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Interfacial B-O bonding modulated S-scheme B-doped N-deficient C_(3)N_(4)/O-doped-C_(3)N_(5) for efficient photocatalytic overall water splitting

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Chinese Chemical Letters 2025年第1期36卷 355-361页

作者： Entian Cui Yulian Lu Zhaoxia Li Zhilei Chen Chengyan Ge Jizhou Jiang Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province Yancheng Institute of TechnologyYancheng 224051China School of Environmental Ecology and Biological Engineering Key Laboratory of Green Chemical Engineering Process of Ministry of EducationEngineering Research Center of Phosphorus Resources Development and Utilization of Ministry of EducationWuhan Institute of TechnologyWuhan 430205China

Photocatalytic overall pure water splitting is a promising method for generating green hydrogen energy under mild ***,this process is often hindered by sluggish electron-hole separation and *** address this,a step-scheme(S-scheme)B-doped N-deficient C_(3)N_(4)/O-doped C_(3)N_(5)(BN-C_(3)N_(4)/O-C_(3)N_(5))heterojunction with interfacial B-O bonds has been *** Pt and Co(OH)_(2) as co-catalysts,BN-C_(3)N_(4)/O-C_(3)N_(5) S-scheme heterojunction demonstrates significantly enhanced photocatalytic activity for overall pure water splitting under visible light,achieving H_(2) and O_(2) evolution rates of 40.12 and 19.62μmol/h,*** characterizations and experiments revealed the performance-enhancing effects of the enhanced built-in electric field and the interfacial B-O ***,the strengthened built-in electric field provides sufficient force for rapid interfacial electron ***,by reducing the transport energy barrier and transfer distance,the interfacial B-O bonds facilitate rapid recombination of electrons and holes with relatively low redox potential via the S-scheme charge-transfer route,leaving the high-potential electrons and holes available for H^(+)reduction and OH^(-)oxidation ***,the photocatalytic efficiency of BN-C_(3)N_(4)/O-C_(3)N_(5) S-scheme heterojunction was significantly improved,making it a promising approach for green hydrogen production through overall pure water splitting.

关键词： Interfacial B-O bonds BN-C_(3)N_(4) O-C_(3)N_(5) S-scheme heterojunction Water splitting

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Effect of Graphite Addition on Microstructure, Mechanical Properties and Thermal Properties of Injection Molded AZ91D Alloy+1

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Materials Transactions 2024年第4期65卷 374-380页

作者： Hideshima, Yasutoshi Maeda, Fumiya Fukuta, Tadao Ozaki, Koichi Course of Advanced Systems Engineering Graduate School of Computer Science and Systems Engineering Okayama Prefectural University Soja719-1197 Japan Process Technology Development Department Technology Development Division Seiko Epson Corp. Suwa399-0211 Japan Department of Systems Engineering Faculty of Computer Science and Systems Engineering Okayama Prefectural University Soja719-1197 Japan

Magnesium chips were coated with a high concentration of graphite using a binder and were used as the raw material for injection molding. The microstructure of the magnesium injection-molded product with added graphite exhibited a dispersion of needle-like graphite particles. No significant voids were observed at the interfaces between the graphite and the matrix. The addition of more than 0.5 mass% graphite decreased the proof stress and tensile strength of the injection-molded products. The Young’s modulus of the graphite-added products tended to decrease with an increase in the graphite content, which is consistent with the lower limit of the rule of mixtures. The thermal conductivity of the 6.9 mass% graphite-added product increased compared with that of the AZ91D magnesium alloy and the coefficient of linear thermal expansion decreased. Both values are within a range that satisfied the rules of mixtures. © 2024 The Japan Institute of Metals and Materials.

关键词： Thermal expansion

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Multi Die Stacked Structure Fabricated by WoW Bonding 12

Multi Die Stacked Structure Fabricated by WoW Bonding

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12th IEEE CPMT Symposium Japan, ICSJ 2023

作者： Shimamoto, Haruo Araga, Yuuki Fujino, Masahisa Watanabe, Naoya Takahashi, Kenji Kikuchi, Katsuya Kawagoe, Tsuyoshi Homma, Ichiro Masuda, Takatoshi Device Technology Research Institute National Institute of Advanced Industrial Science & Technology Ibaraki Tsukuba Japan UltraMemory Inc. Stacking Process Development Department Hachioji Tokyo Japan

ISBN: (纸本)9798350325157

To achieve 2-die stacking process, fusion bonding technology was applied for Wafer on Wafer (WoW) by each oxide film, and Through Silicon Via (TSV) was used to connect metal layer in each wafer. Electrical characteristics was evaluated to confirm the connection. We also introduced the case study of 4-die stacking using the 2-die stacking technology. © 2023 IEEE.

关键词： Wafer bonding

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Correcting on-chip distortion of control pulses with silicon spin qubits

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Chinese Physics B 2025年第1期34卷 265-271页

作者： Ming Ni Rong-Long Ma Zhen-Zhen Kong Ning Chu Wei-Zhu Liao Sheng-Kai Zhu Chu Wang Gang Luo Di Liu Gang Cao Gui-Lei Wang Hai-Ou Li Guo-Ping Guo CAS Key Laboratory of Quantum Information University of Science and Technology of China(USTC)Hefei 230026China CAS Center for Excellence in Quantum Information and Quantum Physics University of Science and Technology of ChinaHefei 230026China Integrated Circuit Advanced Process Research and Development Center Institute of MicroelectronicsChinese Academy of Sciences(CAS)Beijing 100029China Hefei National Laboratory Hefei 230088China Beijing Superstring Academy of Memory Technology Beijing 100176China Origin Quantum Computing Company Limited Hefei 230026China

In semiconductor quantum dot systems,pulse distortion is a significant source of coherent errors,which impedes qubit characterization and ***,we demonstrate two calibration methods using a two-qubit system as the detector to correct distortion and calibrate the transfer function of the control *** methods are straightforward to implement,robust against noise,and applicable to a wide range of qubit *** two methods differ in correction accuracy and *** first,coarse predistortion(CPD)method,partially mitigates *** second,all predistortion(APD)method,measures the transfer function and significantly enhances exchange oscillation *** methods use exchange oscillation homogeneity as the metric and are suitable for any qubit driven by a diabatic *** believe these methods will enhance qubit characterization accuracy and operation quality in future applications.

关键词： quantum computation quantum dot pulse distortion

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An experimental study on the control and significance of zinc porosity in arc welding of zinc coated steel in automotive chassis

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Welding and Cutting 2022年第2期21卷 98-103页

作者： Arenillas, Carlota Bell, Mike Ravelo, José A. Manager of innovation projects in the Advanced Technology and Applications department at Gestamp Chassis Boroa Spain Development engineer in the Advanced Technologies and Applications department at Gestamp Chassis Newton Aycliffe United Kingdom Welding process engineer at Gestamp Chassis Boroa Spain

A continuing automotive industry trend towards in-creased use of galvanized steel in chassis structures has generated big challenges regarding the in-production assessment and control of zinc porosity defects in arc welds. The objective of this study was to investigate, in a systematic way, whether it is possible to eliminate or significantly reduce the amount of zinc porosity in MAG welds by optimization of weld parameters or by use of alternative MAG process variants and weld wires. A review of the traditional weld quality sampling methods found that they struggle to represent the true extent or severity of zinc porosity in welds. Our experiment results concluded that alternative MAG weld variants, special parameters or novel weld wires could not eliminate or very significantly reduce zinc porosity content, compared to cur-rent standard practice. However, we have shown that the significance of zinc pore defects on fatigue durability is actually very low so we suggest it may be more cost effective to adjust safety factors, in critical welds only, in the design analysis process. © 2022, DVS Media GmbH. All rights reserved.

关键词： Porosity

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Alternative 3D Double Side Molded SiP for 5G Communication 18

Alternative 3D Double Side Molded SiP for 5G Communication

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18th International Microsystems, Packaging, Assembly and Circuits technology Conference, IMPACT 2023

作者： Yang, Shen-Yu Tong, Yu-Wen Lin, Jing-Jun Yang, Jui-Hao Peng, Chih-Hung Chan, Chao-Chieh Research & Technology Integration Center Wistron NeWeb Corporation Advanced Mfg. Process Development Div. 5 Lihsin Rd. VI Hsinchu Science Park Hsinchu300 Taiwan

ISBN: (纸本)9798350384123

The demands for radio frequency (RF) of up-coming 5G electronic applications are gradually rising, arising recently from the need of smaller and thinner package in internet of things (IoT) and electronics devices. 3D system in package (3D SiP) including double side molding and antenna in package (AiP) could meet the above requirements. Dual side surface mounting technology (SMT) and double side molding are performed in this study to achieve miniaturization of 3D SiP module. A cost-effective and alternative molding process is completed by vacuum printing encapsulation systems (VPES) instead of common transfer molding. In this study, there are two kinds of double side molding structures, conformal and compartment molding, are employed with EMI shielding. Both molding architectures adopted conductive material as a dam to ensure electrical connectivity of side wall and sputtering metal layer to acquire EMI shielding effectiveness. To verify the reliability response of the molding structure, pre-conditioning is performed. A successful double side molding structure done by VPES with PCB warpage of 0.5 0.6 mm has been achieved in this work. Moreover, the dual side molding could reach the package requirements of 5G IoT module. © 2023 IEEE.

关键词： System-in-package

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Metabolome and RNA-seq reveal discrepant metabolism and secretory metabolism profile in skeletal muscle between obese and lean pigs at different ages

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Science China(Life Sciences) 2025年第4期68卷 1102-1117页

作者： Liu Guo Junfei Xu Wenyue Zhou Sisi Chen Hanjing Shi Mengmeng Han Zekun Yang Yehui Duan Weijun Pang Yulong Yin Fengna Li Laboratory of Animal Nutritional Physiology and Metabolic Process Key Laboratory of Agro-ecological Processes in Subtropical RegionInstitute of Subtropical AgricultureChinese Academy of SciencesChangsha410125China University of Chinese Academy of Sciences Beijing101408China College of Advanced Agricultural Sciences University of Chinese Academy of SciencesBeijing100049China Laboratory of Animal Fat Deposition and Muscle Development College of Animal Science and TechnologyNorthwest A&F UniversityYangling712100China

Metabolites and metabolism-related gene expression profiles in skeletal muscle change dramatically under obesity,aging and metabolic *** obese and lean pigs are ideal models for metabolic ***,we compared metabolome and transcriptome of Longissimus dorsi(LD)muscle between Taoyuan black(TB,obese)and Duroc(lean)pigs at different *** defined the“window phase”of intramuscular fat(IMF)deposition in TB pig,which has significantly higher IMF than Duroc *** results displayed discrepant lipid composition and different expression genes(DEGs)enriched in lipid metabolism,and both metabolome and transcriptome analyses revealed stronger energy expenditure and more active amino acid and protein metabolism in Duroc pig.10 up-and 51 down-regulated biomarker metabolites with age-and breed-specificity were *** secretory metabolites,including organic acid(fumaric acid,succinate,malic acid,and gamma-aminobutyric acid),amino acid(L-lysine,and L-glutamic acid),lipid(2-hydroxyisovaleric acid,and L-carnitine)were demonstrated a significant correlation with IMF *** research highlights the huge difference of metabolic spectrum in skeletal muscle between obese and lean model and muscle-derived secretory metabolites might act as an ambassador of intercellular communication to regulate systematic metabolism.

关键词： skeletal muscle metabolome transcriptome biomarker metabolite intercellular communication lipid deposition pig model

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Optimal Design of WET Etching Bath for 3D Flash Memories Using Multi-Objective Bayesian Optimization 30

Optimal Design of WET Etching Bath for 3D Flash Memories Usi...

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30th International Symposium on Semiconductor Manufacturing, ISSM 2024

作者： Kouda, Miyuki Mori, Yumi Sugita, Tomohiko Ng, Youyang Kioxia Corporation Ai and System Research Center Frontier Technology R and D Institute Yokkaichi-shi Japan Kioxia Corporation Ai and System Research Center Frontier Technology R and D Institute Yokohama-shi Japan Kioxia Corporation Advanced Memory Process Development Center Memory Division Yokkaichi-shi Japan

ISBN: (纸本)9798331510589

In recent years, the complexity of semiconductor manufacturing processes has increased, leading to a growing need for the high-precision optimization of device structures. For example, in batch-type wet etching devices, the flow of chemical liquids within the process bath can vary depending on the device structure, causing variations in the etching state of the wafer. This issue is addressed using a feedback mechanism that iteratively adjusts the device structure based on the results of an etching experiment, thereby achieving more uniform etching conditions. However, this approach requires a large number of trial experiments. In the fabrication process of 3D flash memories, word-line formation in the silicon substrate requires precise control of the silicon concentration in the etching solution. However, this concentration can fluctuate due to the dissolution of the SiN film during the etching process. This fluctuation may cause various problems. This study introduces an innovative method utilizing multi-objective Bayesian optimization to derive optimal wet etching bath design parameters;this method is informed by image and physical-quantity data from fluid dynamics simulations [1]. This approach is validated through simulation experiments, whose results are used to identify the best possible wet etching bath designs effectively. © 2024 IEEE.

关键词： Wet etching

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Reverse Laser Assisted Bonding (R-LAB) technology for Chiplet Module Bonding on Substrate 24

Reverse Laser Assisted Bonding (R-LAB) Technology for Chiple...

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24th Electronics Packaging technology Conference, EPTC 2022

作者： Na, SeokHo Gim, MinHo Kim, GaHyeon Ryu, DongSu Park, DongJoo Kim, JinYoung Amkor Technology Korea Inc. Advanced Process & Material Development Global R&d Center 150 Songdomirate-ro Yeonsu-gu Incheon Korea Republic of

ISBN: (纸本)9798350398854

There are several chip-to-substrate interconnection technologies in the packaging tool kit such as mass reflow (MR), thermocompression bonding (TCB) and laser assisted bonding (LAB). MR is a mature process but has known limitations on fine pitch devices and large/thin substrate packages. TCB has the advantage to minimize bump stress for low-K dielectric devices but its productivity is very low. However, LAB can provide a solution for advanced devices with its localized heating and short bonding time. Recently, demand for fine-pitch, Flip Chip bumps and large/thin substrate packages has increased, resulting in industry interest in LAB due to its good quality and high productivity. Amkor technology invented LAB technology in 2014 and passed qualification for multiple devices from customers through many years of development and has been in high volume production for major customers since 2018. However, as the industry continues to require high bonding performance with various new devices, existing LAB technology may not support all these applications. These devices have led to the development of a new bonding concept, which is reverse laser assisted bonding (R-LAB) technology. R-LAB emits the laser to the bottom side of the substrate through a vacuum stage block, which is opposite laser emission direction to existing LAB. It was developed in 2021 by Amkor technology and showed promising results for the packages where top LAB does not work. There are several devices that require R-LAB. One is back side metallization (BSM) die. BSM dies are necessary for metal thermal interface material (TIM) applications for high thermal performance packages. Promising results for BSM die were published in recent 72nd ECTC [1]. Other devices that require R-LAB include chiplet module bonding on substrate and DRAM packaging in an epoxy molding compound (EMC). A chiplet module is necessary for high-performance applications such as servers, networking, artificial intelligence (AI), graphics

关键词： Substrates

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Optimal Design of Wet Etching Bath for 3D Flash Memories Using Multi-Objective Bayesian Optimization

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IEEE Transactions on Semiconductor Manufacturing 2025年

作者： Kouda, Miyuki Mori, Yumi Sugita, Tomohiko Ng, Youyang KIOXIA Corporation AI and System Research Center Frontier Technology R and D Institute Japan KIOXIA Corporation Advanced Memory Process Development Center Memory Division Japan

Recently, the complexity of semiconductor manufacturing processes has increased, resulting in a growing need for high-precision optimization of device structures. For example, in batch-type wet etching devices, the flow of chemical liquids in the process bath can vary depending on the device structure, which causes variations in the etching state of the wafer. This issue is addressed using a feedback mechanism that adjusts the device structure iteratively based on the results of an etching experiment, thereby achieving more uniform etching conditions. However, this approach requires a large number of trial experiments. In the fabrication process of 3D flash memory devices, the formation of word lines in the silicon substrate requires precise control of the silicon concentration in the etching solution. However, this concentration can fluctuate due to the dissolution of the SiN film during the etching process, which can cause various problems. Thus, this study proposes an innovative multi-objective Bayesian optimization method that is informed by image and physical quantity data from fluid dynamics simulations to derive optimal wet etching bath design parameters. The proposed method was validated through simulation experiments, and the simulation results were used to identify the best possible wet etching bath designs. © 1988-2012 IEEE.

关键词： Wet etching

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