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Low-profile,low sidelobe array antenna with ultrawide beam coverage for UAV communication

Chinese Journal of Aeronautics 2025年第1期38卷 444-454页

作者： Mei LI Zhiliang SHANG Lin PU Ming-Chun TANG Lei ZHU School of Microelectronics and Communication Engineering Chongqing UniversityChongqing 400044China Department of Electrical and Computer Engineering University of MacaoMacao SAR 999078China

This paper presents a design method to implement an antenna array characterized by ultra-wide beam coverage,low profile,and low Sidelobe Level(SLL)for the application of Unmanned Aerial Vehicle(UAV)air-to-ground *** array consists of ten broadside-radiating,ultrawide-beamwidth elements that are cascaded by a central-symmetry series-fed network with tapered currents following Dolph-Chebyshev distribution to provide low ***,an innovative design of end-fire Huygens source antenna that is compatible with metal ground is presented.A low-profile,half-mode Microstrip Patch Antenna(MPA)is utilized to serve as the magnetic dipole and a monopole is utilized to serves as the electric dipole,constructing the compact,end-fire,grounded Huygens source ***,two opposite-oriented end-fire Huygens source antennas are seamlessly integrated into a single antenna element in the form of monopole-loaded MPA to accomplish the ultrawide,broadside-radiating *** consideration has been applied into the design of series-fed network as well as antenna element to compensate the adverse coupling effects between elements on the radiation *** indicates an ultrawide Half-Power Beamwidth(HPBW)of 161°and a low SLL of-25 dB with a high gain of 12 d Bi under a single-layer *** concurrent ultrawide beamwidth and low SLL make it particularly attractive for applications of UAV air-to-ground communication.

关键词： Array antenna Broad beam Fan beam Low sidelobe level Chebyshev synthesis UAV communication

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Comparison and integration of CuInGaSe and perovskite solar cells

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Journal of Energy Chemistry 2023年第3期78卷 463-475,I0013页

作者： Weiguang Chi Sanjay K.Banerjee Microelectronics Research Center Department of Electrical and Computer EngineeringThe University of Texas at AustinAustinTexas 78758USA

The rapidly developing perovskite solar cells(PSCs) provide a new and promising choice of thin film solar cells due to their attractive *** the commercialized thin film solar cells,CuInGaSe(CIGS)cells demonstrate higher efficiency than amorphous Si photovoltaic devices and lower toxicity than CdTe ***,a wide variety of studies have been conducted on ***,we elucidate CIGS materials and perovskites as absorber in thin film solar cells in terms of structure and optoelectronic ***,a comparison of PSCs and commercialized CIGS cells is made from the point of view of fabrication process,stability,and *** addition,the integration of CIGS devices and PSCs is elaborated based on tandem ***,prospects for the advancement of CIGS cells and PSCs are discussed.

关键词： CuInGaSe solar cells Perovskite solar cells Process Stability Toxicity Tandem

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14-Bit SAR ADC with on-Chip Digital Bubble Sorting Calibration Technology

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Chinese Journal of Electronics 2025年第1期34卷 125-136页

作者： Hua Fan Zhuorui Chen Tongrui Xu Franco Maloberti Qi Wei Quanyuan Feng School of Integrated Circuit Science and Engineering(Exemplary School of Microelectronics) University of Electronic Science and Technology of China Shenzhen Institute for Advanced Study University of Electronic Science and Technology of China Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of China Department of Electrical Computer and Biomedical Engineering University of Pavia Department of Precision Instrument Tsinghua University Institute of Microelectronics Southwest Jiaotong University

This article designs a 14-bit successive approximation register analog-to-digital converter（SAR ADC）.A novel digital bubble sorting calibration method is proposed and applied to eliminate the effect of capacitor mismatch on the linearity of the SAR ADC. To reduce the number of capacitors, a hybrid architecture of a high 8-bit binary-weighted capacitor array and a low 6-bit resistor array is adopted by the digital-to-analog（DAC）. The common-mode voltage VCM-based switching scheme is chosen to reduce the switching energy and area of the DAC. The time-domain comparator is employed to obtain lower power consumption. Sampling is performed through a gate voltage bootstrapped switch to reduce the nonlinear errors introduced when sampling the input signal. Moreover, the SAR logic and the whole calibration is totally implemented on-chip through digital integrated circuit（IC） tools such as design compiler, IC compiler, etc. Finally, a prototype is designed and implemented using 0.18 μm bipolar-complementary metal oxide semiconductor（CMOS）-double-diffused MOS 1.8 V CMOS technology. The measurement results show that the SAR ADC with on-chip bubble sorting calibration method achieves the signal-to-noise-and-distortion ratio of 69.75 dB and the spurious-free dynamic range of 83.77 dB.

关键词： Semiconductor device measurement Capacitors Linearity Switches Calibration System-on-chip Frequency measurement Time-domain analysis Sorting Signal to noise ratio

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On-chip integrated GeSe_(2)/Si vdW heterojunction for ultravioletenhanced broadband photodetection,imaging,and secure optical communication

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Nano Research 2024年第7期17卷 6544-6549页

作者： Zhiman Zhou Kunxuan Liu Di Wu Yunrui Jiang Ranran Zhuo Pei Lin Zhifeng Shi Yongtao Tian Wei Han Longhui Zeng Xinjian Li School of Physics and Microelectronics Key Laboratory of Material Physics Ministry of EducationZhengzhou UniversityZhengzhou 450052China Department of Electrical and Computer Engineering University of California San DiegoLa JollaCalifornia 92093USA Institute of Microelectronics and Integrated Circuits School of MicroelectronicsHubei UniversityWuhan 430062China

Broadband photodetection,spanning from ultraviolet(UV)to infrared(IR),is pivotal in diverse technological domains including astronomy,remote sensing,environmental monitoring,and medical ***,current commercially available broadband photodetectors,predominately based on conventional narrow-bandgap semiconductors,exhibit limited sensitivity in the UV *** limitation,stemming from the significant energy disparity between the semiconductor bandgap and UV photon,narrows their application ***,we report an innovative approach involving the in-situ van der Waals(vdW)integration of two-dimensional(2D)GeSe_(2)layers onto a Si *** process yields a high-quality GeSe_(2)/Si vdW heterojunction device,which features a broad response range covering from UV to near-IR(NIR)with a greatly-enhanced sensitivity in the UV *** device possesses high responsivities of 325 and 533.4 mA/W,large detectivities of 1.24×10^(13)and 2.57×10^(13)Jones,and fast response speeds of 20.6/82.1 and 17.7/81.0μs under 360 and 980 nm,***,the broadband image sensing and secure invisible optical communication capabilities of the GeSe_(2)/Si heterojunction device are *** work provides a viable approach for UV-enhanced broadband photodetection technology,opening up new possibilities and applications across various scientific and technological domains.

关键词： germanium diselenide van der Waals(vdW)integration ultraviolet enhanced broadband photodetection imaging

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Cavity-agnostic acoustofluidic manipulations enabled by guided flexural waves on a membrane acoustic waveguide actuator

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Microsystems & Nanoengineering 2024年第2期10卷 153-171页

作者： Philippe Vachon Srinivas Merugu Jaibir Sharma Amit Lal Eldwin J.Ng Yul Koh Joshua E.-Y.Lee Chengkuo Lee Department of Electrical and Computer Engineering National University of SingaporeSingaporeSingapore Institute of Microelectronics Agency for ScienceTechnology and Research(A*STAR)SingaporeSingapore SonicMEMS Laboratory School of Electrical and Computer EngineeringCornell UniversityIthacaNYUSA School of Electrical and Data Engineering University of Technology SydneyUltimoNSWAustralia

This article presents an in-depth exploration of the acoustofluidic capabilities of guided flexural waves(GFWs)generated by a membrane acoustic waveguide actuator(MAWA).By harnessing the potential of GFWs,cavity-agnostic advanced particle manipulation functions are achieved,unlocking new avenues for microfluidic systems and lab-on-a-chip *** localized acoustofluidic effects of GFWs arising from the evanescent nature of the acoustic fields they induce inside a liquid medium are numerically investigated to highlight their unique and promising *** traditional acoustofluidic technologies,the GFWs propagating on the MAWA’s membrane waveguide allow for cavity-agnostic particle manipulation,irrespective of the resonant properties of the fluidic ***,the acoustofluidic functions enabled by the device depend on the flexural mode populating the active region of the membrane *** demonstrations using two types of particles include in-sessile-droplet particle transport,mixing,and spatial separation based on particle diameter,along with streaming-induced counter-flow virtual channel generation in microfluidic PDMS *** experiments emphasize the versatility and potential applications of the MAWA as a microfluidic platform targeted at lab-on-a-chip development and showcase the MAWA’s compatibility with existing microfluidic systems.

关键词： waveguide fluid cavity

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Modified SPICE-Compatible Model Integrating NBTI and Self-Heating Effects for VDMOS Transistors 11

Modified SPICE-Compatible Model Integrating NBTI and Self-He...

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11th International Conference on Electrical, Electronic and Computing engineering, IcETRAN 2024

作者： Marjanović, Milos Veljković, Sandra Mitrović, Nikola Živanović, Emilija Gavrić, Aleksandar Danković, Danijel Faculty of Electronic Engineering Department of Microelectronics Niš Serbia Faculty of Electronic Engineering Department of Computer Science Niš Serbia

ISBN: (纸本)9798350386998

This paper describes a modified SPICE-compatible VDMOS transistor model that includes NBT and self-heating effects. A complete circuit diagram of the transistor is given, which includes the electrical part of the circuit that models the NBT effect and the equivalent thermal part of the circuit that models the self-heating effect. The parameters of the model were determined based on the technical documentation and the fitting method based on the performed experiments. Fresh transistors and NBT-stressed transistors, with and without a heatsink in the load-driving circuit, were considered. The results of experiments and simulations correspond to each other with a maximum deviation of up to 10%. The proposed model can be used in the design and analysis of transistor reliability parameters. © 2024 IEEE.

关键词： SPICE

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Large circuit models: opportunities and challenges

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Science China(Information Sciences) 2024年第10期67卷 25-66页

作者： Lei CHEN Yiqi CHEN Zhufei CHU Wenji FANG Tsung-Yi HO Ru HUANG Yu HUANG Sadaf KHAN Min LI Xingquan LI Yu LI Yun LIANG Jinwei LIU Yi LIU Yibo LIN Guojie LUO Hongyang PAN Zhengyuan SHI Guangyu SUN Dimitrios TSARAS Runsheng WANG Ziyi WANG Xinming WEI Zhiyao XIE Qiang XU Chenhao XUE Junchi YAN Jun YANG Bei YU Mingxuan YUAN Evangeline F.Y.YOUNG Xuan ZENG Haoyi ZHANG Zuodong ZHANG Yuxiang ZHAO Hui-Ling ZHEN Ziyang ZHENG Binwu ZHU Keren ZHU Sunan ZOU Huawei Noah’s Ark Lab School of Integrated Circuits Peking University Faculty of Electrical Engineering and Computer Science Ningbo University Department of Electronic and Computer Engineering Hong Kong University of Science and Technology Department of Computer Science and Engineering The Chinese University of Hong Kong School of Integrated Circuits Southeast University Huawei HiSilicon Peng Cheng Laboratory School of Computer Science Peking University School of Microelectronics State Key Laboratory of Integrated Chips and System Fudan University School of Artificial Intelligence Shanghai Jiao Tong University

Within the electronic design automation(EDA) domain, artificial intelligence(AI)-driven solutions have emerged as formidable tools, yet they typically augment rather than redefine existing methodologies. These solutions often repurpose deep learning models from other domains, such as vision, text, and graph analytics, applying them to circuit design without tailoring to the unique complexities of electronic circuits. Such an “AI4EDA” approach falls short of achieving a holistic design synthesis and understanding,overlooking the intricate interplay of electrical, logical, and physical facets of circuit data. This study argues for a paradigm shift from AI4EDA towards AI-rooted EDA from the ground up, integrating AI at the core of the design process. Pivotal to this vision is the development of a multimodal circuit representation learning technique, poised to provide a comprehensive understanding by harmonizing and extracting insights from varied data sources, such as functional specifications, register-transfer level(RTL) designs, circuit netlists,and physical layouts. We champion the creation of large circuit models(LCMs) that are inherently multimodal, crafted to decode and express the rich semantics and structures of circuit data, thus fostering more resilient, efficient, and inventive design methodologies. Embracing this AI-rooted philosophy, we foresee a trajectory that transcends the current innovation plateau in EDA, igniting a profound “shift-left” in electronic design methodology. The envisioned advancements herald not just an evolution of existing EDA tools but a revolution, giving rise to novel instruments of design-tools that promise to radically enhance design productivity and inaugurate a new epoch where the optimization of circuit performance, power, and area(PPA) is achieved not incrementally, but through leaps that redefine the benchmarks of electronic systems' capabilities.

关键词： AI-rooted EDA large circuit models (LCMs) multimodal circuit representation learning circuit optimization

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A Neuromorphic Spiking Neural Network Using Time-to-First-Spike Coding Scheme and Analog Computing in Low-Leakage 8T SRAM

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IEEE Transactions on Very Large Scale Integration (VLSI) Systems 2024年第5期32卷 848-859页

作者： Chen, Chao-Yu Dai, Yan-Siou Hong, Hao-Chiao Institute of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Novatech Microelectronics Corporation Technology Innovation Department Hsinchu300092 Taiwan

This article demonstrates the first functional neuromorphic spiking neural network (SNN) that processes the time-to-first-spike (TTFS) encoded analog spiking signals with the second-order leaky integrate-and-fire (SOLIF) neuron model to achieve superior biological plausibility. An 8-kb SRAM macro is used to implement the synapses of the neurons to enable analog computing in memory (ACIM) operation and produce current-type dendrite signals of the neurons. A novel low-leakage 8T (LL8T) SRAM cell is proposed for implementing the SRAM macro to reduce the read leakage currents on the read bitlines (RBLs) when performing ACIM. Each neuron's soma is implemented with low-power analog circuits to realize the SOLIF model for processing the dendrite signals and generating the final analog output spikes. No data converters are required in our design by virtue of analog computing's nature. A test chip implementing the complete output layer of the proposed SNN was fabricated in 90-nm CMOS. The active area is 553.4 118.6 {m}{2}. The measurement results show that our SNN implementation achieves an average inference latency of 196 ns and an inference accuracy of 81.4%. It consumes 242 {W} with an energy efficiency of 4.74 pJ/inference/neuron. © 1993-2012 IEEE.

关键词： Neural networks

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A Comparative Analysis of the Junction Formation Mechanisms of the Boron on Silicon Junction 33

A Comparative Analysis of the Junction Formation Mechanisms ...

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33rd International Scientific Conference Electronics, ET 2024

作者： Fang, Piet Nihtianov, Stoyan TU Delft Faculty of Electrical Engineering Mathematics and Computer Science Department of Microelectronics Mekelweg 4 Delft Netherlands

ISBN: (纸本)9798350376449

Photodiodes based on the Boron on Silicon junction (B-Si) show excellent responsivity to DUV and VUV photons, radiation hardness, and impressive electrical characteristics. However, the proposed models describing the junction formation mechanism do not sufficiently predict the junction's properties. We analyze two previously proposed models: the ultra-shallow p-n junction model and the charge transfer heterojunction model. We additionally apply the Schottky-Mott theory, a semiconductor-metal heterojunction model. Both the commonalities and incompatibilities between these models are discussed. © 2024 IEEE.

关键词： Heterojunctions

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Constructing Rectilinear Steiner Minimum Tree with Conditional Generative Adversarial Network 38

Constructing Rectilinear Steiner Minimum Tree with Condition...

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38th International Conference on VLSI Design, VLSID 2025

作者： Saha, Kritanta Banerjee, Pritha Sur-Kolay, Susmita Indian Statistical Institute Advanced Computing and Microelectronics Unit Kolkata India Sister Nivedita University Department of Computer Science and Engineering Kolkata India University of Calcutta Department of Computer Science and Engineering Kolkata India

ISBN: (纸本)9798331522445

Given n points in the 2D plane which are the pins of a net, a Rectilinear Steiner Minimum Tree (RSMT) which consists only of vertical and horizontal line segments is the shortest network to interconnect the pins along with a few extra (Steiner) points. An RSMT for a net has a minimum total wirelength in Manhattan distance and acts as a backbone to many state-of-the-art global routers. However, finding an RSMT is NPcomplete. In this work, we propose a method for constructing an RSMT with an image-to-image translation using a conditional generative adversarial network (cGAN) based model. Images of RSMTs with optimal wirelength for randomly generated nets form our training dataset. Experimental results show that, after training, our model generates RSMTs with = 0.348% wirelength error on average compared with the optimal solution for nets with degrees up to 50. This is the first successful attempt to solve the RSMT construction problem as an image-to-image translation problem using a cGAN based model. © 2025 IEEE.

关键词： Generative adversarial networks

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