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electrical programmable multilevel nonvolatile photonic random-access memory

Light(science & Applications) 2023年第11期12卷 2325-2334页

作者： Jiawei Meng Yaliang Gui Behrouz Movahhed Nouri Xiaoxuan Ma Yifei Zhang Cosmin-Constantin Popescu Myungkoo Kang Mario Miscuglio Nicola Peserico Kathleen Richardson Juejun Hu Hamed Dalir Volker J.Sorger Department of Electrical and Computer Engineering George Washington UniversityWashington DC 20052USA Florida Semiconductor Institute University of FloridaGainesvilleFL 32603USA Department of Electrical and Computer Engineering University of FloridaGainesvilleFL 32603USA Department of Materials Science&Engineering Massachusetts Institute of TechnologyCambridgeMA 02139USA CREOL The College of Optics&PhotonicsUniversity of Central FloridaOrlandoFL 32816USA

Photonic Random-Access Memories(P-RAM)are an essential component for the on-chip non-von Neumann photonic computing by eliminating optoelectronic conversion losses in data *** Phase-Change materials(PCMs)have been showed multilevel memory capability,but demonstrations still yield relatively high optical loss and require cumbersome WRITE-ERASE approaches increasing power consumption and system package *** we demonstrate a multistate electrically programmed low-loss nonvolatile photonic memory based on a broadband transparent phase-change material(Ge2Sb2Se5,GSSe)with ultralow absorption in the amorphous state.A zero-staticpower and electrically programmed multi-bit P-RAM is demonstrated on a silicon-on-insulator platform,featuring efficient amplitude modulation up to 0.2 dB/μm and an ultralow insertion loss of total 0.12 dB for a 4-bit memory showing a 100×improved signal to loss ratio compared to other phase-change-materials based photonic *** further optimize the positioning of dual microheaters validating performance *** we demonstrate a half-a-million cyclability test showcasing the robust approach of this material and ***-loss photonic retention-of-state adds a key feature for photonic functional and programmable circuits impacting many applications including neural networks,LiDAR,and sensors for example.

关键词： retention random eliminating

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Recent Advances in In-Memory Computing:Exploring Memristor and Memtransistor Arrays with 2D materials

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Nano-Micro Letters 2024年第7期16卷 1-30页

作者： Hangbo Zhou Sifan Li Kah-Wee Ang Yong-Wei Zhang Institute of High Performance Computing(IHPC) Agency for ScienceTechnology and Research(A*STAR)1 Fusionopolis Way#16-16 ConnexisSingapore 138632Republic of Singapore Department of Electrical and Computer Engineering National University of Singapore4 Engineering Drive 3Singapore 117583Republic of Singapore Institute of Materials Research and Engineering Agency for ScienceTechnology and Research(A*STAR)2 Fusionopolis WaySingapore 138634Republic of Singapore

The conventional computing architecture faces substantial chal-lenges,including high latency and energy consumption between memory and processing *** response,in-memory computing has emerged as a promising alternative architecture,enabling computing operations within memory arrays to overcome these *** devices have gained significant attention as key components for in-memory computing due to their high-density arrays,rapid response times,and ability to emulate biological *** these devices,two-dimensional(2D)material-based memristor and memtransistor arrays have emerged as particularly promising candidates for next-generation in-memory computing,thanks to their exceptional performance driven by the unique properties of 2D materials,such as layered structures,mechanical flexibility,and the capability to form *** review delves into the state-of-the-art research on 2D material-based memristive arrays,encompassing critical aspects such as material selection,device perfor-mance metrics,array structures,and potential ***,it provides a comprehensive overview of the current challenges and limitations associated with these arrays,along with potential *** primary objective of this review is to serve as a significant milestone in realizing next-generation in-memory computing utilizing 2D materials and bridge the gap from single-device characterization to array-level and system-level implementations of neuromorphic computing,leveraging the potential of 2D material-based memristive devices.

关键词： 2D materials Memristors Memtransistors Crossbar array In-memory computing

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Comprehensive analysis of two-dimensional charge transport mechanism in thin-film transistors based on random networks of single-wall carbon nanotubes using transient measurements

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Nano Research 2022年第2期15卷 1524-1531页

作者： Hyeonwoo Shin Sang-Joon Park Byeong-Cheol Kang Tae-Jun Ha Department of Electrical Engineering and Computer Science Inter-university Semiconductor Research CenterSeoul National UniversitySeoul 08826Korea Department of Electronic Materials Engineering Kwangwoon UniversitySeoul 01897Korea

Understanding charge transport mechanisms in thin-film transistors based on random networks of single-wall carbon nanotubes(SWCNT-TFTs)is essential for further advances to improve the potential for various nanoelectronic ***,a comprehensive investigation of the two-dimensional(2D)charge transport mechanism in SWCNT-TFTs is reported by analyzing the temperature-dependent electrical characteristics determined from the direct-current and non-quasi-static transient measurements at 80-300 *** elucidate the time-domain charge transport characteristics of the random networks in the SWCNTs,an empirical equation was derived from a theoretical trapping model,and a carrier velocity distribution was determined from the differentiation of the transient ***,charge trapping and de-trapping in shallow-and deep-traps in SWCNT-TFTs were analyzed by investigating charge transport based on their trapping/de-trapping *** comprehensive analysis of this study provides fundamental insights into the 2D charge transport mechanism in TFTs based on random networks of nanomaterial channels.

关键词： single-wall carbon nanotube random networks two-dimensional(2D)charge transport time-domain transient measurements charge trapping/de-trapping shallow-/deep-traps

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Soft Artificial Synapse Electronics

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Research 2024年第4期2025卷 101-118页

作者： Md.Rayid Hasan Mojumder Seongchan Kim Cunjiang Yu Department of Electrical Engineering The Pennsylvania State UniversityUniversity ParkPA 16802USA Department of Electrical and Systems Engineering University of PennsylvaniaPhiladelphiaPA 19104USA Department of Electrical and Computer Engineering University of IllinoisUrbana-ChampaignUrbanaIL 61801USA Department of Materials Science and Engineering University of IllinoisUrbana-ChampaignUrbanaIL 61801USA Department of Mechanical Science and Engineering University of IllinoisUrbana-ChampaignUrbanaIL 61801USA Department of Bioengineering University of IllinoisUrbana-ChampaignUrbanaIL 61801USA Materials Research Laboratory University of IllinoisUrbana-ChampaignUrbanaIL 61801USA Beckman Institute for Advanced Science and Technology University of IllinoisUrbana-ChampaignUrbanaIL 61801USA Nick Holonyak Micro and Nanotechnology Laboratory University of IllinoisUrbana-ChampaignUrbanaIL 61801USA

Soft electronics,known for their bendable,stretchable,and flexible properties,are revolutionizing fields such as biomedical sensing,consumer electronics,and robotics.A primary challenge in this domain is achieving low power consumption,often hampered by the limitations of the conventional von Neumann *** response,the development of soft artificial synapses(SASs)has gained substantial *** synapses seek to replicate the signal transmission properties of biological synapses,offering an innovative solution to this *** review explores the materials and device architectures integral to SAS fabrication,emphasizing flexibility and stability under mechanical *** architectures,including floating-gate dielectric,ferroelectric-gate dielectric,and electrolyte-gate dielectric,are analyzed for effective weight control in *** utilization of organic and low-dimensional materials is highlighted,showcasing their plasticity and energy-efficient ***,the paper investigates the integration of functionality into SASs,particularly focusing on devices that autonomously sense external *** SASs,capable of recognizing optical,mechanical,chemical,olfactory,and auditory cues,demonstrate promising applications in computing and sensing.A detailed examination of photo-functionalized,tactile-functionalized,and chemoreception-functionalized SASs reveals their potential in image recognition,tactile sensing,and chemosensory applications,*** study highlights that SASs and functionalized SAS devices hold transformative potential for bioelectronics and sensing for soft-robotics applications;however,further research is necessary to address scalability,longtime stability,and utilizing functionalized SASs for prosthetics and in vivo applications through clinical *** providing a comprehensive overview,this paper contributes to the understanding of SASs,bridging research gaps and paving the way tow

关键词： dielectric utilizing gained

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Metasurfaces for next-generation wireless communication systems

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National science Review 2023年第8期10卷 17-19页

作者： Younes Ra'di Nikita Nefedkin Petar Popovski Andrea Alù Department of Electrical Engineering and Computer Science Syracuse University Photonics Initiative Advanced Science Research Center City University of New York Department of Electronic Systems Aalborg University Physics Program Graduate Center City University of New York

The pace of development in the world of 5G communication systems has proven to be much more demanding than previous generations, with 5G-Advanced seemingly around the corner [1]. Extensive research is already underway to structure the next generation of wireless systems(i.e. 6G), which may potentially enable an unprecedented level of human–machine interaction [2].

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TrueAdaptTM- AI Based Maskless Patterning to Compensate for Die-Shift in Fan-Out Wafer Level Packaging 73

TrueAdaptTM- AI Based Maskless Patterning to Compensate for ...

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73rd IEEE Electronic Components and Technology Conference, ECTC 2023

作者： Sabbir, Golam Sahoo, Krutikesh Sun, Henry Iver, Subramanian Ouyang, Guangqi Wu, Yilin Ucla Department of Materials Science and Engineering United States Ucla Department of Electrical and Computing Engineering United States Ucla Department of Computer Science United States

ISBN: (纸本)9798350334982

TrueAdapt™ offers an attractive solution to fan-out-wafer-level-packaging (FOWLP) and fan-out-panel-level-packaging, which offers significant cost savings as compared to similar bridge connection technology or interposers. Due to die-placement error and shift during molding, die assemblies on FOWLP can have significant die-shift. Design rules must ensure the accommodation of die-shift and as a result fine-pitch patterning is limited. TrueAdapt™ aims to solve that by utilizing in-line characterization of the die shift, generation of a new layout using the measured offsets, and patterning with direct-write lithography for high throughput wafer-level and panel-level fabrication at fine-pitches. In this work we present the fabrication of an assembly of dies interconnected in a daisy chain network with 10 µm pitch wiring on the FlexTrate™, a bio-compatible polydimethylsiloxane (PDMS) based FOWLP architecture. We measure die shift using optical metrology techniques to generate a stitched image of the assembly. The image is then processed using artificial intelligence (AI) computer vision to identify critical features on the dies (which are used to generate die-offsets for each die). Furthermore, we generate a layout based on measured die-shift that adaptively routes the wiring in between dies. Via and metal layers are subsequently patterned using direct-write lithography using a 405 nm lase. Direct-write lithography enables fine-pitch patterning at the wafer/panel level without the need for mask fabrication, promising significant cost savings. We further demonstrate a novel exposure technique based on focal extension that can be utilized to pattern over 100 µm of topography, making this a truly adaptive patterning process. © 2023 IEEE.

关键词： Dies

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Enhanced Bottom Anode Monitoring in DC Electric Arc Furnaces Using Fiber-Optic Sensors

Enhanced Bottom Anode Monitoring in DC Electric Arc Furnaces...

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AISTech 2024 Iron and Steel Technology Conference

作者： Mekala, Yeshwanth Reddy Inalegwu, Ogbole C. Saha, Rony Kumer Mumtaz, Farhan Gerald, Rex E. Smith, Jeffrey D. Huang, Jie O’Malley, Ronald J. Department of Materials Science and Engineering Missouri University of Science and Technology RollaMO65409 United States Department of Electrical and Computer Engineering Missouri University of Science and Technology RollaMO65409 United States

ISBN: (纸本)9780930767259

A pin style bottom anode employs conductive steel rods that serve as the pathway for the high electrical power through rammed refractory at the bottom of a DC Electric Arc Furnace (EAF). Anode wear during operation is important to monitor, as anode replacement is expensive and impacts EAF productivity. Liquid steel penetration into the un-sintered refractory layer can result from rapid electrical power ramp-up, dips in furnace temperature, or operating the anode for too long between EAF campaigns. In extreme cases, the liquid steel may penetrate the bottom of the furnace when anode wear progresses too close to the bottom shell, which is extremely dangerous and must be avoided. The current state of the art for monitoring bottom anode wear employs thermocouples imbedded in the anode pins at points in the anode. However, this approach is not sensitive enough to detect localized damage to the anode, especially when cracking occurs. The present work utilizes fiber optic sensors to monitor the health of the anode, by creating a real-time spatially distributed temperature map of the anode. Unlike the traditional thermocouples, these sensors can be mounted at significantly greater depths, provide distributed temperature measurements, and can withstand temperatures of up to 900°C. Additionally, they are able to perform temperature measurements with a spatial resolution of 1.3 mm at a 5 Hz acquisition rate, providing unprecedented high-density real time monitoring of anode health and increasing the efficiency, and safety of EAF operation. © 2024 by the Association for Iron & Steel Technology.

关键词： Fiber optic sensors

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Improved Monitoring of the Water-Cooled Upper Shell of an Electric Arc Furnace Using Fiber-Optic Sensors

Improved Monitoring of the Water-Cooled Upper Shell of an El...

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AISTech 2024 Iron and Steel Technology Conference

作者： Mekala, Yeshwanth Reddy Saha, Rony Kumer Inalegwu, Ogbole C. Roman, Muhammad Mumtaz, Farhan Gerald, Rex E. Smith, Jeffrey D. Huang, Jie O’Malley, Ronald J. Department of Materials Science and Engineering Missouri University of Science and Technology RollaMO65409 United States Department of Electrical and Computer Engineering Missouri University of Science and Technology RollaMO65409 United States

ISBN: (纸本)9780930767259

Modern Electric Arc Furnaces (EAF) employ ultra-high-power electrical input to minimize the scrap melting time. Increasing the operating voltage increases arc length and enhances the active power, but radiation energy losses also increase if the arc is exposed to the furnace, resulting in a drop in thermal efficiency and causing hot spots in the furnace. The present work introduces a novel approach using fiber optic sensors to create a real-time, spatially distributed thermal map of the EAF's water-cooled upper shell, which can be helpful in detecting operational anomalies and improving EAF energy efficiency. Lab-scale testing using fiber-optic sensors on a spray-cooled steel plate achieved a remarkable spatial resolution of 2.3mm and a 1Hz data acquisition rate, paving the way for industrial-scale implementation. These sensors, providing reliable spatial temperature measurements, offer early detection of sidewall hot spots and precise adjustments to voltage and burner positioning based on granular data from the scrap melting stages. This study strongly advocates the use of fiber optic sensors in EAFs, would enhance efficiency and safety in steelmaking. © 2024 by the Association for Iron & Steel Technology.

关键词： Fiber optic sensors

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Into 3D-Reconstructed Apparel over Virtual Try-On with Virtual Reality

Into 3D-Reconstructed Apparel over Virtual Try-On with Virtu...

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2023 International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023

作者： Doungtap, Surasachai Petchhan, Jirayu Phanichraksaphong, Varinya Wang, Jenq-Haur International Graduate Program of Electrical Engineering and Computer Science Taiwan National Taiwan University of Science & Technology Dept. of Electrical Engineering Taiwan National Taipei University of Technology Department of Computer Science and Information Engineering Taiwan

ISBN: (纸本)9798350324174

Virtualization technologies are still growing bigger and faster. Despite the greatness of its advancement, the costume industry is still very accessible when it comes to real trials. Off-the-shelf stuff are inadequate details for the desired individual to assess its in-depth utility for each garment trying on for a second, including custom stuff are much harder to try out right away. To this end, 2D image-based 3D reconstruction inclusive of touchable-virtualized space is accessible easier to stuff details for mans' decision making in purchasing. We establish the overall end-to-end pipeline from reconstruction until visualization for one instance to be triable on its stuff for a moment. As an expectation, our proposed approach can bring objects into the experimental area and use them immediately without any obstacle. © 2023 IEEE.

关键词： Virtual reality

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La-substituted W-type barium-nickel ferrites for tunable and high-performance electromagnetic wave absorption

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International Journal of Minerals,Metallurgy and materials 2025年第3期32卷 645-656页

作者： Long Wang Jiurong Liu Shenghui Xie Yanli Deng Zhou Wang Shanyue Hou Shengying Yue Gang Wang Na Wu Zhihui Zeng Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials(Ministry of Education) School of Materials Science and EngineeringShandong UniversityJinan 250061China Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education and International Center for Dielectric ResearchSchool of Electronic Science and EngineeringXi’an Jiaotong UniversityXi’an 710049China Army Engineering University of PLA College of Field Engineering Nanjing 210007China Laboratory for Multiscale Mechanics and Medical Science State Key Laboratory for Strength and Vibration of Mechanical StructuresSchool of AerospaceXi’an Jiaotong UniversityXi’an 710049China Department of Electrical and Computer Engineering Beckman Institute for Advanced Science and TechnologyUniversity of Illinois at Urbana-ChampaignUrbana 61801USA School of Chemistry and Chemical Engineering Shandong UniversityJinan 250100China

W-type barium-nickel ferrite(BaNi_(2)Fe_(16)O_(27))is a highly promising material for electromagnetic wave(EMW)absorption be-cause of its magnetic loss capability for EMW,low cost,large-scale production potential,high-temperature resistance,and excellent chemical ***,the poor dielectric loss of magnetic ferrites hampers their utilization,hindering enhancement in their EMW-absorption *** efficient strategies that improve the EMW-absorption performance of ferrite is highly desired but re-mains ***,an efficient strategy substituting Ba^(2+)with rare earth La^(3+)in W-type ferrite was proposed for the preparation of novel La-substituted ferrites(Ba_(1-x)LaxNi_(2)Fe_(15.4)O_(27)).The influences of La^(3+)substitution on ferrites’EMW-absorption performance and the dissipative mechanism toward EMW were systematically explored and ***^(3+)efficiently induced lattice defects,enhanced defect-induced polarization,and slightly reduced the ferrites’bandgap,enhancing the dielectric properties of the ***^(3+)also enhanced the ferromagnetic resonance loss and strengthened magnetic *** effects considerably improved the EMW-absorption perform-ance of Ba_(1-x)LaxNi_(2)Fe_(15.4)O_(27)compared with pure W-type *** x=0.2,the best EMW-absorption performance was achieved with a minimum reflection loss of-55.6 dB and effective absorption bandwidth(EAB)of 3.44 GHz.

关键词： electromagnetic wave absorption W-type barium ferrite rare earth dielectric

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