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Pacific Rim Conference on Lasers and Electro-Optics (CLEO/Pacific Rim)

作者： Shaobo Fang T. Tanigawa K. Ishikawa N. Karasawa M. Yamashita Department of Applied Physics Core Research of Evolutional Science and Technology Japan Science and Technology Agency Hokkaido University Sapporo Japan RIKEN Institute for Physical and Chemical Research Saitama Japan Department of Applied Photonics System Technology Chitose Institute of Science and Technology Chitose Japan

The theoretical investigation of field-waveform effects of monocycle and two-cycle pumpings on the high-order harmonic generation shows, in the former, the sine field is better than the cosine for the efficient shorte... 详细信息

ISBN: (纸本)9781424438303

关键词： Pulse modulation Pulse generation Optical pulse generation Chemical technology Pulse amplifiers Optical modulation Intensity modulation Electron emission Optical harmonic generation Chirp modulation

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Yoshimatsu et al. Reply:

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Physical Review Letters 2009年第19期102卷 199704-199704页

作者： K. Yoshimatsu R. Yasuhara H. Kumigashira M. Oshima Department of Applied Chemistry University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-8656 Japan Core Research for Evolutional Science and Technology (CREST) Japan Science Technology Agency Tokyo 113-8656 Japan Synchrotron Radiation Research Organization The University of Tokyo Bunkyo-ku Tokyo 113-8656 Japan

A Reply to the Comment by Scott A. Chambers.

关键词： Atomic physics

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Ultrafast carrier relaxation dynamics in InN films

Ultrafast carrier relaxation dynamics in InN films

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Pacific Rim Conference on Lasers and Electro-Optics (CLEO/Pacific Rim)

作者： K. Fukunaga M. Hashimoto H. Kunugita J. Kamimura A. Kikuchi K. Kishino K. Ema Department of Engineering and Applied Sciences Sophia University Japan Department of Engineering and Applied Sciences Sophia University Chiyoda Tokyo Japan Core Research of Evolutional Science and Technology Japan Science and Technology Corporation Japan Jochi Daigaku Chiyoda-ku Tokyo JP

Ultrafast and slow photo-carrier dynamics in InN films were investigated using femtosecond transient measurements. We found the slow component disappears under the optimized condition due to the equilibrium of band fi... 详细信息

ISBN: (纸本)9781424438303

关键词： Charge carrier density Laser excitation Photonic band gap Temperature measurement Ultrafast optics Filling Density measurement Optical scattering Optical modulation Electron mobility

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Functional analysis of fusarium oxysporum nitric oxide reductase expressed in plant suspension-cultured cells

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Biotechnology 2009年第2期8卷 204-211页

作者： Abdel-Banat, Babiker M. A. Adam, Suaad E. H. Morikawa, Hiromichi Department of Applied Molecular Bioscience Graduate School of Medicine Yamaguchi University 2-16-1 Tokiwadai Ube 755-8611 Japan Department of Mathematical and Life Science Graduate School of Science Hiroshima University 1-3-1 Kagamiyama Higashi-Hiroshima 739-8526 Japan Core Research for Evolutional Science and Technology Japan Science and Technology Corporation Agency Japan

The biological function of Reactive Nitrogen Species (RNS) is not well understood, however, they actively contribute to the effect of green house gases. Development of plants that could efficiently denitrify intermediates of the RNS to the dinitrogen (N2) is a rationale that could help amelioration the effect of these gases. Fusarium oxysporum cytochrome P-450 nor gene (Fnor) was constitutively expressed in tobacco BY-2 cells. The gene product functions as nitric oxide reductase (nor), which catalyzes the reduction of nitric oxide (NO) to nitrous oxide (N2O) in the fungal denitrification pathway. Intact transgenic BY-2 cells cultured in 15N-labeled nitrate (15NO3-) actively produced 15N2O gas up to 59 folds higher than the wild-type cells. Activity of the enzyme was also confirmed by an in vitro nor activity assay. Tungstate (a nitrate reductase inhibitor) and cyanide (an inhibitor of the last protein complex of electron transport chain) strongly inhibited 15N2O production. These observations together suggest that Fnor enhanced the reduction of nitrate to N2O in plant cells. This finding indicates that plant cells are capable to tackle the denitrification pathway. © 2009 Asian Network for Scientific Information.

关键词： Denitrification

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Pressure-induced change in the electronic structure of epitaxially strained La1−xSrxMnO3 thin films

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Physical Review B 2009年第13期80卷 132406-132406页

作者： K. Horiba A. Maniwa A. Chikamatsu K. Yoshimatsu H. Kumigashira H. Wadati A. Fujimori S. Ueda H. Yoshikawa E. Ikenaga J. J. Kim K. Kobayashi M. Oshima Department of Applied Chemistry The University of Tokyo Tokyo 113-8656 Japan Synchrotron Radiation Research Organization The University of Tokyo Tokyo 113-8656 Japan Core Research for Evolutional Science and Technology (CREST) Japan Science and Technology Agency Tokyo 102-0075 Japan Department of Physics The University of Tokyo Tokyo 113-0033 Japan NIMS/SPring-8 Hyogo 679-5148 Japan JASRI/SPring-8 Hyogo 679-5198 Japan

We report the observation of pressure-induced changes in the electronic structures of La1−xSrxMnO3 (LSMO) by hard x-ray photoemission spectroscopy. Application of compressive and tensile strains results in the formation of a gap at the Fermi level (EF) and suppression of spectral weight at EF, respectively, across magnetic phase transitions. In contrast, no detectable change is observed in the absence of phase transitions even upon application of pressure. These results indicate that the change in the electronic structure of LSMO does not originate from the lattice distortions alone, but is induced by subtle interplay among the lattice, magnetic, and orbital degrees of freedom.

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Madelung potentials and covalency effect in strained La1−xSrxMnO3 thin films studied by core-level photoemission spectroscopy

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Physical Review B 2009年第12期80卷 125107-125107页

作者： H. Wadati A. Maniwa A. Chikamatsu H. Kumigashira M. Oshima T. Mizokawa A. Fujimori G. A. Sawatzky Department of Physics and Astronomy University of British Columbia Vancouver British Columbia Canada V6T-1Z1 Department of Applied Chemistry University of Tokyo Bunkyo-ku Tokyo 113-8656 Japan Core Research for Evolutional Science and Technology Japan Science and Technology Agency Chiyoda-ku Tokyo 102-0075 Japan Synchrotron Radiation Research Organization University of Tokyo Bunkyo-ku Tokyo 113-8656 Japan Department of Complexity Science and Engineering University of Tokyo Kashiwa Chiba 277-8561 Japan Department of Physics University of Tokyo Bunkyo-ku Tokyo 113-0033 Japan

We have studied the effects of Madelung potentials on the shifts in the core-level photoemission spectra by investigating La0.6Sr0.4MnO3 thin films grown on three kinds of substrates, SrTiO3, (LaAlO3)0.3−(SrAl0.5Ta0.5O3)0.7, and LaAlO3. The experimental shifts in the La 4d and Sr 3d core levels are almost the same as the calculated Madelung potentials, which we attribute to the nearly ionic character of these atoms. On the other hand, the experimental shifts in the O 1s and Mn 2p core levels are negligibly small. We consider that this is due to the strong covalent character of the Mn-O bonds.

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In situ photoemission study of Nd1−xSrxMnO3 epitaxial thin films

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Physical Review B 2009年第15期79卷 153106-153106页

作者： H. Wadati A. Chikamatsu H. Kumigashira A. Fujimori M. Oshima M. Lippmaa M. Kawasaki H. Koinuma Department of Physics University of Tokyo Bunkyo-ku Tokyo 113-0033 Japan Department of Applied Chemistry University of Tokyo Bunkyo-ku Tokyo 113-8656 Japan Core Research for Evolutional Science and Technology of Japan Science and Technology Agency Chiyoda-ku Tokyo 102-0075 Japan Synchrotron Radiation Research Organization University of Tokyo Bunkyo-ku Tokyo 113–8656 Japan Institute for Solid State Physics University of Tokyo Kashiwa Chiba 277–8581 Japan Institute for Materials Research Tohoku University 2–1–1 Katahira Aoba Sendai 980–8577 Japan National Institute for Materials Science 1–2–1 Sengen Tsukuba Ibaraki 305–0047 Japan

We have performed an in situ photoemission study of Nd1−xSrxMnO3 (NSMO) thin films grown on SrTiO3 (001) substrates by laser molecular-beam epitaxy. The lattice constants of the thin films were relaxed from those of the substrates, and the transport properties were almost the same as those of bulk NSMO. From core-level photoemission studies, we found that the behavior of the chemical-potential shift was not much different from that of the bulk NSMO samples. In the valence-band spectra, finite intensity at the Fermi level was observed even in the insulating phase. The band dispersions of Nd0.6Sr0.4MnO3 obtained by angle-resolved photoemission spectroscopy were almost the same as those of La0.6Sr0.4MnO3 thin films. These results showed that NSMO is closely related to La1−xSrxMnO3 in terms of the band structure, except for a decrease in the coherent spectral weight.

关键词： core levels epitaxial layers Fermi level insulating thin films lattice constants molecular beam epitaxial growth neodymium compounds photoelectron spectra strontium compounds valence bands

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Fluorescence XAFS study of local structures in high-k gate dielectrics HfSiON/SiON/Si annealed at various nitrogen gas partial pressure

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Journal of Physics: Conference Series 2009年第1期190卷

作者： Ofuchi, H. Toyoda, S. Ikeda, K. Liu, L. Liu, Z. Oshima, M. Japan Synchrotron Radiation Research Institute (JASRI) Sayo-gun Hyogo 679-5198 1-1-1 Kouto Sayo-cho Japan Department of Applied Chemistry University of Tokyo Bunkyo-ku Tokyo 113-8656 Japan Core Research for Evolutional Science and Technology of Japan Science and Technology Agency Chiyoda-ku Tokyo 102-0075 Japan Synchrotron Radiation Research Organization University of Tokyo Bunkyo-ku Tokyo 113-8656 Japan Semiconductor Technology Academic Research Center Kohoku-ku Kanagawa 222-0033 Japan

Geometric structures for HfSiON/SiON/Si films annealed at various N 2 gas partial pressures were investigated using fluorescence XAFS measurement at Hf LIII- and LI-edge. The XAFS analysis has revealed that the local ...

Geometric structures for HfSiON/SiON/Si films annealed at various N ₂ gas partial pressures were investigated using fluorescence XAFS measurement at Hf L_III- and L_I-edge. The XAFS analysis has revealed that the local structures around the Hf atoms strongly depend on the N₂ gas partial pressure. For the sample annealed at the N₂ gas partial pressure of 10 Torr HfN and HfSiON coexist, and for the samples annealed at the N₂ gas partial pressure above 100 Torr Hf atoms form HfSiON only. These results indicate that the formation of HfN for HfSiON/SiON/Si films can be suppressed by annealing at proper partial pressure of N ₂ gas. © 2009 IOP Publishing Ltd.

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Macromol. Biosci. 9/2009

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Macromolecular Bioscience 2009年第9期9卷

作者： Hyungjin Kim Takami Akagi Mitsuru Akashi Department of Applied Chemistry Graduate School of Engineering Osaka University 2‐1 Yamadaoka Suita 565‐0871 Japan Japan Science and Technology Agency (JST) Core Research for Evolutional Science and Technology (CREST) Saitama Japan

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Optical properties of InxAl1−xN film and nanocolumns

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Journal of Physics: Conference Series 2009年第1期193卷

作者： Masafumi Hashimoto Jumpei Kamimura Hideyuki Kunugita Kazuhiro Ema Akihiko Kikuchi Katsumi Kishino Department of Engineering and Applied Sciences Sophia University 7-1 Kioi-cho Chiyoda-ku Tokyo 102-8554 Japan Sophia Nanotechnology Research Center Japan Core Research for Evolutional Science and Technology (CREST) Japan Science and Technology Agency Japan

We analyzed photoluminescence (PL) spectra of In-rich InxAl1−xN nanocolumns (NCs; x = 0.80) and film (x = 0.82) using the free-electron recombination to bound (FERB) model. The FERB model fits well to the PL spectra of the In-rich InxAl1−xN film and NCs, which implies that light-emitting properties of In-rich InxAl1−xN are similar to those of InN. We obtained bandgap energies and electron carrier densities from the results of fitting the PL spectra.

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