Attwood Jeffrey Bokor 1Center for X-ray Optics Mail Stop 2-400 Lawrence Berkeley National Laboratory Berkeley California 94720 2Department of Electrical Engineering and Computer Science University of California Berkeley California 94720 3Intel Components Research 2200 Mission College Blvd SC-02 Santa Clara California 95052

A phase-shifting point diffraction interferometer (PS/PDI) has recently been developed to evaluate optics for extreme ultraviolet (EUV) projection lithography systems. The interferometer has been implemented at the Advanced Light Source at Lawrence Berkeley National Laboratory and is currently being used to test experimental EUV Schwarzschild objectives. Recent PS/PDI measurements indicate these experimental objectives to have wavefront errors on the order of 0.1 waves (∼1 nm at a wavelength of 13.4 nm) rms. These at-wavelength measurements have also revealed the multilayer phase effects, demonstrating the sensitivity and importance of EUV characterization. The measurement precision of the PS/PDI has been experimentally determined to be better than 0.01 waves. Furthermore, a systematic-error-limited absolute measurement accuracy of 0.004 waves has been demonstrated.

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Analysis and Interventions in Large Network Games

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Control, Robotics, and Autonomous Systems 1000年第1期4卷 455-486页

作者： Francesca Parise Asuman Ozdaglar 1Department of Electrical and Computer Engineering Cornell University Ithaca New York 14853 USA email: fp264@cornell.edu 2Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA email: asuman@mit.edu

We review classic results and recent progress on equilibrium analysis, dynamics, and optimal interventions in network games with both continuous and discrete strategy sets. We study strategic interactions in deterministic networks as well as networks generated from a stochastic network formation model. For the former case, we review a unifying framework for analysis based on the theory of variational inequalities. For the latter case, we highlight how knowledge of the stochastic network formation model can be used by a central planner to design interventions for large networks in a computationally efficient manner when exact network data are not available.

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