The metal-oxide-semiconductor field-effect transistor (MOSFET) with a surrounding-gate (SG) is investigated. Poisson's Equation (PE) is solved analytically. The analytic expressions for electrical potential and th...
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The threshold voltage, Vth of a double-gate Schottky-Barrier (DGSB) source/drain (S/D) metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. An analytic expression for surface potential in ...
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This paper presents a low power security ASIP which also achieve high performance and flexibility. Our efforts for reducing the power are focused on the following three aspects. First, the Instruction Rom is divided i...
This paper presents a low power security ASIP which also achieve high performance and flexibility. Our efforts for reducing the power are focused on the following three aspects. First, the Instruction Rom is divided into two parts, one of which can be power gated. Second, the clock-gating method is used to cool the registers in the Register File unit. At last, the operator latchs are added in front of the EXE stage so that the idle function units can avoid unnecessary switches. The experimental result shows that the proposed approaches reduce the power of the core part of security ASIP and the whole design including storage elements by 30% and 16% on average respectively.
In this paper, we propose and demonstrate a novel 4-bit/symbol optical data format based on modulating dark return-to-zero (DRZ), differential quadrature phase-shift keying (DQPSK) and polarization-shift-keying (PoISK...
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The diffusion barrier properties of Co/TaN bilayer as Cu adhesion layer/diffusion barrier on the Si and low k (k=2.5) substrates were investigated. The barrier was prepared by using ion-beam sputtering technique. The ...
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A simple method of electrochemical deposition was adopted to fabricate super-hydrophobic ZnO surface. A contact angle for water of 159.9° was achieved through teflon 1600 modification. The impacts of deposit time...
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作者：
Jie FengYin ZHANGBaowei QiaoYanfei CaiYinyin LinTingao TangBingchu CaiBomy Chenjfeng@***
Shanghai Jiao Tong University Key lab. for thin film and microfabrication of Ministry of Education Inst. of Micro/Nano Sci.& Tech 1954 Huasan Road Shanghai N/A 200030 China People's Republic of 86-21-62823631 zy13225@***
Shanghai Jiao Tong University Key lab. for thin film and microfabrication of Ministry of Education Inst. of Micro/Nano Sci.& Tech 1954 Huasan Road Shanghai N/A 200030 China People's Republic of qbwhappy@***
Shanghai Jiao Tong University Key lab. for thin film and microfabrication of Ministry of Education Inst. of Micro/Nano Sci.& Tech 1954 Huasan Road Shanghai N/A 200030 China People's Republic of yylin@***
Fudan University State Key Laboratory of ASIC £¦ System Shanghai N/A 200433 China People's Republic of tatang@***
Fudan University State Key Laboratory of ASIC £¦ System Shanghai N/A 200433 China People's Republic of bccai@***
Shanghai Jiao Tong University Key lab. for thin film and microfabrication of Ministry of Education Inst. of Micro/Nano Sci.& Tech 1954 Huasan Road Shanghai N/A 200030 China People's Republic of bchen@***
Silicon Storage Technology Inc. 1171 Sonora Court Sunnyvale CA 94086 United States
The novel phase change materials Si-Sb-Te films were prepared. The crystallization temperature of films increases with the increasing of Si concentration. Phase separation was observed in the Si-Sb-Te films, the domin...
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The novel phase change materials Si-Sb-Te films were prepared. The crystallization temperature of films increases with the increasing of Si concentration. Phase separation was observed in the Si-Sb-Te films, the dominant phase is Sb2Te3. The melting temperature of Si-Sb-Te decreased to ~550°C lower than 640°C of Ge2Sb2Te5. The decrease of film thickness of Si-Sb-Te films is less than 2% after annealing at 400°C, which is less than ~7% of the film thickness change of Ge2Sb2Te5 film. The crystalline resistivity of Si-Sb-Te films increased and the ratio of amorphous/crystalline resistivity of Si-Sb-Te films increased also comparing with Ge2Sb2Te5 film, which is benefit to reduce the writing current and keep higher on/off ratio of phase change memory. Reversible switch was performed in the devices with Si-Sb-Te films. The device with Si14.3Sb28.6Te57.2 film can be programmed with a 100 ns SET pulse and a 20 ns RESET pulse. The Reset current is only 1.37mA for a 10μm-sized device.
Field programmable gate arrays (FPGAs) allow the same silicon implementation to be programmed or re-programmed for a variety of applications. It provides low NRE (non-recurring engineering) cost and short time to mark...
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As the channel length of metal-oxide-semiconductor field-effect transistors （MOSFETs） scales into the nanometer regime, quantum mechanical effects are becoming more and more significant. In this work, a model for th...
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As the channel length of metal-oxide-semiconductor field-effect transistors （MOSFETs） scales into the nanometer regime, quantum mechanical effects are becoming more and more significant. In this work, a model for the surrounding-gate （SG） nMOSFET is developed. The SchrSdinger equation is solved analytically. Some of the solutions are verified via results obtained from simulations. It is found that the percentage of the electrons with lighter conductivity mass increases as the silicon body radius decreases, or as the gate voltage reduces, or as the temperature decreases. The eentroid of inversion-layer is driven away from the silicon-oxide interface towards the silicon body, therefore the carriers will suffer less scattering from the interface and the electrons effective mobility of the SG nMOSFETs will be enhanced.
MIMO-OFDM systems aim to improve transmission quality and/or throughput but require significant signal processing capability and flexibility at reasonable cost. This paper proposes a reconfigurable architecture and as...
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