We report a near-infrared to visible-light optical upconverter by the integration of an i-In0.53Ga0.47As/C60 junction and organic light emitting diode. This device shows the photovoltaic effect of i-In0.53Ga0.47As/C60...
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Nanoscale actuators are required for the development of nanorobots and other nanoelectromechanical systems (NEMS) of the future. Actuators based on electrochemically-induced volumetric changes in electroactive polymer...
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Hexagonal boron nitride (hBN) has been grown on sapphire substrates by ultrahigh-temperature molecular beam epitaxy (MBE). A wide range of substrate temperatures and boron fluxes have been explored, revealing that hig...
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The relationship between the optical properties and microstructure of GaN is of great interest due to the important optical and electronic applications of this material. Several different studies have been reported at...
The relationship between the optical properties and microstructure of GaN is of great interest due to the important optical and electronic applications of this material. Several different studies have been reported attempting to link the low temperature photoluminescence (PL) peak at ∼3.4 eV to the presence of various microstructural defects. However, no clear systematic studies have been reported establishing such a link for the PL peak observed at ∼3.2 eV. In this paper, we present evidence linking the ∼3.4 eV PL peak to the presence of a thin layer of cubic phase associated with basal plane stacking faults (BSF). This relationship is mainly established by studying a series of ammonothermally-grown GaN bulk crystals. The existence and strength of the ∼3.4 eV peak are found to be related to the I2 type BSF (RI2=1/3<1>) observed in these samples. To investigate the relationship between the ∼3.2 eV peak and structural defects, a series of GaN epilayers grown on either SiC or sapphire (of various off-cut angles) was investigated by TEM and PL spectroscopy. Samples grown on 3.5° off-cut SiC and 5° and 9° off-cut sapphire substrates exhibit PL peaks near ∼3.2 and ∼3.4 eV, which are absent in the on-axis SiC and sapphire cases. TEM shows that the former group of samples has defect configurations consisting of prismatic stacking faults (PSFs) folding back and forth between two different {1120} planes connected by stair rod dislocations, which in turn fold onto to I1 type BSFs again with stair rod dislocations at the fault intersections. The ∼3.2 eV PL peaks are proposed to possibly arise from transitions involving the PSFs and the stair rods associated with their mutual intersections and their intersections with the BSFs. The ∼3.4 eV peak is again attributed to the thin layer of cubic phase associated with the I1 type BSF (three bilayers as opposed to four bilayers for the I2 type BSF).
We report an organic/inorganic hybrid optical amplifier with a function of converting infrared light to visible light. This device integrates an InGaAs/InP heterojunction phototransistor (HPT) and an organic light emi...
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We fabricated a full-dielectric three-dimensional photonic-crystal cavity containing an ultrahigh-mobility two-dimensional electron gas. By applying a strong perpendicular magnetic field, we created Landau polaritons ...
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Experimental grain growth observations often deviate from grain growth simulations, revealing that the governing rules for grain boundary motion are not fully understood. A novel deep learning model was developed to c...
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Semantic similarity measure plays an essential role in Information Retrieval and Natural Language Processing. In this paper we propose a page-count-based semantic similarity measure and apply it in biomedical domains....
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Semantic similarity measure plays an essential role in Information Retrieval and Natural Language Processing. In this paper we propose a page-count-based semantic similarity measure and apply it in biomedical domains. Previous researches in semantic web related applications have deployed various semantic similarity measures. Despite the usefulness of the measurements in those applications, measuring semantic similarity between two terms remains a challenge task. The proposed method exploits page counts returned by the Web Search Engine. We define various similarity scores for two given terms P and Q, using the page counts for querying P, Q and P AND Q. Moreover, we propose a novel approach to compute semantic similarity using lexico-syntactic patterns with page counts. These different similarity scores are integrated adapting support vector machines, to leverage the robustness of semantic similarity measures. Experimental results on two datasets achieve correlation coefficients of 0.798 on the dataset provided by A. Hliaoutakis, 0.705 on the dataset provide by T. Pedersen with physician scores and 0.496 on the dataset provided by T. Pedersen et al. with expert scores.
Gd 5 (Si x Ge 1-x ) 4 compounds undergo first order phase transitions close to room temperature when x @ 0.5, which are accompanied by extreme changes of properties. We report the fabrication of nanoparticles of one ...
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Gd 5 (Si x Ge 1-x ) 4 compounds undergo first order phase transitions close to room temperature when x @ 0.5, which are accompanied by extreme changes of properties. We report the fabrication of nanoparticles of one of the parent compounds - Gd 5 Si 4 - using high energy ball milling. Crystal structure, microstructure and magnetic properties have been investigated. Particles agglomerate at long milling times and the particles that are milled longer than 20 min lose crystallinity and no longer undergo magnetic phase transition close to 340 K, which is present in a bulk material. Samples milled for more than 20 min exhibit a slightly increased coercivity.
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