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dislocation Behavior in ZrC Particles during Elevated Temperature Compressive deformation of a 30 vol.% ZrC_p/W Composite

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Journal of Materials Science & technology 2011年第6期27卷 553-558页

作者： Taiquan Zhang Qingchang Meng Yujin Wang Yu Zhou Guiming Song Institute for Advanced Ceramics Harbin Institute of Technology Harbin 150001 China China National R&D Center for lhngsten Technology Xiamen 361009 China Department of Materials Science and Engineering Delft University of Technology Mekelweg 2 2628CD Delft the Netherlands

A 30 vol.% ZrCp/W composite has been deformed in compression in the temperature range of 1200-1600℃.dislocation nucleation mechanism in ZrC particles is discussed by analyzing the harmonious deformation between tungsten-matrix and ZrC *** activation apparently increases the mobility of screw segments,resulting in the formation of many kinetics jogs and thermodynamics jogs above 1300℃.The formation mechanisms of the dislocation configurations are studied.

关键词： ZrCp/W composite ZrC particle Compressive deformation dislocation microstructure

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Evaluation of de-embedding Technique Accuracy depending on de-embedding Patterns for CMOS Circuits up to 110 GHz

Evaluation of De-embedding Technique Accuracy Depending on D...

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European Microwave Integrated Circuits Conference

作者： Naoko Ono Kyoya Takano Mizuki Motoyoshi Kosuke Katayama Minoru Fujishima Wireless System Laboratory Corporate Research & Development Center Toshiba Corporation R&D Department-1 Semiconductor Technology Academic Research Center Tokyo Graduate School of Advanced Sciences of Matter Hiroshima University

ISBN: (纸本)9781467323024

The accuracy of de-embedding techniques depending on de-embedding layout patterns has been verified by experiment up to 110 GHz for CMOS circuits. The accuracy of the measured characteristics is affected significantly by the de-embedding procedure, which has been done for the raw measurement data. The de-embedding patterns and some transmission lines (TL) as test device were designed and fabricated using 40 nm CMOS process. From the experiment results, it was confirmed that each characteristic of the TL, such as propagation constant and characteristic impedance, has a different suitable de-embedding pattern to set a reference plane at a different desired position.

关键词： Millimeter wave technology W band de-embed Transmission lines reference plane

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P-29: Amorphous Silicon driver Integration in E-paper display

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SId Symposium digest of Technical Papers 2012年第1期41卷

作者： Jun Ma JungTae Bo Xixi Luo Tianyi Wu Zhihua Ling Zhongshou Huang Wei Zeng Yuesheng Li Advanced Technology Department of R&D Center Shanghai Tianma Micro-Electronics Co. Ltd. Department of Materials Science Fudan University 220 Handan Road Shanghai

E-paper technology has been gaining astonishing progresses recent years in paper-like high contrast ratio and extremely low power consumption. We have previously reported 2.5 inch 400×300 and 6 inch 800×600 E-paper module samples with reflectivity at 42% and contrast ratio at 8.6. We propose in this paper a novel E-paper module structure with amorphous silicon gate driver and data driver integrated on glass, without IC die and FPC attached. This design makes display module a truly portable and wireless picture card and board without battery, while maintain very convenient write and re-write functionalities through on-glass contact pins.

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Evidence for a cos (4φ) Modulation of the Superconducting Energy Gap of Optimally doped FeTe0.6Se0.4 Single Crystals Using Laser Angle-resolved Photoemission Spectroscopy

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Physical review Letters 2012年第23期109卷 237011-237011页

作者： K. Okazaki Y. Ito Y. Ota Y. Kotani T. Shimojima T. Kiss S. Watanabe C. -T. Chen S. Niitaka T. Hanaguri H. Takagi A. Chainani S. Shin Institute for Solid State Physics (ISSP) University of Tokyo Kashiwa Chiba 277-8581 Japan Department of Applied Physics University of Tokyo Tokyo 113-8656 Japan Graduate School of Engineering Science Osaka University Osaka 560-8531 Japan Research Institute for Science and Technology Tokyo University of Science Chiba 278-8510 Japan Beijing Center for Crystal R&D Chinese Academy of Science (CAS) Zhongguancun Beijing 100190 China RIKEN Advanced Science Institute 2-1 Hirosawa Wako Saitama 351-0198 Japan TRIP JST Chiyoda-ku Tokyo 102-0075 Japan RIKEN SPring-8 Center Sayo-gun Hyogo 679-5148 Japan CREST JST Chiyoda-ku Tokyo 102-0075 Japan

We study the superconducting-gap anisotropy of the Γ-centered hole Fermi surface in optimally doped FeTe0.6Se0.4 (Tc=14.5 K), using laser-excited angle-resolved photoemission spectroscopy. We observe sharp superconducting (SC) coherence peaks at T=2.5 K. In contrast to earlier angle-resolved photoemission spectroscopy studies but consistent with thermodynamic results, the momentum dependence shows a cos (4φ) modulation of the SC-gap anisotropy. The observed SC-gap anisotropy strongly indicates that the pairing interaction is not a conventional phonon-mediated isotropic one. Instead, the results suggest the importance of second-nearest-neighbor electronic interactions between the iron sites in the framework of s±-wave superconductivity.

关键词： Modulation

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P-2: Integrated a-Si Circuit for Capacitively Coupled drive Method in TFT-LCds

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SId Symposium digest of Technical Papers 2012年第1期40卷

作者： Jun Ma Xixi Luo TaeBo Jung Yong Wu Zhihua Ling Zhongshou Huang Wei Zeng Yuesheng Li Advanced Technology Development R&D Center Shanghai Tianma Micro-Electronics Co. Ltd. 889 Huiqing Rd. Pudong New Area Shanghai China Department of Materials Science Fudan University 220 Handan Road Shanghai

A novel amorphous silicon driving circuitry, operated in Capacitively Coupled driving (CCd) method, is proposed and analyzed. By employing the circuitry for TFT-LCd gate and storage capacitor lines, line inversion driving mode can be realized with dC voltage on common electrode. with dC voltage on color filter common electrode, a capacitive touch panel is no longer suffered from driving pulse cross-talk in a conventional line inversion TFT-LCd.

关键词： A-Si gate driver capacitively coupled driving power saving

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Numerical analysis on the performance of a kW class magnetic refrigerator 6

Numerical analysis on the performance of a kW class magnetic...

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6th IIr/IIF International Conference on Magnetic refrigeration at room Temperature, THErMAG 2014

作者： Noguchi, Y. Okamura, T. Miyazaki, Y. Hasegawa, H. Nagashima, K. Hirano, N. Bae, S. Takata, H. Wada, H. Kawanami, T. Department of Energy Sciences Tokyo Institute of Technology Tokyo Japan Cryogenic Systems Maglev Systems Technology Division Railway Technical Research Institute Tokyo Japan Superconductivity Team Electric Power R and D Center Chubu Electric Power Co. Inc. Aichi Japan R and D Division Advanced Technology Development Office Sanden Corporation Gunma Japan R and D Division Functional Material Group Santoku Corporation Hyogo Japan Department of Physics Kyushu University Hukuoka Japan Department of Mechanical Engineering Kobe University Hyogo Japan

ISBN: (纸本)9782362150074

We have constructed a room-temperature magnetic refrigerator, which was designed to provide kW class of cooling capacity at the temperature span of zero. The system uses two sets of ring Halbach-array magnetic circuit with a peak field of 1.5 Tesla, which are sandwiching a disk shaped active magnetic regenerator bed (AMr bed). The disk type AMr bed is divided into 12 sections. Each section is packed with sphere gadolinium (Gd) or Gd alloys (Gd-Y) compounds. Total amount of the magnetocaloric materials packed into one disk type AMr bed is 3.6 kg. The magnets rotate up to 40 rpm. The flow rate of the heat transfer fluid is up to 25 liter per minute. It is demonstrated that the cooling capacity is 1.4 kW at the temperature span of zero, and the maximum temperature span is 21 K under the no heat load condition using Gd and Gd-Y compound. In order to analyze the thermal characteristics of the kW class refrigerator, one-dimensional numerical simulations have been carried out. The simulations use experimentally obtained and predicted magnetocaloric properties of magnetocaloric materials. The one-dimensional simulations can describe the experimental results even in the actual condition of two-dimensional AMr bed shape. It is confirmed from experiment and numerical analysis that layered AMr bed which is packed with multiple materials gives larger maximum temperature span than that which is packed with a single material.

关键词： Numerical analysis

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Chemical Vapor deposition technology of (Ba, Sr)TiO 3 Thin Films for Gbit-Scale dynamic random Access Memories

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MrS Online Proceedings Library 2011年第1期541卷 3-10页

作者： Tsuyoshi Horikawa Masayoshi Tarutani Takaaki Kawahara Mikio Yamamuka Noriko Hirano Takehiko Sato Shigeru Matsuno Teruo Shibano Fusaoki Uchikawa Kouichi Ono Tatsuo Oomori Advanced Technology R&D Center Mitsubishi Electric Corporation Amagasaki Japan Department of Aeronautics and Astronautics Graduate School of Engineering Kyoto University Kyoto Japan

The current status of (Ba, Sr)TiO3 [BST] capacitor technology using a liquid source chemical vapor deposition (CVd) method is reviewed, focusing on the CVd techniques and the physical, electrical and process-integration-related properties of ru/BST/ru capacitors. The use of a new titanium metalorganic (MO) source, titanium bis(tert-butoxy) bis(dipivaloylmethanato) [Ti(tertBuO)2 (dPM)2] dissolved in tetrahydrofuran (THF) turned out to enable highly conformal deposition of BST films with a coverage ratio of ∼ 70 % for a trench with an aspect ratio of ∼ 5. Electrical properties of a 24-nm-thick BST film, deposited on a Pt substrate at a low substrate temperature of 480 °C, were also confirmed to be equivalent SiO2 thickness (teq) of ∼ 0.5 nm and leakage current of ∼ 1 ×10-7 A/cm2 at 1 V. As for the ru/BST/ru capacitors, no deteriorations of ru electrode and BST/ru interface were observed after 750 °C post-annealing experiment, showing good thermal stability of ru as a practical electrode material. Although current leak through ru/BST/ru capacitors slightly increased after the H2 annealing, such degradation in the leakage properties was restored by post-annealing in N2 ambience. Integrated ru/BST/ru capacitors with a 30-nm-thick CVd-BST film were fabricated by 0.5 μm ULSI technology, and low leakage current was confirmed for the stacked capacitors. regarding the reproducibility of BST deposition by the liquid source CVd method, the deviation ratio of ∼ ± 2.3 % in film thickness was obtained for ∼ 100 successive depositions, thickness uniformity across the wafers was ∼ ± 1.1 %. The above results imply the potential applicability of BST capacitor technology using a liquid source CVd method for Gbit-scale drAMs.

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Characterization of Plzt on Platinum Electrodes for High density Fram Application

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MrS Online Proceedings Library 2011年第1期446卷 337-342页

作者： YongSoo Choi Soodoo Choe SeungHyun Kim ChangEun Kim dooYoung Yang Department of Ceramic Engineering YonSei University Seoul Korea Advanced Technology R&D Lab. LG Semicon Co. Ltd. Cheongju-si Korea

A new sol-gel route to obtain PLZT thin film was developed by combining the advantage of 2-methoxyethanol as a solvent and acetylacetone as a chelating agent. The sol maintained the same stable state as that of fresh synthesized sol even after 60 days of aging. The PLZT films spin coated onto a Pt/Ti/SiO2 substrate with 15% Pb excess and 7.5% La added sol showed well developed rosette microstructure of uniform grain sizes(0.3 - 0.5 μm) and gave well behaved ferroelectric properties with the values of Ps, Pr, and Ec of 40 μC/cm2, 15 μ C/cm2, and 20 kV/cm respectively at 5V after 650 °C and above annealing. The degradation in polarization of 2.5% La doped PLZT thin film was found to be less than 20% up to 1012 cycles

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Thermo-Mechanical Stresses in Laminated Polymer Films on Silicon Substrates

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MrS Online Proceedings Library 2011年第1期515卷 147-152页

作者： Jin S. Kim Kyung W. Paik Seung H. Oh Hyun S. Seo Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology Taejon Korea Department of Mechanical Engineering Korea Advanced Institute of Science and Technology 373-1 Taejon Korea LCD R&D Center LG Electronics Inc Anyang-shi Kyunggi-do Korea

Thermo-mechanical stresses in MCM-d substrate are important reliability and fabrication issues. The differences in co of thermal expansion (CTE) between substrate, polymer, and metal leads to complicated stress fields in multilevel interconnect structures. While the majority of reports in the literature have focused on spin-coated polyimides, this paper mainly focuses on laminated polymer dielectrics. This study uses material sets representing typical MCM-d structures to monitor the stress level in the polymer films. The substrate deflection caused by composite stresses during fabrication and thermal cycling test is determined by a curvature measurement technique. A simple analytical model which predicts a stress contribution from each individual layer during MCM-d substrate fabrication is proposed and developed by computer simulation as well. The composite stress or bowing in multilayer structures is due to the summation of each individual layer contribution. From a thermo-mechanical stress viewpoint, Ultem® thermoplastic and the epoxy thermoset adhesive exhibit quite different behaviors. In case of the epoxy thermoset adhesive, the amount of bowing increases as number of layers increases and its behavior can be predicted by an elastic model. However, in the case of the Ultem® thermoplastic adhesive, bow values become stabilized as number of layers increases because of the stress relaxation effect of the thermoplastic adhesive during lamination process above Tg of the Ultem® thermoplastic.

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48.4: Ink Jet Fabrication of Alignment Layers on High-Temperature Polysilicon Liquid Crystal Panels

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SId Symposium digest of Technical Papers 2012年第1期37卷

作者： Kei Hiruma Katsumi Suzuki Osamu Kasuga Atsushi Ito Yuichiro Iwai Hisashi Aruga Masayuki Yazaki Akinori Hashizume Takashi Okusa Hideyuki Nagasawa Manabu Nagasaka Takahiro Usui IJ Industrial Application R&D Department Seiko Epson Corp. Nagano Japan TFT Design&Engineering Department Seiko Epson Corp. Nagano Japan Advanced Factory Design Center Seiko Epson Corp. Nagano Japan Technology Platform Research Center Seiko Epson Corp. Nagano Japan

Inkjet technology was used in a mass production process to form an alignment layer on high-temperature polysilicon TFT liquid crystal panels used in LCd projectors. This is the first-ever inkjet process for forming alignment layers in an LCd manufacturing process. Surface treatment, inkjet ejection, and post-print drying processes were integrated, and process conditions and printing materials were optimized, thereby sharply improving display quality while reducing process environmental impact.

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